The polycrystalline Si3N4/TiN ceramic nano-multilayer films have been synthesized on Si substrates by a reactive magnetron Sputtering technique, aiming at investigating the effects of modulation ratio and modulation p...The polycrystalline Si3N4/TiN ceramic nano-multilayer films have been synthesized on Si substrates by a reactive magnetron Sputtering technique, aiming at investigating the effects of modulation ratio and modulation period on the microhardness and to elucidate the hardening mechanisms of the synthesized nanomultilayer films. The results showed that the hardness of Si3N4/TiN nano-multilayers is affected not only by modulation period, but also by modulation ratio. The hardness reaches its maximum value when modulation period equa1s a critical value λ0, which is about 12 nm with a modulation ratio of 3: 1. The maximum hardness value is about 40% higher than the value calculated from the rule of mixtures. The hardness of nano-multilayer thin films was found to decrease rapidly with increasing or decreasing modulation period from the Point of λ0. The microstructures of the nano-multilayer films have been investigated using XRD and TEM. Based on experimental results, the mechanism of the superhardness in this system was proposed.展开更多
Crystalline phase and microstructure control are critical for obtaining desired properties of Ta films deposited by magnetron sputtering.Structure,phase evolution and properties of Ta films deposited by using hybrid h...Crystalline phase and microstructure control are critical for obtaining desired properties of Ta films deposited by magnetron sputtering.Structure,phase evolution and properties of Ta films deposited by using hybrid high power impulse magnetron sputtering(HiPIMS)and direct current magnetron sputtering(DCMS)under different fractions of DCMS power were investigated,where Ta ion to Ta neutral ratios of the deposition flux were changed.The results revealed that the number of Ta ions arriving on the substrate/growing film plays an important role in structure and phase evolution of Ta films.It can effectively avoid the unstable arc discharge under low pressure and show a higher deposition rate by combining HiPIMS and DCMS compared with only HiPIMS.Meanwhile,the high hardnessα-Ta films can be directly deposited by hybrid co-sputtering compared to those prepared by DCMS.In the co-sputtering technology,pureα-Ta phase films with extremely fine,dense and uniform crystal grains were obtained,which showed smooth surface roughness(3.22 nm),low resistivity(38.98μ?·cm)and abnormal high hardness(17.64 GPa).展开更多
Carbon nitride films are deposited on Si (001) substrates by reactive dc magnetron sputtering graphite in a pure N2 discharge. The structure of carbon nitride films has been probed using Fourier transformation infrare...Carbon nitride films are deposited on Si (001) substrates by reactive dc magnetron sputtering graphite in a pure N2 discharge. The structure of carbon nitride films has been probed using Fourier transformation infrared, near edge X-ray absorption fine structure (NEXAFS) and high resolution electron microscopy (HREM), and the hardness has been evaluated in nanoin-dentation experiments. FTIR spectra show that N atoms are bound to sp1, sp2, and sp3 hybridized C atoms. C1s NEXAFS spectra show that the intensity of π* resonance is the lowest for the film grown at substrate temperature TS = 350℃, with a turbostratic-like structure and high hardness, while it is the highest for the film grown at TS = 100℃, with an amorphous structure and low hardness. The correlation between the structure and hardness of carbon nitride films has been discussed.展开更多
The purpose of this study was to investigate the effects of Zr interlayer on the structure and mechanical properties of TiAlN films, which were deposited on the M2 high-speed steel substrates by means of plasma-enhanc...The purpose of this study was to investigate the effects of Zr interlayer on the structure and mechanical properties of TiAlN films, which were deposited on the M2 high-speed steel substrates by means of plasma-enhanced magnetron sputtering. The result shows that the crystal orientation of Zr/TiAlN films is similar to that of single-layered TiAlN films, but the difference is that AlN(111) of Zr/TiAlN films disappears completely. With respect to Zr interlayer, the texture coefficient of Zr/TiAlN films is approximately 1. Zr/TiAlN films exhibit a compact isometric structure, which is distinctly different from the columnar structure existing in the single-layered TiAlN films and Ti/TiAlN films. The hardness and H3/E*2 of Zr/TiAlN films are, respectively, enhanced to be 36.6 GPa and 0.147. With a few cracks emerging around the indention, the adhesion strength of TiAlN films is obviously advanced by adding Zr metal interlayer.展开更多
文摘The polycrystalline Si3N4/TiN ceramic nano-multilayer films have been synthesized on Si substrates by a reactive magnetron Sputtering technique, aiming at investigating the effects of modulation ratio and modulation period on the microhardness and to elucidate the hardening mechanisms of the synthesized nanomultilayer films. The results showed that the hardness of Si3N4/TiN nano-multilayers is affected not only by modulation period, but also by modulation ratio. The hardness reaches its maximum value when modulation period equa1s a critical value λ0, which is about 12 nm with a modulation ratio of 3: 1. The maximum hardness value is about 40% higher than the value calculated from the rule of mixtures. The hardness of nano-multilayer thin films was found to decrease rapidly with increasing or decreasing modulation period from the Point of λ0. The microstructures of the nano-multilayer films have been investigated using XRD and TEM. Based on experimental results, the mechanism of the superhardness in this system was proposed.
