人民币汇率改革及其对中国进出口贸易影响的原因分析

人民币汇制改革以后,人民币升值了,但中国居高不下的贸易顺差的局面并没有改变。但是相关学者认为我国的贸易收支与汇率变动的相关度不高,中国巨大的贸易顺差是低劳动力价格,国际产业转移等深层次根源所造成的结果,人民币升值的贸易改变效应并不大,人民币如果升值过快,幅度过大,就会抑制出口,扩大进口,甚至可能引发金融危机,所以西方国家认为人民币升值就能扭转对华贸易逆差的想法是不切实际的,中国应该坚持自己的汇率政策,保持汇率稳定。

Lattice-Matched InP-Based HEMTs with T^T of 120GHz

Lattice matched InP based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1 2V,and the maximum current density of 500mA/mm.

Fabrication of 4H-SiC Buried-Channel nMOSFETs

The buried channel (BC) nMOSFETs with gate oxide grown thermally on 4H-SiC are fabricated.The BC region and source/drain region are formed by nitrogen implantation at room temperature followed by annealing at 1600℃.The channel depth is about 0.2μm.The peak field-effect mobility of 18.1cm2/(V·s) for 5μm device is achieved.Thickly dotted pits found in the surface through microscope may be one of the important factors of the cause low field-effect mobility.The threshold voltages are 1.73V and 1.72V for the gate lengths of 3μm and 5μm respectively.The transconductance at V G=20V and V D=10V is 102μS for the gate length of 3μm.

Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy

AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized.The HEMT materials have a mobility of 1035cm2/(V·s) at sheet electron concentration of 1.0×10 13cm -2at room temperature.For the devices fabricated using the materials,a maximum saturation drain-current density of 925mA/mm and a peak extrinsic transconductance of 186mS/mm are obtained on devices with gate length and width of 1μm and 80μm respectively.The f t,unit-current-gain frequency of the devices,is about 18.8GHz.

A 0.6 μm CMOS bandgap voltage reference circuit

On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating from 0 to 85 ℃ under a supply voltage ranging from 4.5 to 5.5 V, the voltage reference circuit offers an output reference voltage ranging from 1.122 to 1.176 V and a voltage variation less than ±3.70%. The chip size including bonding pads is only 0.4 mm×0.4 mm and the power dissipation falls inside the scope of 28.3 to 48.8 mW operating at a supply voltage of 4.5 to 5.5 V.

An Analytical Model of Electron Mobility for Strained-Si Channel nMOSFETs

An analytical model of electron mobility for strained-silicon channel nMOSFETs is proposed in this paper. The model deals directly with the strain tensor,and thus is independent of the manufacturing process. It is suitable for （100〉/ 〈110） channel nMOSFETs under biaxial or （100〉/〈 110 ） uniaxial stress and can be implemented in conventional device simulation tools .

Electromigration induced microstructure evolution and damage in asymmetric Cu/Sn-58Bi/Cu solder interconnect under current stressing

The electromigration induced microstructure evolution and damage in asymmetric Cu/Sn-58Bi/Cu solder interconnects were investigated by in-situ SEM observation, focused ion beam （FIB） microanalysis and finite element （FE） simulation. The SEM results show that the electromigration-induced local degradation of microstructures, i.e., segregation of Bi-rich phase and formation of microcracks, in the asymmetric solder interconnects is much severer than that in the symmetrical ones. FIB-SEM microanalysis reveals that the microregional heterogeneity in electrical resistance along different electron flowing paths is the key factor leading to non-uniform current distribution and the resultant electromigration damage. Theoretical analysis and FE simulation results manifest that the current crowding easily occurs at the local part with smaller resistance in an asymmetric solder interconnect. All results indicate that the asymmetric shape of the solder interconnect brings about the difference of the electrical resistance between the different microregions and further results in the severe electromigration damage.

