Molecular frame photoemission is a very sensitive probe of the photoionization (PI) dynamics of molecules. This paper reports a comparative study of non-resonant and resonant photoionization of D2 induced by VUV cir...Molecular frame photoemission is a very sensitive probe of the photoionization (PI) dynamics of molecules. This paper reports a comparative study of non-resonant and resonant photoionization of D2 induced by VUV circularly polarized synchrotron radiation at SOLEIL at the level of the molecular frame photoelectron angular distributions (MFPADs). We use the vector correlation method which combines imaging and time-of-flight resolved electron-ion coincidence techniques, and a generalized formalism for the expression of the Ⅰ(χ, θe, Фe) MFPADs, where χ is the orientation of the molecular axis with respect to the light quantization axis and (θe, Фe) the electron emission direction in the molecular frame. Selected MFPADs for a molecule aligned parallel or perpendicular to linearly polarized light, or perpendicular to the propagation axis of circularly polarized light, are presented for dissociative photoionization (DPI) of D2 at two photon excitation energies, hv=19 eV, where direct PI is the only channel opened, and hv=32.5 eV, i.e. in the region involving resonant excitation of Q1 and Q2 doubly excited state series. We discuss in particular the properties of the circular dichroism characterizing photoemission in the molecular frame for direct and resonant PI. In the latter case, a remarkable behavior is observed which may be attributed to the interference occurring between undistinguishable autoionization decay channels.展开更多
The growth mode of 3,4,9,10-perylenetetra-carboxylic dianhydride(PTCDA) deposited on p-Si substrates can be deduced by X-ray Photoemission Spectroscopy(XPS). The spectrum and fine spectrum at the surface of specimen a...The growth mode of 3,4,9,10-perylenetetra-carboxylic dianhydride(PTCDA) deposited on p-Si substrates can be deduced by X-ray Photoemission Spectroscopy(XPS). The spectrum and fine spectrum at the surface of specimen are studied. Firstly, PTCDA molecules assemble at the defects to form lots of three-dimensional island-like PTCDA crystal nucleuses, and then by the action of delocalized big π bond, two adjacent layers of PTCDA molecules overlap to some extent and finally island-like structure forms. PTCDA molecules of benzene ring combine with Si atoms at the defects, and that of acid anhydride radicals combine with Si atoms at the perfect fraction of the surface. In the course of combination, although the structure of benzene ring doesn't change, the chemical reaction of acid anhydride radicals and Si occurs to break off C=O bond in acid anhydride, and then C-Si-O and silicon oxide might be produced.展开更多
Metal halide perovskite light emitting diodes(PeLEDs)have recently experienced rapid development due to the tunable emission wavelengths,narrow emission linewidth and low material cost.To achieve stateof-the-art perfo...Metal halide perovskite light emitting diodes(PeLEDs)have recently experienced rapid development due to the tunable emission wavelengths,narrow emission linewidth and low material cost.To achieve stateof-the-art performance,the high photoluminescence quantum yield(PLQY)of the active emission layer,the balanced charge injection,and the optimized optical extraction should be considered simultaneously.Multiple chemical passivation strategies have been provided as controllable and efficient methods to improve the PLQY of the perovskite layer.However,high luminance under large injection current and high external quantum efficiency(EQE)can hardly be achieved due to Auger recombination at high carrier density.Here,we decreased the electron injection barrier by tuning the Fermi-level of the perovskite,leading to a reduced turn on voltage.Through molecular doping of the hole injection material,a more balanced hole injection was achieved.At last,a device with modified charge injection realizes high luminance and quantum efficiency simultaneously.The best device exhibits luminance of 55,000 cd m^-2 EQE of 8.02%at the working voltage of 2.65 V,current density of 115 mA cm^-2,and shows EQE T50 stability around 160 min at 100 mA cm^-2 injection current density.展开更多
文摘Molecular frame photoemission is a very sensitive probe of the photoionization (PI) dynamics of molecules. This paper reports a comparative study of non-resonant and resonant photoionization of D2 induced by VUV circularly polarized synchrotron radiation at SOLEIL at the level of the molecular frame photoelectron angular distributions (MFPADs). We use the vector correlation method which combines imaging and time-of-flight resolved electron-ion coincidence techniques, and a generalized formalism for the expression of the Ⅰ(χ, θe, Фe) MFPADs, where χ is the orientation of the molecular axis with respect to the light quantization axis and (θe, Фe) the electron emission direction in the molecular frame. Selected MFPADs for a molecule aligned parallel or perpendicular to linearly polarized light, or perpendicular to the propagation axis of circularly polarized light, are presented for dissociative photoionization (DPI) of D2 at two photon excitation energies, hv=19 eV, where direct PI is the only channel opened, and hv=32.5 eV, i.e. in the region involving resonant excitation of Q1 and Q2 doubly excited state series. We discuss in particular the properties of the circular dichroism characterizing photoemission in the molecular frame for direct and resonant PI. In the latter case, a remarkable behavior is observed which may be attributed to the interference occurring between undistinguishable autoionization decay channels.
文摘The growth mode of 3,4,9,10-perylenetetra-carboxylic dianhydride(PTCDA) deposited on p-Si substrates can be deduced by X-ray Photoemission Spectroscopy(XPS). The spectrum and fine spectrum at the surface of specimen are studied. Firstly, PTCDA molecules assemble at the defects to form lots of three-dimensional island-like PTCDA crystal nucleuses, and then by the action of delocalized big π bond, two adjacent layers of PTCDA molecules overlap to some extent and finally island-like structure forms. PTCDA molecules of benzene ring combine with Si atoms at the defects, and that of acid anhydride radicals combine with Si atoms at the perfect fraction of the surface. In the course of combination, although the structure of benzene ring doesn't change, the chemical reaction of acid anhydride radicals and Si occurs to break off C=O bond in acid anhydride, and then C-Si-O and silicon oxide might be produced.
基金in part supported by Research Grants Council of Hong Kong,particularly,via Grant Nos.Ao E/P-03/08,T23-407/13-N,Ao E/P-02/12,14207515,14204616CUHK Group Research Scheme,and ITS/088/17 by Innovation and Technology Commission,Hong Kong SAR Governmentthe National Natural Science Foundation of China for the support,particularly,via Grant No.61229401。
文摘Metal halide perovskite light emitting diodes(PeLEDs)have recently experienced rapid development due to the tunable emission wavelengths,narrow emission linewidth and low material cost.To achieve stateof-the-art performance,the high photoluminescence quantum yield(PLQY)of the active emission layer,the balanced charge injection,and the optimized optical extraction should be considered simultaneously.Multiple chemical passivation strategies have been provided as controllable and efficient methods to improve the PLQY of the perovskite layer.However,high luminance under large injection current and high external quantum efficiency(EQE)can hardly be achieved due to Auger recombination at high carrier density.Here,we decreased the electron injection barrier by tuning the Fermi-level of the perovskite,leading to a reduced turn on voltage.Through molecular doping of the hole injection material,a more balanced hole injection was achieved.At last,a device with modified charge injection realizes high luminance and quantum efficiency simultaneously.The best device exhibits luminance of 55,000 cd m^-2 EQE of 8.02%at the working voltage of 2.65 V,current density of 115 mA cm^-2,and shows EQE T50 stability around 160 min at 100 mA cm^-2 injection current density.