孔道电位封闭及“空穴”传递理论初探

通过对离子交换膜表面 ζ电位和间歇通电时 ,电渗析隔室中离子变化的测定 ,建立了离子交换膜选择透过性的新理论 ,即孔道电位封闭及“空穴”传递理论 .

Impact of 〈100〉Channel Direction for High Mobility p-MOSFETs on Biaxial Strained Silicon

Biaxial strain technology is a promising way to improve the mobility of both electrons and holes, while （100） channel direction appears as to be an effective booster of hole mobility in particular. In this work, the impact of biaxial strain together with （100） channel orientation on hole mobility is explored. The biaxial strain was incorporated by the growth of a relaxed SiGe buffer layer,serving as the template for depositing a Si layer in a state of biaxial tensile strain. The channel orientation was implemented with a 45^o rotated design in the device layout,which changed the channel direction from （110） to （100） on Si （001） surface. The maximum hole mobility is enhanced by 30% due to the change of channel direction from （110） to （100） on the same strained Si （s-Si） p-MOSFETs,in addition to the mobility enhancement of 130% when comparing s-Si pMOS to bulk Si pMOS both along （110） channels. Discussion and analysis are presented about the origin of the mobility enhancement by channel orientation along with biaxial strain in this work.

Side-chain engineering of high-efficiency conjugated polymer photovoltaic materials

In recent years,conjugated polymers have attracted great attention in the application as photovoltaic donor materials in polymer solar cells(PSCs).Broad absorption,lower-energy bandgap,higher hole mobility,relatively lower HOMO energy levels,and higher solubility are important for the conjugated polymer donor materials to achieve high photovoltaic performance.Side-chain engineering plays a very important role in optimizing the physicochemical properties of the conjugated polymers.In this article,we review recent progress on the side-chain engineering of conjugated polymer donor materials,including the optimization of flexible side-chains for balancing solubility and intermolecular packing(aggregation),electron-withdrawing substituents for lowering HOMO energy levels,and two-dimension(2D)-conjugated polymers with conjugated side-chains for broadening absorption and enhancing hole mobility.After the molecular structural optimization by side-chain engineering,the2D-conjugated polymers based on benzodithiophene units demonstrated the best photovoltaic performance,with powerconversion efficiency higher than 9%.

Strain-tunable electronic and transport properties of MoS2 nanotubes

Using density functional theory calculations, we have investigated the mechanical properties and strain effects on the electronic structure and transport properties of molybdenum disulfide （MoS2） nanotubes. At a similar diameter, an armchair nanotube has a higher Young＇s modulus and Poisson ratio than its zigzag counterpart due to the different orientations of Mo-S bond topologies. An increase in axial tensile strain leads to a progressive decrease in the band gap for both armchair and zigzag nanotubes. For armchair nanotube, however, there is a semiconductor-to-metal transition at the tensile strain of about 8%. For both armchair and zigzag nanotubes, the effective mass of a hole is uniformly larger than its electron counterpart, and is more sensitive to strain. Based on deformation potential theory, we have calculated the carrier mobilities of MoS2 nanotubes. It is found that the hole mobility is higher than its electron counterpart for armchair （6, 6） nanotube while the electron mobility is higher than its hole counterpart for zigzag （10, 0） nanotube. Our results highlight the tunable electronic properties of MoS2 nanotubes, promising for interesting applications in nanodevices, such as opto-electronics, photoluminescence, electronic switch and nanoscale strain sensor.

Large-scale fabrication of field-effect transistors based on solution-grown organic single crystals

A simple solution processing method was de- veloped to grow large-scale well-aligned single crystals in- cluding 6,13-bis（triisopropylsilylethynyl）pentacene （TIPS- pentacene）, anthracene, tetracene, perylene, C6o and tetra- cyanoquinodimethane. As pinned by a solid needle, a droplet of semiconductor solution dried into single-crystal arrays on a 1 cm×2 cm substrate. TIPS-pentacene was used to demonstrate the fabrication of hundreds of field- effect transistors （FETs） with the hole mobility as high as 6.46 cm^2 V^-1.s^-1. As such, this work provides a high- throughput, yet efficient approach for statistical examination on the FET performance of organic single crystals.

