Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

The variations of single event transient(SET)pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor(Fin FET)inverter chains with different driven strengths are measured at different temperatures.Three-dimensional(3D)technology computer-aided design simulations are carried out to study the SET pulse width and saturation current varying with temperature.Experimental and simulation results indicate that the increase in temperature will enhance the parasitic bipolar effect of bulk Fin FET technology,resulting in the increase of SET pulse width.On the other hand,the increase of inverter driven strength will change the layout topology,which has a complex influence on the SET temperature effects of Fin FET inverter chains.The experimental and simulation results show that the device with the strongest driven strength has the least dependence on temperature.

A Straightforward Method of Calculating Finely the Soft X-Ray Spectra of Hydrogenlike Highly Ionized-States

A new method of calculating finely the soft X ray spectra of hydrogenlike highly ionized states is presented. It is based on the relation of the ionicity and the ionization energies of hydrogenlike atoms and the new model of potential function of hydrogenlike atoms. The relativistic revision and the spin orbit couping of excitation energy levels are taken into account. The calculated results are in good agreement with the experiments.

Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.

Analyzing the transient effects of 60Co gamma rays in a CIS by Monte Carlo method

The objective of this work is to analyze the transient effects of ^60Co gamma rays in the CMOS image sensor (CIS) using the Monte Carlo method, based on Geant4. The track, energy spectrum, and angle of produced electrons when gamma rays traversed a silicon or silicon dioxide cube were calculated. A simplified model of a 500 × 500 CIS array was established, and the transient effects of gamma rays in the CIS were simulated. The raw images were captured when the CIS was irradiated by gamma rays. The experimental results were compared with the simulation results. The characteristics of the typical events induced by transient effects were analyzed.

Investigation of bystander effect in Molt-4 cells induced by ultraviolet ray

Objective： To find out whether ultraviolet ray, a kind of non-ionic ray, could cause the bystander effect, the UV exposed MOLT-4 cells had been investigated. Methods： Two experiment groups were carried out, in which cells were culture and treated at two concentrations： 2 × 10^5/mL and 5 × 10^5/mL. All other treatments were the same. Part of the cells was labeled with DID and exposed to UV ray for 40 s as effect cells; other cells was untreated as bystander cells. Then, the cells were co-cultured and harvested at 4 h interval over a period of 24 h. Annexin V-FITC/PI assay was used to evaluate the bystander effect in bystander cells co-cultured with effected cells. Laser confocal microscope method was used to observe the morphologic changes of the bystander cells. Results： The percentage of cells undergoing apoptosis in the bystander cells was increased over time compared with the control group. They were 6.84%, 8.09%, 9.88%, 17.64%, 17.43%, 30.99% and 37.93% respectively in 0 h, 4 h, 8 h, 12 h, 16 h, 20 h and 24 h. When observed by laser scanning confocal microscope, the bystander cells show some classic character of apoptosis such as chromosome condense, phosphatidylsedne transfer and formation of apoptotic bodies. Conclusion： Bystander effect is significant in un-irradiated bystander MOLT-4 cells when co-cultured with UV exposed cells.

14 nm pFinFET 器件抗单粒子辐射的加固方法

为探究先进互补金属氧化物半导体(CMOS)工艺在空间应用中的可靠性问题,研究14 nm工艺下P型沟道鳍式场效应晶体管(pFinFET)器件中的抗单粒子瞬态(SET)加固策略。通过在器件中插入平行于鳍方向的重掺杂N型沟槽(Ntie)和P型沟槽(Ptie)来减缓SET的影响。三维TCAD仿真结果表明:加固之后器件的抗SET特性和沟槽本身的偏置条件相关。当重掺杂沟槽处于零偏状态时,抗辐射加固的性能最好,SET脉冲宽度降低程度可达40%左右;然而,当处于反偏状态时,由于特殊的电荷收集过程的存在,使得SET脉冲幅度反而会明显增大,脉冲宽度减小程度并不明显。此外,还研究沟槽面积、间距及掺杂浓度对pFinFET中的SET脉冲宽度的影响,得到提高抗SET效果的加固方法。

