Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give ...Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give stress-induced average interface traps for characterizing the device’s hot carrier characteristics. For the tested device, an expected power law relationship of △Nit-t0.787 between pure stress-induced interface traps and accumulated stressing time is obtained.展开更多
By utilizing the panel data of 26 cities in the Yangtze River Delta urban agglomeration of China from 2000 to 2018, this study constructs a panel threshold model to examine the nonlinear relationship between Tourism E...By utilizing the panel data of 26 cities in the Yangtze River Delta urban agglomeration of China from 2000 to 2018, this study constructs a panel threshold model to examine the nonlinear relationship between Tourism Environmental Carrying Capacity(TECC) and Tourism Industry Agglomeration(TIA). TECC is evaluated based on the Driver-Pressure-State-Impact-Response(DPSIR) model, and TIA is estimated by the location quotient index.The analysis reveals that TIA and TECC both show growth trends and significant regional differences among the 26cities, but the latter fluctuates at certain stages. Moreover, TIA has a significant double threshold effect on TECC,which shows that the positive impact of TIA is enhanced initially but then weakens afterwards. Theoretically, this study contributes to enriching the current literature on TECC from the perspective of TIA. Practically, it could help local governments effectively arrange agglomerations to promote the sustainable development of the tourism industry in China.展开更多
基金Sponsored by Motorola-Peking University Joint Project.Contract No.:MSPSDDLCHINA-0004
文摘Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give stress-induced average interface traps for characterizing the device’s hot carrier characteristics. For the tested device, an expected power law relationship of △Nit-t0.787 between pure stress-induced interface traps and accumulated stressing time is obtained.
基金The National Social Science Fund Project of China (21BGL02119BGL138)+1 种基金The Macro Decision-making Projects on Culture and Tourism of China Tourism Academy (2021HGJCG04)The Natural Science Planning Project in Shandong Province (ZR202102200015)。
文摘By utilizing the panel data of 26 cities in the Yangtze River Delta urban agglomeration of China from 2000 to 2018, this study constructs a panel threshold model to examine the nonlinear relationship between Tourism Environmental Carrying Capacity(TECC) and Tourism Industry Agglomeration(TIA). TECC is evaluated based on the Driver-Pressure-State-Impact-Response(DPSIR) model, and TIA is estimated by the location quotient index.The analysis reveals that TIA and TECC both show growth trends and significant regional differences among the 26cities, but the latter fluctuates at certain stages. Moreover, TIA has a significant double threshold effect on TECC,which shows that the positive impact of TIA is enhanced initially but then weakens afterwards. Theoretically, this study contributes to enriching the current literature on TECC from the perspective of TIA. Practically, it could help local governments effectively arrange agglomerations to promote the sustainable development of the tourism industry in China.
