With the analysis of experiment and theory on GaN HEMT devices under DC sweep,an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT)is pro⁃posed,considering th...With the analysis of experiment and theory on GaN HEMT devices under DC sweep,an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT)is pro⁃posed,considering the relationship between the drain/gate-source voltage and kink effect.The improved model can not only accurately describe the trend of the drain-source current with the current collapse and kink effect,but also precisely fit different values of drain-source voltages at which the kink effect occurs under different gatesource voltages.Furthermore,it well characterizes the DC characteristics of GaN devices in the full operating range,with the fitting error less than 3%.To further verify the accuracy and convergence of the improved model,a load-pull system is built in ADS.The simulated result shows that although both the original ASM-HEMT and the improved model predict the output power for the maximum power matching of GaN devices well,the im⁃proved model predicts the power-added efficiency for the maximum efficiency matching more accurately,with 4%improved.展开更多
The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribu...The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.展开更多
The effects of induction unloading such as drilling, blasting, lancing and water-infusion softening on weakening of rock mechanics properties were investigated. Three stress paths were chosen as test schemes correspon...The effects of induction unloading such as drilling, blasting, lancing and water-infusion softening on weakening of rock mechanics properties were investigated. Three stress paths were chosen as test schemes corresponding to the triaxial compressive test, pre-peak and post-peak unloading the confining pressure tests. The results show that compression deformation is the main cause of rock failure under loading condition. However, the strong dilatation leads to the rock failure along unloading direction. Rock failure happens even under little axial stress with confining pressure unloading. Poisson ratio increases with the decrease of confining pressure during the process of unloading. Elastic modulus increases slowly along with the decline of confining pressure, but decreases rapidly when unloaded to yielding strength. It shows that the weakening rate of rock intensity tends to be faster with easily failure under the unloading condition.展开更多
Ahn To develop a high resolution HPLC method for the determination of ondansetron in human plasma and to study the pharmacokinetics of ondansetron in orally disintegrating tablets. Methods HPLC determination involved ...Ahn To develop a high resolution HPLC method for the determination of ondansetron in human plasma and to study the pharmacokinetics of ondansetron in orally disintegrating tablets. Methods HPLC determination involved liquid-liquid extraction, separation on a CN column and ultraviolet detection at 310 ran with granisetron as an internal standard. Pharmacokinetics and bioequivalence of ondansetron in orally disintegrating tablets by direct compression and conventional 8 mg tablets were evaluated and compared in 20 healthy human male volunteers after a single oral dose in a randomized cross-over study. Results The limit of quantification was 0.25 ng· mL^-1. The recovery was about 85 % or over for ondan setron and about 90% for internal standard. Linearity was good within the concentration range of 0.5 - 50 ng·mL^-1 with r^2 ranging from 0.997 1 to 0.999 9. Intra- and inter-assay coefficients of variation ranged from 1.78% to 2.38% and 3.88% -5.19%, respectively. Accuracies for spiked concentrations of 2.0, 10.0, and 30.0 ng·mL^-1 were 104.7% ±4.4%, 102.2% ± 1.1%, and99.51% ±2.34%, respectively. Pharmacokinetic parameters of AUCo-t, AUCo-∞ , Cmax, Tmax, and T1/2 were 230.2 ± 78.0 ng·h·L^-1 , 265.2± 101.5 ng·h·mL^-1, 35.67 ± 8.94 ng·mL^-l, 1.51 ±0.79 h, and 5.00± 1.41 h for orally disintegrating tablets, respectively. The analysis of variance did not show any significant difference between orally disintegrating tablets and conventional tablets, and 90% confidence intervals fell within the acceptable range for bioequivalence. Conclusion High resolution HPLC method has been set up and applied in pharmacokinetic evaluation of ondansetron in orally disintegrating tablets.展开更多