Developing near-infrared quantum-dot light-emitting diodes to mimic synaptic plasticity

The quantum-dot light-emitting diodes(QLEDs)that emit near-infrared(NIR)light may be important optoelectronic synaptic devices for the realization of artificial neural networks with complete optoelectronic integration.To improve the performance of NIR QLEDs,we take advantage of their low-energy light emission to explore the use of poly(3-hexylthiophene)(P3 HT)as the hole transport layer(HTL).P3 HT has one of the highest hole mobilities among organic semiconductors and essentially does not absorb NIR light.The usage of P3 HT as the HTL indeed significantly mitigates the imbalance of carrier injection in NIR QLEDs.With the additional incorporation of an interlayer of poly[9,9-bis(3’-(N,N-dimethylamino)propyl)-2,7-flourene]-alt-2,7-(9,9-dioctylfluorene)],P3 HT obviously improves the performance of NIR QLEDs.As electroluminescent synaptic devices,these NIR QLEDs exhibit important synaptic functionalities such as short-and long-term plasticity,and may be employed for image recognition.

Optimizing the component ratio of PEDOT:PSS by water rinse for high efficiency organic solar cells over 16.7%

For the state-of-the-art organic solar cells(OSCs),PEDOT:PSS is the most popularly used hole transport material for the conventional structure.However,it still suffers from several disadvantages,such as low conductivity and harm to ITO due to the acidic PSS.Herein,a simple method is introduced to enhance the conductivity and remove the additional PSS by water rinsing the PEDOT:PSS films.The photovoltaic devices based on the water rinsed PEDOT:PSS present a dramatic improvement in efficiency from 15.98%to 16.75%in comparison to that of the untreated counterparts.Systematic characterization and analysis reveal that although part of the PEDOT:PSS is washed away,it still leaves a smoother film and the ratio of PEDOT to PSS is higher than before in the remaining films.It can greatly improve the conductivity and reduce the damage to substrates.This study demonstrates that finely modifying the charge transport materials to improve conductivity and reduce defeats has great potential for boosting the efficiency of OSCs.

Mn-doped SiGe thin films grown by UHV/CVD with room-temperature ferromagnetism and high hole mobility

In this work,silicon-germanium(SiGe)thin films are epitaxially grown on Ge substrates by ultra-high vacuum chemical vapor deposition and then doped with Mn element by ion-implantation and subsequent rapid thermal annealing(RTA).The characterizations show that the epitaxial SiGe thin films are single-crystalline with uniform tensile strain and then become polycrystalline after the ion implantation and following RTA.The magnetization measurements indicate that the annealed thin films exhibit Mn concentration-dependent ferromagnetism up to 309 K and the X-ray magnetic circular dichroism characterizations reveal the spin and orbital magnetic moments from the substitutional Mn element.To minimize the influence of anomalous Hall effect,magneto-transport measurements at a high magnetic field up to 31 T at 300 K are performed to obtain the hole mobility,which reaches a record-high value of~1230 cm^(2)V^(-1)s^(-1),owing to the crystalline quality and tensile strain-induced energy band modulation of the samples.The first demonstration of Mn-doped SiGe thin films with roomtemperature ferromagnetism and high carrier mobility may pave the way for practical semiconductor spintronic applications.

Electrical transport and photoresponse properties of single-crystalline p-type Cd_3As_2 nanowires

Cd3As2 is an important II-V group semiconductor with excellent electrical and optoelectronic properties. In this work, we report the large scale growth of single-crystalline Cd3As2 nanowires via a simple chemical vapor deposition method. Single nanowire field-effect transistors were fabricated with the as-grown Cd3As2 nanowires, which exhibited a high lon/loff of 104 with a hole mobility of 6.02 cm2V-1s-1. Photoresponse properties of the Cd3As2 nanowires were also investigated by illuminating the nanowires with white light by varying intensities. Besides, flexible photodetectors were also fabricated on flexible PET substrate, showing excellent mechanical stablility and flexible electro-optical properties under various bending states and bending cycles. Our results indicate that Cd3As2 nanowires can be the basic material of next generation electronic and ootoelectronic devices.

Carbon nanotubes assisting interchain charge transport in semiconducting polymer thin films towards much improved charge carrier mobility

Conjugated polymers attracted much attention in the past few decades due to their wide applications in various optoelectronic devices and circuits. The charge transport process in conjugated polymers mainly occurs in the intrachain and interchain parts, where the interchain charge transport is generally slower than intrachain transport and may slow down the whole charge transport properties. Aiming at this issue, herein we employ semiconducting single-walled carbon nanotubes(s-SWNTs) as efficient charge-transporting jointing channels between conjugated polymer chains for improving the charge transport performance. Taking the typical conjugated polymer, ploy-N-alkyl-diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene(PDPP-TT) as an example, polymer thin film transistors(PTFTs) based on the optimized blended films of PDPP-TT/s-SWNTs exhibit an obviously increasing device performance compared with the devices based on pure PDPP-TT films, with the hole and electron mobility increased from 2.32 to 12.32 cm^2 V^-1 s^-1 and from 2.02 to 5.77 cm^2 V^-1 s^-1, respectively. This result suggests the importance of forming continuous conducting channels in conjugated polymer thin films, which can also be extended to other polymeric electronic and optoelectronic devices to promote their potential applications in large-area, low-cost and high performance polymeric electronic devices and circuits.

