微电子科学与工程专业“半导体物理”课程教学的改革与探索

“半导体物理”是微电子科学与工程专业的一门非常重要的专业基础课。由于该课程对先修课程的要求较高、知识点繁多、理论性极强,使大多数学生对本门课程的学习产生了畏难情绪,学习效果欠佳。针对传统教学模式中存在的问题,通过改变授课方式、引入科学前沿、借助多媒体教学手段,充分调动学生的学习兴趣、鼓励并引导学生积极探索、运用所学知识解决相关工程实践问题。

“半导体物理与器件”课程思政教学改革探讨

文章从树立以立德树人和提升创新能力为核心的教学理念、挖掘提炼专业知识体系蕴含的思政内容两个方面探讨了“半导体物理与器件”课程思政教学改革,其中挖掘提炼专业知识体系蕴含的思政内容包括认识历史重任,激发科技报国热情;展现榜样力量,培育社会主义核心价值观;结合党史教育,弘扬中华优秀传统文化;讲好亲历故事或见闻,感受改革开放的辉煌成就;训练马克思主义辩证思维方法,培养大国工匠精神。

Interaction of a Surface Acoustic Wave with a Two-dimensional Electron Gas

When a surface acoustic wave （SAW） propagates on the surface of a GaAs semiconductor, coupling between electrons in the two-dimensional electron gas beneath the interface and the elastic host crystal through piezoelectric interaction will attenuate the SAW. The coupling coemcient is ~alculated for the SAW propagating along an arbitrary direction. It is found that the coupling strength is strongly dependent on the propagating direction. When the SAW propagates along the [011] direction, the coupling becomes quite weak.

A NOVEL PHYSICAL-LAYER TRANSCEIVER USED IN USB2.0 SERIAL DATA LINK

The paper proposes a novel transceiver in physical layer for high-speed serial data link based upon Universal Serial Bus (USB) 2.0, comprising transmitter and receiver. In the design, transmitter contains pre-and-main driver to satisfy slew rate of output data, receiver includes optimized topology to improve preci- sion of received data. The circuit simulation is based on Cadence’s spectre software and Taiwan Semiconduc- tor Manufacture Corporation’s library of 0.25μm mixed-signal Complementary Metal-Oxide Semiconductor (CMOS) model. The front and post-simulation results reveal that the transceiver designed can transmit and re- ceive high-speed data in 480Mbps, which is in agreement with USB2.0 specification. The chip of physi- cal-layer transceiver has been designed and implemented with 0.25μm standard CMOS technology.

Vibration Spectrums of Polar Interface Optical Phonons in GaAs／AlAs Cylindrical Quantum Dots

The dispersions of the top interface optical phonons and the side interface optical phonons in cylindrical quantum dots are solved by using the dielectric continuum model. Our calculation mainly focuses on the frequency dependence of the IO phonon modes on the wave-vector and quantum number in the cylindrical quantum dot system.Results reveal that the frequency of top interface optical phonon sensitively depends on the discrete wave-vector in z direction and the azimuthal quantum number, while that of the side interface optical phonon mode depends on the radial and azimuthal quantum numbers. These features are obviously different from those in quantum well, quantum well wire,and spherical quantum dot systems. The limited frequencies of interface optical modes for the large wave-vector or quantum number approach two certain constant values, and the math and physical reasons for this feature have been explained reasonably.

Efficient Mode-locked and Q-switched Nd∶YVO_4 Laser with Semiconductor Saturable Absorber Mirror

We reported an efficient diode pumped Nd∶YVO4 1 064 nm laser passively mode-locked and Q-switched by a semiconductor saturable absorber mirror(SESAM). At the incident pump power of 7.5 W, 2.81 W average output power was obtained during stable CW mode locking with a repetition rate of 111 MHz. The optical conversion efficiency was 37.5%, and the slope efficiency was 39%. So far as we know, this is the highest optical-optical conversion efficiency with a SESAM at home.