Aim The aim of the present study was to prepare tablets which can rapidlydisintegrate in saliva, containing active ingredient in high dose (37.5% W/W). Methods Rapidlydisintegrating tablets containing rotundine were p...Aim The aim of the present study was to prepare tablets which can rapidlydisintegrate in saliva, containing active ingredient in high dose (37.5% W/W). Methods Rapidlydisintegrating tablets containing rotundine were prepared by direct compression, wet granulation andmoulding, respectively . Different disintegrants and excipients were decided by single factor test.The typical disintegration time measurement and a new method of wetting time measuring wereintroduced for assessing rapidly disintegrating tablets. Results The tablets (80 mg) prepared bydirect compression have the crushing strength of 4.0 kg ?mm^(-2) and rapidly disintegratewithin 15 s in the saliva of healthy volunteers; the tablets prepared by wet granulation also havesufficient strength, a little longer but acceptable disintegration time (within 25 s in saliva) ;and the tablets obtained by moulding show disintegration within 40 s in saliva but low strength (2kg·mm^(-2)) . Disintegration time profiles of tablets are similar to those of wetting time, and thedisintegration and wetting times in vitro are similar to the disintegration time in vivo, thelatter having higher correlation with that in oral cavity. Conclusion The rapidly disintegratingtablets can be prepared by using these three techniques and excipients. Both in vitro disintegrationtime and wetting time are necessary indexes for judgment of in vitro disintegration profile.展开更多
Although outstanding microwave power performance of AlGaN/GaN HEMTs has been reported,drain current collapse is still a problem. In this paper,an experiment was carried out to demonstrate one factor causing the collap...Although outstanding microwave power performance of AlGaN/GaN HEMTs has been reported,drain current collapse is still a problem. In this paper,an experiment was carried out to demonstrate one factor causing the collapse. Two AlGaN/GaN samples were annealed under N2-atmosphere with and without carbon incorporation, and the XPS measurement technique was used to determine that the concentration of carbon impurity in the latter sample was far higher than in the former. From the comparison of two Id- Vds characteristics,we conclude that carbon impurity incorporation is responsible for the severe current collapse. The carbon impurity-induced deep traps under negative gate bias stress can capture the channel carriers, which release slowly from these traps under positive bias stress,thus causing the current collapse.展开更多
Aim To study the dynamic behavior of voltage across small capacitance Josephson junction. Methods A model of the mesoscopic Josephson junction coupled with a single mode quantized radiation field was used. Results ...Aim To study the dynamic behavior of voltage across small capacitance Josephson junction. Methods A model of the mesoscopic Josephson junction coupled with a single mode quantized radiation field was used. Results A Gaussian type envelope factor exhibiting quantum collapse and revival(CR) phenomenon was obtained. Conclusion It is shown that for the squeezed state the time evolution of the voltage can exhibit drastically quantum CR phenomenon.展开更多
A near-infrared single-photon detection system is established by using pigtailed InGaAs/InP avalanche photodiodes. With a 50GHz digital sampling oscilloscope, the function and process of gated-mode （Geiger-mode） sin...A near-infrared single-photon detection system is established by using pigtailed InGaAs/InP avalanche photodiodes. With a 50GHz digital sampling oscilloscope, the function and process of gated-mode （Geiger-mode） single-photon detection are intuitionally demonstrated for the first time. The performance of the detector as a gated-mode single-photon counter at wavelengths of 1310 and 1550nm is investigated. At the operation temperature of 203K,a quantum efficiency of 52% with a dark count probability per gate of 2.4 × 10 ^-3 ,and a gate pulse repetition rate of 50kHz are obtained at 1550nm. The corresponding parameters are 43%, 8.5 × 10^-3 , and 200kHz at 238K.展开更多