Hole mobility enhancement in uniaxial stressed Ge dependence on stress and transport direction

Utilizing a six-band k.p valence band calculations that considered a strained perturbation Hamiltonian, uniaxial stress-induced valence band structure parameters for Ge such as band edge energy shift, split, and effective mass were quantitatively evaluated. Based on these valence band parameters, the dependence of hole mobility on uniaxial stress(direction, type, and magnitude) and hole transport direction was theoretical studied. The results show that the hole mobility had a strong dependence on the transport direction and uniaxial stress. The hole mobility enhancement can be found for all transport directions and uniaxial stess configurations, and the hole transport along the [110] direction under the uniaxial [110] compressive stress had the highest mobility compared to other transport directions and stress configurations.

Continuous and highly ordered organic semiconductor thin films via dip-coating:the critical role of meniscus angle

Dip-coating is a low-cost,high-throughput technique for the deposition of organic semiconductors over large area on various substrates.Tremendous studies have been done and many parameters such as withdrawal speed,solvent type and solution concentration have been investigated.However,most of the depositions were ribbons or dendritic crystals with low coverage of the substrate due to the ignorance of the critical role of dynamic solution-substrate interactions during dip-coating.In this study,meniscus angle(MA)was proposed to quantify the real-time in-situ solutionsubstrate interactions during dip-coating.By proper surface treatment of the substrate,the value of MA can be tuned and centimeter-sized,continuous and highly ordered organic semiconductor thin films were achieved.The charge transport properties of the continuous thin films were investigated by the construction of organic field-effect transistors.Maximum(average)hole mobility up to 11.9(5.1)cm2V-1s-1was obtained.The average mobility was 82%higher than that of ribbon crystals,indicating the high crystallinity of the thin films.Our work reveals the critical role of dynamic solutionsubstrate interactions during dip-coating.The ability to produce large-area,continuous and highly ordered organic semiconductor thin films by dip-coating could revival the old technique for the application in various optoelectronics.

A novel dopant for spiro-OMeTAD towards efficient and stable perovskite solar cells

2,2’,7,7’-tetrakis-(N,N-di-4-methoxyphenylamino)-9,9’-spirobifluorene(spiro-OMeTAD), as the most commonly used hole transport material(HTM), plays a significant role in the normal structured(n-i-p) high-efficiency perovskite solar cells(PSCs). In general, it is prepared by a halogen solvent(chlorobenzene, CBZ) and needs an ion dopant(lithium bis(trifluoromethanesulfonyl)imide, Li-TFSI) to improve its conductivity and hole mobility. However, such a halogen solvent is not environmentally friendly and the widely used LiTFSI dopant would affect the stability of PSCs. Herein, we develop a non-halogen solvent-tetrahydrofuran(THF)-prepared spiro-OMeTAD solution with a new p-type dopant,potassium bis(fluorosulfonyl)imide(K-FSI), to apply into PSCs. By this strategy, high-hole-mobility spiro-OMeTAD film is achieved. Meanwhile, the potassium ions introduced by diffusion into perovskite surface passivate the interfacial defects. Therefore, a hysteresis-free champion PSC with an efficiency of 21.02% is obtained, along with significantly improved stability against illumination and ambient conditions. This work provides a new strategy for HTMs toward hysteresis-free high-efficiency and stable PSCs by substituting dopants.

Two-dimensional organic single-crystalline p-n junctions for ambipolar field transistors

Two-dimensional single-crystalline p-n junctions of organic semiconductors(pn-2 DCOSs) show great potential in organic logic circuits due to their single crystal nature and excellent ambipolar charge transport. However,there are only few reports on pn-2 DCOSs because it is difficult to obtain such highly ordered structure in p-n junction.Herein, a novel and effective solution processing method of secondary transfer technology based on the facile drop casting is used to fabricate devices of pn-2 DCOSs based on C8-BTBT(p-type) and TFT-CN(n-type) successfully. The high-performance ambipolar field transistors based on such ultrathin pn-2 DCOSs with several molecular layers thickness show wellbalanced ambipolar charge transport behaviors with hole mobility as high as 0.43 cm^2 V^-1 s^-1 and electron mobility up to 0.11 cm^2 V^-1 s(^-1), respectively. This work is essential for studying the intrinsic properties of organic p-n junctions and achieving high performance in organic complementary circuits.