基金supported by the National Natural Science Foundation of China(Grant No.51401194)。
文摘Crystalline phase and microstructure control are critical for obtaining desired properties of Ta films deposited by magnetron sputtering.Structure,phase evolution and properties of Ta films deposited by using hybrid high power impulse magnetron sputtering(HiPIMS)and direct current magnetron sputtering(DCMS)under different fractions of DCMS power were investigated,where Ta ion to Ta neutral ratios of the deposition flux were changed.The results revealed that the number of Ta ions arriving on the substrate/growing film plays an important role in structure and phase evolution of Ta films.It can effectively avoid the unstable arc discharge under low pressure and show a higher deposition rate by combining HiPIMS and DCMS compared with only HiPIMS.Meanwhile,the high hardnessα-Ta films can be directly deposited by hybrid co-sputtering compared to those prepared by DCMS.In the co-sputtering technology,pureα-Ta phase films with extremely fine,dense and uniform crystal grains were obtained,which showed smooth surface roughness(3.22 nm),low resistivity(38.98μ?·cm)and abnormal high hardness(17.64 GPa).
文摘Carbon nitride films are deposited on Si (001) substrates by reactive dc magnetron sputtering graphite in a pure N2 discharge. The structure of carbon nitride films has been probed using Fourier transformation infrared, near edge X-ray absorption fine structure (NEXAFS) and high resolution electron microscopy (HREM), and the hardness has been evaluated in nanoin-dentation experiments. FTIR spectra show that N atoms are bound to sp1, sp2, and sp3 hybridized C atoms. C1s NEXAFS spectra show that the intensity of π* resonance is the lowest for the film grown at substrate temperature TS = 350℃, with a turbostratic-like structure and high hardness, while it is the highest for the film grown at TS = 100℃, with an amorphous structure and low hardness. The correlation between the structure and hardness of carbon nitride films has been discussed.
基金financially supported by the Ministry of Industry and Information Technology of China(No.2012ZX04003011)the National Natural Science Foundation of China(No.51275323)
文摘The purpose of this study was to investigate the effects of Zr interlayer on the structure and mechanical properties of TiAlN films, which were deposited on the M2 high-speed steel substrates by means of plasma-enhanced magnetron sputtering. The result shows that the crystal orientation of Zr/TiAlN films is similar to that of single-layered TiAlN films, but the difference is that AlN(111) of Zr/TiAlN films disappears completely. With respect to Zr interlayer, the texture coefficient of Zr/TiAlN films is approximately 1. Zr/TiAlN films exhibit a compact isometric structure, which is distinctly different from the columnar structure existing in the single-layered TiAlN films and Ti/TiAlN films. The hardness and H3/E*2 of Zr/TiAlN films are, respectively, enhanced to be 36.6 GPa and 0.147. With a few cracks emerging around the indention, the adhesion strength of TiAlN films is obviously advanced by adding Zr metal interlayer.