Based on an avalanche photodiode（ APD） detecting array working in Geiger mode（ GM-APD）, a high-performance infrared sensor readout integrated circuit（ ROIC） used for infrared 3D（ three-dimensional） imaging is ...Based on an avalanche photodiode（ APD） detecting array working in Geiger mode（ GM-APD）, a high-performance infrared sensor readout integrated circuit（ ROIC） used for infrared 3D（ three-dimensional） imaging is proposed. The system mainly consists of three functional modules, including active quenching circuit（ AQC）, time-to-digital converter（ TDC） circuit and other timing controller circuit. Each AQC and TDC circuit together constitutes the pixel circuit. Under the cooperation with other modules, the current signal generated by the GM-APD sensor is detected by the AQC, and the photon time-of-flight（ TOF） is measured and converted to a digital signal output to achieve a better noise suppression and a higher detection sensitivity by the TDC. The ROIC circuit is fabricated by the CSMC 0. 5 μm standard CMOS technology. The array size is 8 × 8, and the center distance of two adjacent cells is 100μm. The measurement results of the chip showthat the performance of the circuit is good, and the chip can achieve 1 ns time resolution with a 250 MHz reference clock, and the circuit can be used in the array structure of the infrared detection system or focal plane array（ FPA）.展开更多
The initiation mechanism of debris flow is regarded as the key step in understanding the debrisflow processes of occurrence, development and damage. Moreover, migration, accumulation and blocking effects of fine parti...The initiation mechanism of debris flow is regarded as the key step in understanding the debrisflow processes of occurrence, development and damage. Moreover, migration, accumulation and blocking effects of fine particles in soil will lead to soil failure and then develop into debris flow. Based on this hypothesis and considering the three factors of slope gradient, rainfall duration and rainfall intensity, 16 flume experiments were designed using the method of orthogonal design and completed in a laboratory. Particle composition changes in slope toe, volumetric water content, fine particle movement characteristics and soil failure mechanism were analyzed and understood as follows: the soil has complex, random and unstable structures, which causes remarkable pore characteristics of poor connectivity, non-uniformity and easy variation. The major factors that influence fine particle migration are rainfall intensity and slope. Rainfall intensity dominates particle movement, whereby high intensity rainfall induces a large number of mass movement and sharp fluctuation, causing more fine particles to accumulate at the steep slope toe. The slope toe plays an important role in water collection and fine particleaccumulation. Both fine particle migration and coarse particle movement appears similar fluctuation. Fine particle migration is interrupted in unconnected pores, causing pore blockage and fine particle accumulation, which then leads to the formation of a weak layer and further soil failure or collapses. Fine particle movement also causes debris flow formation in two ways: movement on the soil surface and migration inside the soil. The results verify the hypothesis that the function of fine particle migration in soil failure process is conducive for further understanding the formation mechanism of soil failure and debris flow initiation.展开更多
基金Supported by the National Key R&D Program of China(2022YFF0707800,2022YFF0707801)Primary Research&Development Plan of Jiangsu Province(BE2022070,BE2022070-2)。
文摘With the analysis of experiment and theory on GaN HEMT devices under DC sweep,an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT)is pro⁃posed,considering the relationship between the drain/gate-source voltage and kink effect.The improved model can not only accurately describe the trend of the drain-source current with the current collapse and kink effect,but also precisely fit different values of drain-source voltages at which the kink effect occurs under different gatesource voltages.Furthermore,it well characterizes the DC characteristics of GaN devices in the full operating range,with the fitting error less than 3%.To further verify the accuracy and convergence of the improved model,a load-pull system is built in ADS.The simulated result shows that although both the original ASM-HEMT and the improved model predict the output power for the maximum power matching of GaN devices well,the im⁃proved model predicts the power-added efficiency for the maximum efficiency matching more accurately,with 4%improved.
基金Supported by Shanghai Natural Science Foundation(22ZR1472600).
文摘The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.
