Pure metal Fe films with thickness of about 100nm were deposited on Si （100） substrates by DC magnetron sputtering. Annealing was subsequently performed in a vacuum furnace in the temperature range of 600-1000℃ for...Pure metal Fe films with thickness of about 100nm were deposited on Si （100） substrates by DC magnetron sputtering. Annealing was subsequently performed in a vacuum furnace in the temperature range of 600-1000℃ for 2h. The samples were characterized by means of Rutherford backscattering （RBS） with 3MeV carbon ions. The RBS data were fitted with SIMNRA 6.0, and the results show the atomic interdiffusion in Fe/Si systems. The microstructures and crystal structures were characterized by scanning electron microscope and X-ray diffrac- tion. The effects of annealing on atomic interdiffusion, silicide formation, and microstructures in Fe/Si systems were analyzed.展开更多
文摘Pure metal Fe films with thickness of about 100nm were deposited on Si （100） substrates by DC magnetron sputtering. Annealing was subsequently performed in a vacuum furnace in the temperature range of 600-1000℃ for 2h. The samples were characterized by means of Rutherford backscattering （RBS） with 3MeV carbon ions. The RBS data were fitted with SIMNRA 6.0, and the results show the atomic interdiffusion in Fe/Si systems. The microstructures and crystal structures were characterized by scanning electron microscope and X-ray diffrac- tion. The effects of annealing on atomic interdiffusion, silicide formation, and microstructures in Fe/Si systems were analyzed.