FinFET芯片TEM样品制备及避免窗帘效应方法

制备高质量纳米尺度芯片透射电子显微镜(TEM)样品对于探索半导体器件结构设计、材料分布与芯片性能之间的关系具有重要的意义。使用聚焦离子束(FIB)/扫描电子显微镜(SEM)双束系统制备14 nm鳍式场效应晶体管(FinFET)截面TEM样品,制备过程中从技术角度提出了两种自下而上制样方案来抑制窗帘效应。为扩大样品的可表征视场范围,在避免样品弯曲的前提下,提出了一种薄片提取方法。结果表明,离子束流越大,窗帘效应越严重,自下而上方法能有效规避窗帘效应;离子束电压30 kV时采用清洗截面(CCS)模式、5 kV/2 kV时采用矩形模式,样品台倾斜补偿角度为1.5°~3.5°,进行交叉减薄,且最终铣削长度控制在1μm时减薄效果最好;新的薄片提取方法改变了样品的铣削方向,在避免窗帘效应破坏感兴趣结构和样品弯曲的前提下,将样品的可表征视场范围扩大了5倍。研究结果对优化TEM样品制备方法以及芯片失效分析提供了参考。

The Effect of Spatial Structure Character of Heat Source on the Ray Path and the Evolution of Wave Energy of Meridional Wave Train

This paper studies correlations between the spatial structure character of thermal forcing and deformation and the amplitude of rays of meridional wave train. It is shown that if thermal forcing appears a meridional linear variation the rays of quasi-stationary planetary wave may propagate along oblique lines and if the meridional variability of heat source has second order term the rays show distinct deformation as a great circular route. Additionally, the inhomogeneous distribution may cause lower frequency oscillations in mid- and low-latitudes. The combination of zonal and meridional wave numbers and distributive character of heat source may form an inverse mechanism of variational trend of generized wave energy, reflecting in some degree the physical process of transition between meridional and zonal flow patterns.

Non-Thermal Biological Effect of Graphene Far-Infrared Ray on Saccharomyces cerevisiae Cells

Graphene materials can emit far-infrared ray, but the biological effects of graphene far-infrared ray have not been studied. Furthermore, the non-thermal biological effect of far-infrared ray on organism has not been systematically studied independently of the thermal effect. The purpose of this study was to investigate the non-thermal biological effect of graphene far-infrared ray (gFIR) on Saccharomyces cerevisiae cells. In this work, stringent control of the cultivation conditions was carried out to ensure the stability and constancy of the culture and its temperature. Flow cytometry was used to detect the non-thermal effect of gFIR irradiation on cell membrane permeability, mitochondrial membrane potential (MMP) and intracellular reactive oxygen species (ROS) content. Compared with the control group, cell membrane permeability of the gFIR exposure cells decreased by 4.7%, MMP increased by 16% and intracellular ROS reduced by 10.7%. The results revealed the valuable features of the non-thermal biological effect of gFIR on Saccharomyces cerevisiae cells, and the further analysis demonstrated that graphene far-infrared materials should have great application value in disease prevention and health promotion.

Localized Theoretical Analysis of Thermal Performance of Individually Finned Heat Pipe Heat Exchanger for Air Conditioning with Freon R404A as Working Fluid

This work contributes to the improvement of energy-saving in air conditioning systems. The objective is to apply the thermal efficiency of heat exchangers for localized determination of the thermal performance of heat exchangers with individually finned heat pipes. The fundamental parameters used for performance analysis were the number of fins per heat pipe, the number of heat pipes, the inlet temperatures, and the flow rates of hot and cold fluids. The heat exchanger under analysis uses Freon 404A as a working fluid in an air conditioning system for cooling in the Evaporator and energy recovery in the Condenser. The theoretical model is localized and applied individually to the Evaporator, Condenser, and heat exchanger regions. The results obtained through the simulation are compared with experimental results that use a global approach for the heat exchanger. The thermal quantities obtained through the theoretical model in the mentioned regions are air velocity, Nusselt number, thermal effectiveness, heat transfer rate, and outlet temperature. The comparisons made with global experimental results are in excellent agreement, demonstrating that the localized theoretical approach developed is consistent and can be used as a comprehensive analysis tool for heat exchangers using heat pipes.