基金Project (51074178) supported by the National Natural Science Foundation of ChinaProject (20110162120056) supported by the Special Research Fund for the Doctoral Program of Higher Education of ChinaProject (2011QNZT089) supported by the Young Teachers Boosting Special Subject of Central South University,China
文摘The effects of induction unloading such as drilling, blasting, lancing and water-infusion softening on weakening of rock mechanics properties were investigated. Three stress paths were chosen as test schemes corresponding to the triaxial compressive test, pre-peak and post-peak unloading the confining pressure tests. The results show that compression deformation is the main cause of rock failure under loading condition. However, the strong dilatation leads to the rock failure along unloading direction. Rock failure happens even under little axial stress with confining pressure unloading. Poisson ratio increases with the decrease of confining pressure during the process of unloading. Elastic modulus increases slowly along with the decline of confining pressure, but decreases rapidly when unloaded to yielding strength. It shows that the weakening rate of rock intensity tends to be faster with easily failure under the unloading condition.
文摘Ahn To develop a high resolution HPLC method for the determination of ondansetron in human plasma and to study the pharmacokinetics of ondansetron in orally disintegrating tablets. Methods HPLC determination involved liquid-liquid extraction, separation on a CN column and ultraviolet detection at 310 ran with granisetron as an internal standard. Pharmacokinetics and bioequivalence of ondansetron in orally disintegrating tablets by direct compression and conventional 8 mg tablets were evaluated and compared in 20 healthy human male volunteers after a single oral dose in a randomized cross-over study. Results The limit of quantification was 0.25 ng· mL^-1. The recovery was about 85 % or over for ondan setron and about 90% for internal standard. Linearity was good within the concentration range of 0.5 - 50 ng·mL^-1 with r^2 ranging from 0.997 1 to 0.999 9. Intra- and inter-assay coefficients of variation ranged from 1.78% to 2.38% and 3.88% -5.19%, respectively. Accuracies for spiked concentrations of 2.0, 10.0, and 30.0 ng·mL^-1 were 104.7% ±4.4%, 102.2% ± 1.1%, and99.51% ±2.34%, respectively. Pharmacokinetic parameters of AUCo-t, AUCo-∞ , Cmax, Tmax, and T1/2 were 230.2 ± 78.0 ng·h·L^-1 , 265.2± 101.5 ng·h·mL^-1, 35.67 ± 8.94 ng·mL^-l, 1.51 ±0.79 h, and 5.00± 1.41 h for orally disintegrating tablets, respectively. The analysis of variance did not show any significant difference between orally disintegrating tablets and conventional tablets, and 90% confidence intervals fell within the acceptable range for bioequivalence. Conclusion High resolution HPLC method has been set up and applied in pharmacokinetic evaluation of ondansetron in orally disintegrating tablets.
文摘Aim The aim of the present study was to prepare tablets which can rapidlydisintegrate in saliva, containing active ingredient in high dose (37.5% W/W). Methods Rapidlydisintegrating tablets containing rotundine were prepared by direct compression, wet granulation andmoulding, respectively . Different disintegrants and excipients were decided by single factor test.The typical disintegration time measurement and a new method of wetting time measuring wereintroduced for assessing rapidly disintegrating tablets. Results The tablets (80 mg) prepared bydirect compression have the crushing strength of 4.0 kg ?mm^(-2) and rapidly disintegratewithin 15 s in the saliva of healthy volunteers; the tablets prepared by wet granulation also havesufficient strength, a little longer but acceptable disintegration time (within 25 s in saliva) ;and the tablets obtained by moulding show disintegration within 40 s in saliva but low strength (2kg·mm^(-2)) . Disintegration time profiles of tablets are similar to those of wetting time, and thedisintegration and wetting times in vitro are similar to the disintegration time in vivo, thelatter having higher correlation with that in oral cavity. Conclusion The rapidly disintegratingtablets can be prepared by using these three techniques and excipients. Both in vitro disintegrationtime and wetting time are necessary indexes for judgment of in vitro disintegration profile.
文摘Although outstanding microwave power performance of AlGaN/GaN HEMTs has been reported,drain current collapse is still a problem. In this paper,an experiment was carried out to demonstrate one factor causing the collapse. Two AlGaN/GaN samples were annealed under N2-atmosphere with and without carbon incorporation, and the XPS measurement technique was used to determine that the concentration of carbon impurity in the latter sample was far higher than in the former. From the comparison of two Id- Vds characteristics,we conclude that carbon impurity incorporation is responsible for the severe current collapse. The carbon impurity-induced deep traps under negative gate bias stress can capture the channel carriers, which release slowly from these traps under positive bias stress,thus causing the current collapse.