Propagation of Ultra-fast Femtosecond Pulses in Silicon-on-insulator Optical Waveguides

A complete theoretical modeling, avoiding any priori-assumption, is deduced and demonstrated for ultra-fast femtosecond optical pulses in silicon-on-insulator optical waveguides which includes the group velocity dispersion, third-order dispersion, self-phase and cross-phase modulations, self-steepening and shock formation, Raman depletion, propagation loss, two-photon absorption, free-carrier absorption, and free-carrier dispersion. Finally, the temporal and spectral characteristics of 100 fs optical pulses at 1.55 μm are numerically observed in 5-mm-long waveguides while considering different initial chirps and incident peak intensity levels.

Phase Transition and Phonon Spectrum of Zinc-Blende Structure ZnX (X=S, Se,Te)

Calculations have been performed to investigate the pressure-induced solid-solid phase transitions and the mechanical stability for three zinc-blende II-VI semiconductor compounds： ZnS, ZnSe, ZnTe by ab initio plane-wave pseudopotential density functional theory （DFT）. Using the generalized gradient approximation （GGA） for exchange and correlation in the scheme of Perdew-Wang 1991 （P Wgl ）, the ground state properties and equation of state are obtained, which are well consistent with the experimental data available and other calculations. On the basis of the forth-order Birch-Murnaghan equation of states, the transition pressures Pt are determined through the analysis of enthalpy variation with pressure. A linear-response approach is used to calculate the frequencies of the phonon dispersion. Finally, by the calculations of phonon frequencies, some thermodynamic properties such as the vibrational contribution to the Helmholtz free energy （F）, enthedpy （H）, entropy （S）, and the heat capacity （Cv ） are also successfully obtained.

Physics of Power Semiconductor Streamer Laser

It is considered the mechanism of streamer discharge in the wide-gap semiconductors as a highly effective method of the laser excitation on the basis of representation about the phenomenon of light self-trapping of the discharge, providing their high propagation velocity down to v- 5 ×10^9 sm/s, the crystallographic orientation, filamentary character at thickness of the channel about 1 μm and absence of destructions of a crystal.

Few-layer Tellurium:one-dimensional-like layered elementary semiconductor with striking physical properties

Few-layer Tellurium, an elementary semiconductor, succeeds most of striking physical properties that black phosphorus(BP) offers and could be feasibly synthesized by simple solution-based methods. It is comprised of non-covalently bound parallel Te chains, among which covalent-like feature appears.This feature is, we believe, another demonstration of the previously found covalent-like quasi-bonding(CLQB) where wavefunction hybridization does occur. The strength of this inter-chain CLQB is comparable with that of intra-chain covalent bonding, leading to closed stability of several Te allotropes. It also introduces a tunable bandgap varying from nearly direct 0.31 eV(bulk) to indirect 1.17 eV(2L) and four(two) complex, highly anisotropic and layer-dependent hole(electron) pockets in the first Brillouin zone.It also exhibits an extraordinarily high hole mobility(~10~5 cm^2/Vs) and strong optical absorption along the non-covalently bound direction, nearly isotropic and layer-dependent optical properties, large ideal strength over 20%, better environmental stability than BP and unusual crossover of force constants for interlayer shear and breathing modes. All these results manifest that the few-layer Te is an extraordinary-high-mobility, high optical absorption, intrinsic-anisotropy, low-cost-fabrication, tunable bandgap, better environmental stability and nearly direct bandgap semiconductor. This ‘‘one-dimen sion-like" few-layer Te, together with other geometrically similar layered materials, may promote the emergence of a new family of layered materials.

Atomically thin InSe:A high mobility two-dimensional material

Since silicon is limited by its physical properties,it is challenging and important to find candidate materials for high performance electronic devices.Two-dimensional（2D）semiconductor materials have attracted dramatically increasing interest due to their unique physical,