Isotope Effects on Two-Photon Population Transfer Processes of HF and DF

The isotope effects of XF （X=H, D） on the population transfer process via two-photon resonance excitation are investigated by solving the time-dependent SchrSdinger equation. The vibrational levels v=0 and 2 of the ground electronic state are taken to be the initial and target states, respectively, for the two molecular systems. The influences of the field peak amplitude and pulse duration on the population transfer process are discussed in detail. The pulse duration is required to be longer than 860 fs for the DF molecule to achieve a relatively high transfer probability （more than 80%）, while the one for the HF molecule is just required to be longer than 460 fs. Moreover, the intermediate level v=1 and the higher level v=3 may play more important roles in the two-photon resonance process for the DF molecule, compared to the roles in the process for the HF molecule.

First-principles computational studies on Na^(+) diffusion in Li-doped P3-type NaMnO_(2) as cathode material for Na-ion batteries

Na-ion diffusion kinetics is a key factor that decided the charge/discharge rate of the electrode materials in Na-ion batteries.In this work,two extreme concentrations of NaMnO_(2) and Na_(2/3)Li_(1/6)Mn_(5/6)O_(2) are considered,namely,the vacancy migration of Na ions in the fully intercalated and the migration of Na ions in the fully de-intercalated.The Na-vacancy and Na^(+)distribution in NaMnO_(2) migrated along oxygen dumbbell hop(ODH)and tetrahedral site hop(TSH),and the migration energy barriers were 0.374 and 0.296 eV,respectively.In NaLi_(1/6)Mn_(5/6)O_(2),the inhomogeneity of Li doping leads to the narrowing of the interlayer spacing by 0.9%and the increase of the energy barrier by 53.8%.On the other hand,due to the alleviation of Jahn-Teller effect of neighboring Mn,the bonding strength of Mn-O was enhanced,so that the energy barrier of path 2-3 in Mn-L1 and Mn-L2 was the lowest,which was 0.234 and 0.424 eV,respectively.In Na_(1/6)Li_(1/6)Mn_(5/6)O_(2),the migration energy barriers of Na-L2 and Na-L3 are 1.233 and 0.779 eV,respectively,because Li+migrates from the transition(TM)layer to the alkali metal(AM)layer with Na^(+)migration,which requires additional energy.

Dimensionality and Finite Number Effect on BCS Transition of Atomic Fermi Gas

The effect of finite number and dimensionality has been discussed in thispaper. The finite number effect has a negative correction to final temperature for 2D or 3D atomicFermi gases. The changing of final temperature obtained by scanning from BEC region to BCS regionare 10% or so with N ≤ 10~3 and can be negligible when N 】 10~3. However, in ID atomic Fermi gas,the effect gives a positive correction which greatly changes the final temperature in Fermi gas.This behavior is completely opposed to the 2D and 3D cases and a proper explanation is still to befound. Dimensionality also has a positive correction, in which the more tightly trapping, the higherfinal temperature one gets with the same particle number. A discussion is also presented.

High mobility organic semiconductors for field-effect transistors

Organic field-effect transistors(OFETs) are attracting more and more attention due to their potential applications in low-cost, large-area and flexible electronic products. Organic semiconductors(OSCs) are the key components of OFETs and basically determine the device performance. The past five years have witnessed great progress of OSCs. OSCs used for OFETs have made rapid progress, with field-effect mobility much larger than that of amorphous silicon(0.5?1.0 cm2/(V s)) and of up to 10 cm2/(V s) or even higher. In this review, we demonstrate the latest progress of OSCs for OFETs, where more than 50 representative OSCs are highlighted and analyzed to give some valuable insights for this important but challenging field.

Full-solution-processed high mobility zinc-tin-oxide thin-film-transistors

The full solution-processed oxide thin-film-transistors(TFTs) have the advantages of transparency, ease of large-area fabrication, and low cost, offering great potential applications in switching and driving fields, and attracting extensive research interest. However, the performance of the solution-processed TFTs is generally lower than that of the vacuum-deposited ones. In this article, the full-solution processed TFTs with zinc-tin-oxide(ZTO) semiconductor and aluminium(Al_2O_3) dielectrics were fabricated, and their mobilities in the saturation region are high. Besides, the effect of the Al_2O_3 dielectrics' preparation technology on ZTO TFTs' performance was studied. Comparing the ZTO TFTs using the spin-coated Al_2O_3 dielectrics of 1–4 layers, the ZTO TFT with 3-layer Al_2O_3 dielectrics achieved the optimal performance as its field-effect carrier mobility in the saturation region is 112 cm^2/V s, its threshold voltage is 2.4 V, and its on-to-off current ratio is 2.8×105. This is also the highest reported carrier mobility of the solution-processed ZTO TFTs.