文摘Aim To study the dynamic behavior of voltage across small capacitance Josephson junction. Methods A model of the mesoscopic Josephson junction coupled with a single mode quantized radiation field was used. Results A Gaussian type envelope factor exhibiting quantum collapse and revival(CR) phenomenon was obtained. Conclusion It is shown that for the squeezed state the time evolution of the voltage can exhibit drastically quantum CR phenomenon.
文摘A near-infrared single-photon detection system is established by using pigtailed InGaAs/InP avalanche photodiodes. With a 50GHz digital sampling oscilloscope, the function and process of gated-mode （Geiger-mode） single-photon detection are intuitionally demonstrated for the first time. The performance of the detector as a gated-mode single-photon counter at wavelengths of 1310 and 1550nm is investigated. At the operation temperature of 203K,a quantum efficiency of 52% with a dark count probability per gate of 2.4 × 10 ^-3 ,and a gate pulse repetition rate of 50kHz are obtained at 1550nm. The corresponding parameters are 43%, 8.5 × 10^-3 , and 200kHz at 238K.
基金The Natural Science Foundation of Jiangsu Province(No.BK2012559)Qing Lan Project of Jiangsu Province
文摘Based on an avalanche photodiode（ APD） detecting array working in Geiger mode（ GM-APD）, a high-performance infrared sensor readout integrated circuit（ ROIC） used for infrared 3D（ three-dimensional） imaging is proposed. The system mainly consists of three functional modules, including active quenching circuit（ AQC）, time-to-digital converter（ TDC） circuit and other timing controller circuit. Each AQC and TDC circuit together constitutes the pixel circuit. Under the cooperation with other modules, the current signal generated by the GM-APD sensor is detected by the AQC, and the photon time-of-flight（ TOF） is measured and converted to a digital signal output to achieve a better noise suppression and a higher detection sensitivity by the TDC. The ROIC circuit is fabricated by the CSMC 0. 5 μm standard CMOS technology. The array size is 8 × 8, and the center distance of two adjacent cells is 100μm. The measurement results of the chip showthat the performance of the circuit is good, and the chip can achieve 1 ns time resolution with a 250 MHz reference clock, and the circuit can be used in the array structure of the infrared detection system or focal plane array（ FPA）.
基金supported by the key international collaborative project of Natural Science Foundation of China(No.41520104002)
文摘The initiation mechanism of debris flow is regarded as the key step in understanding the debrisflow processes of occurrence, development and damage. Moreover, migration, accumulation and blocking effects of fine particles in soil will lead to soil failure and then develop into debris flow. Based on this hypothesis and considering the three factors of slope gradient, rainfall duration and rainfall intensity, 16 flume experiments were designed using the method of orthogonal design and completed in a laboratory. Particle composition changes in slope toe, volumetric water content, fine particle movement characteristics and soil failure mechanism were analyzed and understood as follows: the soil has complex, random and unstable structures, which causes remarkable pore characteristics of poor connectivity, non-uniformity and easy variation. The major factors that influence fine particle migration are rainfall intensity and slope. Rainfall intensity dominates particle movement, whereby high intensity rainfall induces a large number of mass movement and sharp fluctuation, causing more fine particles to accumulate at the steep slope toe. The slope toe plays an important role in water collection and fine particleaccumulation. Both fine particle migration and coarse particle movement appears similar fluctuation. Fine particle migration is interrupted in unconnected pores, causing pore blockage and fine particle accumulation, which then leads to the formation of a weak layer and further soil failure or collapses. Fine particle movement also causes debris flow formation in two ways: movement on the soil surface and migration inside the soil. The results verify the hypothesis that the function of fine particle migration in soil failure process is conducive for further understanding the formation mechanism of soil failure and debris flow initiation.
