论雅克·德里达的解构主义理论

雅克·德里达的解构主义是西方后现代主义思潮的重要流派之一,对西方哲学、文化形成了很大的冲击,但是德里达的解构主义也存在很大的缺陷。主要表现在对"分延"缺乏正确的认识,夸大了"分延"的作用,忽视了"分延"的前提就是联系这一事实,以至于引申出荒谬的结论,其自身也很快被解构。只有正确认识"分延"以及"分延"与联系的关系,才能真正解构形而上学,同时又可避免哲学的崩溃。

Compressive performance of innovative reinforced pillars in closed/abandoned mines

Pillar is closely related to the stability and reliability of underground spaces in closed/abandoned mines.The present research introduced a new technique to strengthen square cement mortar columns via fiber-reinforced polymer(FRP)strips to verify the strengthening effect of FRP on pillars.Compared to a fully wrapped FRP jacket,the advantages of FRP strip are cost-effective and easy-to-construct.A series of compression tests as well as theoretical analysis were carried out to explore the mechanical behavior of square cement mortar specimens partially strengthened with FRP strips.The results verified the effectiveness of FRP strips in enhancing the stress and strain of cement mortar.Different from unconfined cement mortar specimens,these FRP-strengthened cement mortar specimens are featured with the double-peaked behaviors,mainly attributed to the stress state transformation from a one-dimensional to a three-dimensional stress state.It also indicated that the enhancement of stress increased with the FRP strip width.Moreover,the brittle-ductile transition ductile failure characteristics were also observed in FRP-confined cement mortar specimens.The ultimate ductility of the cement mortar specimen decreases gradually with the growth of the FRP strip width.The main contribution of this research is to enrich the strengthening techniques for residual pillars.

Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes

Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.

Gravity and magnetic anomalies field characteristics in the South China Sea and its application for interpretation of igneous rocks

Igneous rocks in the South China Sea have broad prospects for oil and gas exploration.Integrated geophysical methods are important approaches to study the distribution of igneous rocks and to determine and identify igneous rock bodies.Aimed at the characteristics of gravity and magnetic fields in the South China Sea,several potential field processing methods are preferentially selected.Reduction to the pole by variable inclinations in the area of low magnetic latitudes is used to perform reduction processing on magnetic anomalies.The preferential continuation method is used to separate gravity and magnetic anomalies and extract the gravity and magnetic anomaly information of igneous rocks in the shallow part of the South China Sea.The 3D spatial equivalent distribution of igneous rocks in South China Sea is illustrated by the 3 D correlation imaging of magnetic anomalies.Since the local anomaly boundaries are highlighted gravity and magnetic gradients,the distribution characters of different igneous rocks are roughly outlined by gravity and magnetic correlation analysis weighted by gradient.The results show the distribution of igneous rocks is controlled and influenced by deep crustal structure and faulting.

DIFFERENTIABILITY OF C_0-SEMIGROUPS WITH APPLICATION

This paper considers the differentiability of C 0 semigroups with respect to (w.r.t.) parameters contained in their infinitesimal generators.It is proved that the generalized continuity and strong differentiability of their infinitesimal generators w.r.t.parameters imply the differentiability of the C 0 semigroups.The results are applied to the differentiability of the solution of a linear delay differential equation w.r.t.its delays.

FLIGHT CLASSIFICATION MODEL BASED ON TRANSITIVE CLOSURE ALGORITHM AND APPLICATION TO FLIGHT SEQUENCING PROBLEM

A new arrival and departure flight classification method based on the transitive closure algorithm （TCA） is proposed. Firstly, the fuzzy set theory and the transitive closure algorithm are introduced. Then four different factors are selected to establish the flight classification model and a method is given to calculate the delay cost for each class. Finally, the proposed method is implemented in the sequencing problems of flights in a terminal area, and results are compared with that of the traditional classification method（TCM）. Results show that the new classification model is effective in reducing the expenses of flight delays, thus optimizing the sequences of arrival and departure flights, and improving the efficiency of air traffic control.

MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs

Some results on the molecular-beam epitaxial growth of HgCdTe focusing on the requirements of the 3rd generation infrared focal plane arrays are described. Good uniformity is observed over 75mm HgCdTe epilayers,and the deviation in cutoff wavelength is within 0. 1μm at 80K. A variety of surface defects are observed and the formation mechanism is discussed. The average density of surface defects in 75mm HgCdTe epiluyers is found to be less than 300cm^-2. It is found that the surface sticking coefficient of As during HgCdTe growth is very low and is sensitive to growth temperature, being only -1 × 10^-4 at 170℃. The activation energy of As in HgCdTe was determined to be 19.5meV,which decreases as （Na - Nd）^1/3 with a slope of 3.1 × 10^-5 meV · cm. The diffusion coefficients of As in HgCdTe of 1.0 ± 0,9 × 10^-16,8 ± 3 × 10^- is, and 1.5 ± 0.9 × 10^-13 cm^2/s are obtained at temperatures of 240,380, and 440℃, respectively under Hg-saturated pressure. The MBE-grown HgCdTe is incorporated into FPA fabrications,and the preliminary results are presented.

Highly-Strained InGaAs/GaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy

Highly stained InGaAs/GaAs Quantum Wells (QW) are grown by using molecular beam epitaxy.The room-temperature photoluminescence (PL) peak wavelength as long as 1160nm is obtained from QW with the In composition of 38% and the well width of 6 8nm.The full-width at half-maximum of the PL peak is 22meV,indicating a good quality.InGaAs/GaAs QW ridge-waveguide lasers with emission wavelength of 1120nm are demonstrated.For 100-μm-wide ridge-waveguide lasers with a cavity length of 800μm,the kink-free output power up to 200mW is achieved with the slope efficiency of 0 84mW/mA under the continue-wave operation.For 10μm-wide ridge-waveguide lasers,the lowest threshold current density of 450A/cm2 and the characteristic temperature of 90K are obtained.

On approximating multifractal traffic burstiness with Markov modulated Poisson processes

We investigate the approximating capability of Markov modulated Poisson processes (MMPP) for modeling multifractal Internet traffic. The choice of MMPP is motivated by its ability to capture the variability and correlation in moderate time scales while being analytically tractable. Important statistics of traffic burstiness are described and a customized moment-based fitting procedure of MMPP to traffic traces is presented. Our methodology of doing this is to examine whether the MMPP can be used to predict the performance of a queue to which MMPP sample paths and measured traffic traces are fed for comparison respectively, in addition to the goodness-of-fit test of MMPP. Numerical results and simulations show that the fitted MMPP can approximate multifractal traffic quite well, i.e. accurately predict the queueing performance.

InAs Wires on InP (001)

The heterostructure of InAs/In0.52Al0.48As/InP is unique in that InAs wires instead of dots self-assemble in molecular beam epitaxy. These InAs wires have some distinctive features in their growth and structure. This paper summarizes the investigations of the growth and structural properties of InAs wires that have been performed in our laboratory recently.

Optimization of InGaAs Quantum Dots for Optoelectronic Applications

Self-assembled In 0.35Ga 0.65As/GaAs quantum dots with low indium content are grown under different growth temperature and investigated using contact atomic force microscopy(AFM).In order to obtain high density and high uniformity of quantum dots,optimized conditions are concluded for MBE growth.Optimized growth conditions also compared with these of InAs/GaAs quantum dots.This will be very useful for InGaAs/GaAs QDs optoelectronic applications,such as quantum dots lasers and quantum dots infrared photodetectors.

Characterization of Ga NAs/ Ga As and Ga In NAs/ Ga As Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy: Effects of Ion Damage

The effects of ion damage on Ga NAs/Ga As and Ga In NAs/Ga As quantum wells ( QWs) grown by plas- ma- assisted molecular beam epitaxy have been investigated. Itis found thation damage is a key factor affecting the quality of Ga NAs and Ga In NAs QWs. Obvious appearance of pendello¨ sung fringes in X- ray diffraction pattern and remarkable im provement in the optical properties of the samples grown with ion removal magnets are observed.By removing nitrogen ions,the PL intensity of the Ga In NAs QW is improved so as to be comparable with that of Ga In As QW. The stronger is the magnetic field,the m ore obvious the PL intensity im provement would be.

MBE Growth of High Electron Mobility InP Epilayers

The molecular beam epitaxial growth of high quality epilayers on （100） InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio （2.0-7.0） and growth rate （0.437 and 0. 791μm/h）. Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate, P/In BEP ratio, cracker zone temperature, and growth temperature. The parameters have been optimized carefully via the results of Hall measurements. For a typical sample, 77K electron mobility of 4.57 × 10^4 cm^2/（V · s） and electron concentration of 1.55×10^15 cm^-3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃.

