The hot carrier effects under off- state stress m ode( Vgs=0 ,Vds<0 ) have been investigated on9nm P- MOSFETs with channel length varying from1.0 2 5 μm to0 .5 2 5 μm.Both on- and off- state currents are discuss...The hot carrier effects under off- state stress m ode( Vgs=0 ,Vds<0 ) have been investigated on9nm P- MOSFETs with channel length varying from1.0 2 5 μm to0 .5 2 5 μm.Both on- and off- state currents are discussed. It is found that the off- state leakage current decreases after a higher voltage stressing,which is induced by the charge injection occurred close to the drain junction.However,the leakage current increases after a lower voltage stressing because of the newly generated interface traps.It is also found that the on state saturation current and threshold voltage degrade significantly with the stress tim e,which we believe is due to the charges injected near the gate- drain overlapping region and/ or the stress- induced interface trap generation.The degradation of Idsatcan be ex- pressed as a function of the product of the gate current( Ig) and the num ber of charges injected into the gate oxide ( Qinj) in a simple power law.Finally,a lifetime prediction model based on the degradation of Idsatis proposed.展开更多
In this study,a porous inorganic/organic(ZnO/PEIE,where PEIE is polyethylenimine ethoxylated)(P-ZnO)hybrid material has been developed and adopted in the inverted organic solar cells(OSCs).The P-ZnO serving as the ele...In this study,a porous inorganic/organic(ZnO/PEIE,where PEIE is polyethylenimine ethoxylated)(P-ZnO)hybrid material has been developed and adopted in the inverted organic solar cells(OSCs).The P-ZnO serving as the electron transport layer(ETL)not only presents an ameliorative work function,but also forms the cratered surface with increased ohmic contact area,revealing suppressed charge recombination and enhanced charge extraction in devices.Particularly,P-ZnO-based OSCs show improved light trapping in the active layer compared with ZnO-based ones.The universality of P-ZnO serving as ETL for efficient OSCs is verified on three photovoltaic systems of PBDB-T/DTPPSe-2 F,PM6/Y6,and PTB7-Th/PC_(71)BM.The enhancements of 8%in power conversion efficiency(PCE)can be achieved in the state-of-the-art OSCs based on PBDB-T/DTPPSe-2F,PM6/Y6,and PTB7-Th/PC_(71)BM,delivering PCEs of 14.78%,16.57%,and 9.85%,respectively.Furthermore,a promising PCE of14.13%under air-processed condition can be achieved for PZnO/PBDB-T/DTPPSe-2F-based OSC,which is among the highest efficiencies reported for air-processed OSCs in the literature.And the P-ZnO/PBDB-T/DTPPSe-2F-based device also presents superior long-term storage stability whether in nitrogen or ambient air-condition without encapsulation,which can maintain over 85%of its initial efficiency.Our results demonstrate the great potential of the porous hybrid PZnO as ETL for constructing high-performance and air-stable OSCs.展开更多
文摘The hot carrier effects under off- state stress m ode( Vgs=0 ,Vds<0 ) have been investigated on9nm P- MOSFETs with channel length varying from1.0 2 5 μm to0 .5 2 5 μm.Both on- and off- state currents are discussed. It is found that the off- state leakage current decreases after a higher voltage stressing,which is induced by the charge injection occurred close to the drain junction.However,the leakage current increases after a lower voltage stressing because of the newly generated interface traps.It is also found that the on state saturation current and threshold voltage degrade significantly with the stress tim e,which we believe is due to the charges injected near the gate- drain overlapping region and/ or the stress- induced interface trap generation.The degradation of Idsatcan be ex- pressed as a function of the product of the gate current( Ig) and the num ber of charges injected into the gate oxide ( Qinj) in a simple power law.Finally,a lifetime prediction model based on the degradation of Idsatis proposed.
基金the National Natural Science Foundation of China(21905137)the Natural Science Foundation of Jiangsu Province(BK20180496)。
文摘In this study,a porous inorganic/organic(ZnO/PEIE,where PEIE is polyethylenimine ethoxylated)(P-ZnO)hybrid material has been developed and adopted in the inverted organic solar cells(OSCs).The P-ZnO serving as the electron transport layer(ETL)not only presents an ameliorative work function,but also forms the cratered surface with increased ohmic contact area,revealing suppressed charge recombination and enhanced charge extraction in devices.Particularly,P-ZnO-based OSCs show improved light trapping in the active layer compared with ZnO-based ones.The universality of P-ZnO serving as ETL for efficient OSCs is verified on three photovoltaic systems of PBDB-T/DTPPSe-2 F,PM6/Y6,and PTB7-Th/PC_(71)BM.The enhancements of 8%in power conversion efficiency(PCE)can be achieved in the state-of-the-art OSCs based on PBDB-T/DTPPSe-2F,PM6/Y6,and PTB7-Th/PC_(71)BM,delivering PCEs of 14.78%,16.57%,and 9.85%,respectively.Furthermore,a promising PCE of14.13%under air-processed condition can be achieved for PZnO/PBDB-T/DTPPSe-2F-based OSC,which is among the highest efficiencies reported for air-processed OSCs in the literature.And the P-ZnO/PBDB-T/DTPPSe-2F-based device also presents superior long-term storage stability whether in nitrogen or ambient air-condition without encapsulation,which can maintain over 85%of its initial efficiency.Our results demonstrate the great potential of the porous hybrid PZnO as ETL for constructing high-performance and air-stable OSCs.