Effects of P3HT concentration on the performance of organic field effect transistors

Top-contact organic field effect transistors(OFETs) based on poly(3-hexylthiophene)(P3HT) with different concentrations in chloroform(CHCl3) are fabricated.The output characteristics indicate that the P3HT concentration has significant influence on the OFET devices.The performance of the devices firstly is enhanced with increasing the P3HT concentration,and then decreases.The optimized devices with the P3HT concentration of 2 mg/mL show the best performance.The fieldeffect mobility is up to 1.4×10-2 cm2/Vs,the threshold voltage(Vt) is as low as-20 V,and the current on/off ratio(Ion/off) is close to the order of 104.The results suggest that the P3HT aggregation patterns induced by different concentrations can improve the performance of the OFETs.

Electrical transport and photoresponse properties of single-crystalline p-type Cd_3As_2 nanowires

Cd3As2 is an important II-V group semiconductor with excellent electrical and optoelectronic properties. In this work, we report the large scale growth of single-crystalline Cd3As2 nanowires via a simple chemical vapor deposition method. Single nanowire field-effect transistors were fabricated with the as-grown Cd3As2 nanowires, which exhibited a high lon/loff of 104 with a hole mobility of 6.02 cm2V-1s-1. Photoresponse properties of the Cd3As2 nanowires were also investigated by illuminating the nanowires with white light by varying intensities. Besides, flexible photodetectors were also fabricated on flexible PET substrate, showing excellent mechanical stablility and flexible electro-optical properties under various bending states and bending cycles. Our results indicate that Cd3As2 nanowires can be the basic material of next generation electronic and ootoelectronic devices.

Low-power high-mobility organic single-crystal field-effect transistor

Evolving flexible electronics requires the development of high-mobility and low-power organic field-effect transistors(OFETs)that are crucial for emerging displays,sensors,and label technologies.Among diverse materials,polymer gate dielectrics and two-dimensional(2D)organic crystals have intrinsic flexibility and natural compatibility with each other for OFETs with high performance;however,their combination lacks non-impurity and non-damage construction strategies.In this study,we developed a desirable OFET system using damage-free transfer of 2D organic single crystal,dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene on a unique polymer dielectric layer,poly(amic acid)(PAA).Benefiting from the unique PAA surface nanostructure and the long-range ordered characteristics of the 2D organic single crystal,the resulting OFETs show remarkable performance with high mobility and low operating voltage of 18.7 cm^(2) V^(−1) s^(−1) and−3 V,respectively.The result indicates that combining polymer gate dielectric with 2D organic single crystal using a high-quality method can produce flexible electronic devices with high performance.

Liquid phase exfoliated boron nanosheets for all-optical modulation and logic gates

Boron nanosheets possess unique photoelectric properties, including photosensitivity, photoresponse,and optical nonlinearity. In this article, we show the interaction between light and boron nanosheets in which concentric rings formed in the far field, which attributed to the strong Kerr nonlinearity of boron nanosheets. Furthermore, the distortion, regulation and relationship between the Kerr nonlinearity and effective mass or carrier mobility of the diffraction rings of boron nanosheets have been investigated.Our work shows that the spatial self-phase modulation effect of boron nanosheets is indeed caused by nonlocal electronic coherence. In addition, we have implemented all-light modulation and all-light logic gates based on the prepared boron nanosheets. We believe that our results will provide a powerful demonstration of nonlinear photonic devices based on boron nanosheets and a reference for photonic devices based on two-dimensional materials.