The power consumption and electric field distribution in a field emission display （FED） panel is optimized with a novel pixel structure. A circuit model is proposed to estimate the total power consumption in an FED ...The power consumption and electric field distribution in a field emission display （FED） panel is optimized with a novel pixel structure. A circuit model is proposed to estimate the total power consumption in an FED panel which is composed of anode energy consumption, energy loss due to the leakage current and the energy dissipated in the parasitic capacitances. Moreover, the parasitic capacitances play a vital part in the power consumption and driving performance. In order to lower the parasitic capacitances, multiple dielectric layers are used as the gate electrode. Due to different etching speeds, a novel pixel structure is formed. As a result, the power consumption of an FED panel is reduced by 28% in a full white picture, and the electron beam performance is also better than that of the conventional structure.展开更多
The HOPping Field Emission Display （HOPFED） is a new architecture for field emission displays. The main difference between a conventional Field Emission Display （FED） device and a ItOPFED lies in the spacer struct...The HOPping Field Emission Display （HOPFED） is a new architecture for field emission displays. The main difference between a conventional Field Emission Display （FED） device and a ItOPFED lies in the spacer structure. In a HOPFED, two dielectric plates, named hop and flu spacer, are sandwiched between the emitter and the front plate. The objective of this spacer structure is to improve the performance oF a FED substantially with notable contrast, color purity and luminance uniformity. In order to optimize the structure of the device and to make the electron spot on the screen match the requirement of the phosphor dot dimension, the influence of electrical and structural parameters of the device on the electron spot profile was studied by numerical simulation in this paper. Monte Carlo method was employed to calculate the potential distribution inside hop and flu spacers due to secondary electrons mechanism plays an important role in HOPFED. The results indicated that the potential distribution in the spacers and spot profile depended strongly on the hop voltage, anode voltage and spacer＇s layout. This study may provide a useful theoretical support for optimizing the structure in HOPFED.展开更多
基金The National Basic Research Program of China (973Program) (No.2003CB314702).
文摘The power consumption and electric field distribution in a field emission display （FED） panel is optimized with a novel pixel structure. A circuit model is proposed to estimate the total power consumption in an FED panel which is composed of anode energy consumption, energy loss due to the leakage current and the energy dissipated in the parasitic capacitances. Moreover, the parasitic capacitances play a vital part in the power consumption and driving performance. In order to lower the parasitic capacitances, multiple dielectric layers are used as the gate electrode. Due to different etching speeds, a novel pixel structure is formed. As a result, the power consumption of an FED panel is reduced by 28% in a full white picture, and the electron beam performance is also better than that of the conventional structure.
文摘The HOPping Field Emission Display （HOPFED） is a new architecture for field emission displays. The main difference between a conventional Field Emission Display （FED） device and a ItOPFED lies in the spacer structure. In a HOPFED, two dielectric plates, named hop and flu spacer, are sandwiched between the emitter and the front plate. The objective of this spacer structure is to improve the performance oF a FED substantially with notable contrast, color purity and luminance uniformity. In order to optimize the structure of the device and to make the electron spot on the screen match the requirement of the phosphor dot dimension, the influence of electrical and structural parameters of the device on the electron spot profile was studied by numerical simulation in this paper. Monte Carlo method was employed to calculate the potential distribution inside hop and flu spacers due to secondary electrons mechanism plays an important role in HOPFED. The results indicated that the potential distribution in the spacers and spot profile depended strongly on the hop voltage, anode voltage and spacer＇s layout. This study may provide a useful theoretical support for optimizing the structure in HOPFED.