Graphdiyne oxide-accelerated charge carrier transfer and separation at the interface for efficient binary organic solar cells

Interfacial engineering for the regulation of the charge carrier dynamics in solar cells is a critical factor in the fabrication of high-efficiency devices.Based on the successful preparation of highly dispersible graphdiyne oxide(GDYO)with a large number of functional groups,we fabricated organic solar cells employing GDYO-modified poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate)(PEDOT:PSS)as hole transport materials.Results show that theπ±πinteraction between GDYO and PEDOT:PSS is beneficial to the formation of an optimized charge carrier transfer channel and improves the conductivity and charge carrier mobility in the hole transport layer.Moreover,the improved interfacial contact contributes to the suppression of charge carrier recombination and the elevation of charge carrier extraction between the hole transport layer and the active layer.More importantly,the occurrence of charge carrier separation benefits from the optimized morphology of the active layer,which efficiently improves the performance,as proven by the results of transient absorption measurements.Therefore,with the holistic management approach to the multiobjective optimization of the charge carrier dynamics,a photoelectric conversion efficiency of 17.5%(with the certified value of 17.2%)is obtained for binary organic solar cells.All of these results indicate the potential application of the functionalized graphdiyne in the field of organic optoelectronic devices.

Hole mobility of strained Si/(001)Si_(1-x)Ge_x

The hole mobility of strained silicon along the <110> orientation on (001) Si1?xGex is obtained by solving collision term in the Boltzmann transport equation. The analytical model is proposed that considers the effect of strain-induced splitting at valence band valleys in silicon, doping dependence and three scattering mechanisms, i.e., ionized impurity scattering, acoustic phonon scattering and non-polar optical phonon scattering. The hole occupancy at top band indicates a non-monotonic variation under biaxial tensile strain at low temperature (77 K). What's more, a non-monotonic variation of hole mobility at room temperature (300 K) is presented. Compared with the room temperature hole mobility, the low temperature hole mobility is affected greatly by ionized impurity scattering at lower impurity concentration. At the same time, the room temperature hole mobility is lower than that of electron with the same germanium content and doping concentration. If the parameters are correctly chosen, the model can also be used to calculate the hole mobility of other crystal faces with arbitrary orientation. So, it lays a useful foundation for strained silicon devices and circuits.

A-D-A small molecule donors based on pyrene and diketopyrrolopyrrole for organic solar cells

Three new electron donating small molecules （SMs）, Pyr（EH-DPP）2, Pyr（HD-DPP）2 and PyrA（EH-DPP）2, are designed and synthesized through coupling electron rich pyrene core with electron deficient diketopyrrolopyrrole （DPP） terminals, of which the derived organic solar cells （OSCs） exhibit interesting structure-performance correlation. It shows that the tune of their solubilizing side chains and n-bridge for the acceptor-donor-acceptor （A-D-A） SMs can significantly alter the resultant short-circuit current density and power conversion efficiency （PCE） in OSCs. The Pyr（EH-DPP）2 with short side chains displays broader absorption and higher hole mobility than the Pyr（HD-DPP）2 with long side chains. Although showing planar structure, the acetylene bridge-incorporated PyrA（EH-DPP）2 adapts an undesired edge-on packing and strong aggregation in film, leading to non-ideal morphology and poor miscibility with fullerene acceptors. As a result, the PCE of the solar cell based on Pyr（EH-DPP）2 is several times higher than those based on Pyr（HD-DPP）： and PyrA（EH-DPP）2, indicating the A-D-A combination of polyaromatics with DPP would be the promising skeleton for developing photovoltaic semiconductors.

Eliminating the electric field response in a perovskite heterojunction solar cell to improve operational stability

Intrinsic and extrinsic ion migration is a very large threat to the operational stability of perovskite solar cells and is difficult to completely eliminate due to the low activation energy of ion migration and the existence of internal electric field.We propose a heterojunction route to help suppress ion migration,thus improving the operational stability of the cell from the perspective of eliminating the electric field response in the perovskite absorber.A heavily doped p-type(p^(+))thin layer semiconductor is introduced between the electron transporting layer(ETL)and perovskite absorber.The heterojunction charge depletion and electric field are limited to the ETL and p^(+)layers,while the perovskite absorber and hole transporting layer remain neutral.The p^(+)layer has a variety of candidate materials and is tolerant of defect density and carrier mobility,which makes this heterojunction route highly feasible and promising for use in practical applications.