Research on service capacity of widened intersection based on traffic simulation

Delay analysis method is adopted to study the service capacity of a widened intersection. Traffic simulation software VISSIM is used for microscopic simulation of a widened intersection so as to obtain a delay curve. The delay-volume model of a widened intersection is established based on traffic simulation. The suggested value of basic service capacity of the widened left-turn lane is given along with how to determine correction factors and practical service capacity.

High-Responsivity ZnS Schottky Barrier Photodiode Array for Ultraviolet Imaging

A different approach,using the molecular beam epitaxy (MBE)-grown ZnS-based Schottky photodiode technology,is applied to fabricate an 8×8 photodiode array.The micro-processing procedures of this photodiode array including standard photolithography,a number of metallisation,wet-chemical etching and SiO_2 deposition for insulation are developed.The detector is characterized to have a cutoff wavelength at 340 nm and the photo-responsivity measurements on the pixels result an ultraviolet (UV) response as high as 0.15 A/W,corresponding to an external quantum efficiency of 55% in the visible-blind spectral ranging from 400 down to 250nm.Imaging tests indicate that this array is able to capture the intensity profile of a given UV light source with reasonably good capability.

Single Layer Growth of Strained Epitaxy at Low Temperature

Contacting mode atomic force microscopy (AFM) is used to measure the In 0.35 Ga 0.65 As/GaAs epilayer grown at low temperature (460℃).Unlike the normal layer by layer growth (FvdM mode) or self organized islands growth (SK mode),samples grown under 460℃ are found to be large islands with atomic thick terraces.AFM measurements reveale near one monolayer high steps.This kind of growth is good between FvdM and SK growth modes and can be used to understand the evolution of strained epitaxy from FvdM to SK mode.

Development of engineered cementitious composites with local ingredients

In order to reduce the cost of high performance polyvinyl alcohol（PVA） fiber reinforced cementitious material（called engineered cementitious composites,ECC）,a ductile ECC material is developed using domestic PVA fibers along with other local ingredients,such as fly ash,cement and sand.In addition to the economic analysis of ECC,the four-point bending test and the optical microscope are employed to investigate the deflection capacity of ECC,its crack width and the occurrence of the self-healing phenomenon.The experimental results suggest that ECC made with domestic ingredients exhibits larger deformability and the average crack width is controlled around 60 μm.Furthermore,the self-healing behavior is observed in cracks of the specimens after cycles of wet and dry curing.The economic analysis shows that the cost of ECC can be greatly reduced via employing domestic PVA fibers.It is,therefore,feasible to produce low cost ECC material employing domestic PVA fibers,while simultaneously retaining high material ductility.

A Novel ADC Architecture for Digital Voltage Regulator Module Controllers

The design and implementation of a novel ADC architecture called ring-ADC for digital voltage regulator module controllers are presented. Based on the principle of voltage-controlled oscillators＇ transform from voltage to frequency,the A/D conversion of ring-ADC achieves good linearity and precise calibration against process variations compared with the delay-line ADC. A differential pulse counting discriminator also helps decrease the power consumption of the ring-ADC. It is fabricated with a Chartered 0.35μm CMOS process, and the measurement results of the integral and differential nonlinearity performance are 0.92LSB and 1.2LSB respectively. The maximum gain error measured in ten sample chips is ± 3.85%. With sampling rate of 500kHz and when the voltage regulator module （VRM） works in steady state, the ring-ADC＇s average power consumption is 2.56mW. The ring-ADC is verified to meet the requirements for digital VRM controller application.

Existence of Periodic Solutions for Generalized Liénard-Typed Functional Differential Equations

The existence of periodic solutions for a kind of generalized Liénard typed functional differential equation is studied. By means of the continuation theorem of coincidence degree theory, existence criteria are established for the existence of periodic solutions and some previous results are extended.

Lazy loading algorithm for traffic assignment of road networks under fixed charge condition

The measures of path charge are important considerations in traffic assignment of road networks. Factors, such as travel time, fixed charge and traffic congestion which affect road users＇ choices of trip paths, are analyzed. Travelers usually decide their trip paths based on their personal habits, preferences and the information at hand. By considering both deterministic and stochastic factors which affect the value of time （VOT） during the process of path choosing, a variational inequality model is proposed to describe the problem of traffic assignment. A lazy loading algorithm for traffic assignment is designed to solve the proposed model, and the calculation steps are given. Numerical experiment results show that compared with the all-or-nothing assignment, the proposed model and the algorithm can provide more optimal traffic assignments for road networks. The results of this study can be used to optimize traffic planning and management.