Localized Theoretical Analysis of Thermal Performance of Individually Finned Heat Pipe Heat Exchanger for Air Conditioning with Freon R404A as Working Fluid

This work contributes to the improvement of energy-saving in air conditioning systems. The objective is to apply the thermal efficiency of heat exchangers for localized determination of the thermal performance of heat exchangers with individually finned heat pipes. The fundamental parameters used for performance analysis were the number of fins per heat pipe, the number of heat pipes, the inlet temperatures, and the flow rates of hot and cold fluids. The heat exchanger under analysis uses Freon 404A as a working fluid in an air conditioning system for cooling in the Evaporator and energy recovery in the Condenser. The theoretical model is localized and applied individually to the Evaporator, Condenser, and heat exchanger regions. The results obtained through the simulation are compared with experimental results that use a global approach for the heat exchanger. The thermal quantities obtained through the theoretical model in the mentioned regions are air velocity, Nusselt number, thermal effectiveness, heat transfer rate, and outlet temperature. The comparisons made with global experimental results are in excellent agreement, demonstrating that the localized theoretical approach developed is consistent and can be used as a comprehensive analysis tool for heat exchangers using heat pipes.

The Role of Atmospheric Pressure, Temperature, and Humidity on Cosmic Ray Muons at a Low Latitude Station

This study aimed to investigate the relationship between atmospheric conditions and cosmic ray (CR) muons using daily and monthly CR data collected by the KAAU muon detector in Jeddah, Saudi Arabia between 2007 and 2012. Specifically, the study examined the effects of atmospheric pressure, air temperature, and relative humidity on CR muons at different time scales (annual, seasonal, and monthly). The results of the analysis revealed that atmospheric pressure and air temperature had a negative impact on CR muons, while relative humidity had a positive impact. Although air temperature and relative humidity had small mean values across all time scales, their coefficients varied significantly from month to month and season to season. In addition, the study conducted multivariable correlation analyses for each day, which showed that pressure coefficients had consistently negative mean values, while the temperature and humidity coefficients had varying effects, ranging from positive to negative values. The reasons for the variations in the coefficients are not yet fully understood, but the study proposed several possible terrestrial and extraterrestrial explanations. These findings provide important insights into the complex interactions between the Earth’s atmosphere and cosmic rays, which can contribute to a better understanding of the potential impacts of cosmic rays on the Earth’s climate and environment.

鳍条效应软体采摘机械手建模与试验

针对现有鳍条效应软体手指建模分析方法难以兼顾高精度与小运算量的问题,本研究以课题组设计的苹果采摘软体机械手为对象,在观察软体手指变形的基础上,提出将鳍条效应软体手指等效为串连铰链四杆机构;运用虚功原理推导了给定变形状态下软体手指各处接触力与驱动力矩计算方法;提出用线弹性扭簧模型描述变形恢复力矩,利用改进的粒子群算法求解各级四杆机构扭簧劲度系数;基于有限元模型,结合二次开发建立了给定关节转角和充气压力下驱动力矩的BP神经网络静态模型。搭建试验平台对3个不同大小的仿真苹果在3个不同高度位置下进行抓取力测量试验。试验结果表明,所建立的力学模型计算抓取力相对误差绝对值小于8.6%,与有限元模型精度相当;驱动力矩测量试验结果表明关节神经网络模型计算值与测量值变化趋势相同,相对误差小于12.7%。

Effect of Active–Passive Deformation on the Thrust by the Pectoral Fins of Bionic Manta Robot

Bionic manta underwater vehicles will play an essential role in future oceans and can perform tasks,such as long-duration reconnaissance and exploration,due to their efficient propulsion.The manta wings’deformation is evident during the swimming process.To improve the propulsion performance of the unmanned submersible,the study of the deformation into the bionic pectoral fin is necessary.In this research,we designed and fabricated a flexible bionic pectoral fin,which is based on the Fin Ray®effect with active and passive deformation(APD)capability.The APD fin was actively controlled by two servo motors and could be passively deformed to variable degrees.The APD fin was moved at 0.5 Hz beat frequency,and the propulsive performance was experimentally verified of the bionic pectoral fins equipped with different extents of deformation.These results showed that the pectoral fin with active–passive deformed capabilities could achieve similar natural biological deformation in the wingspan direction.The average thrust(T)under the optimal wingspan deformation is 61.5%higher than the traditional passive deformed pectoral fins.The obtained results shed light on the design and optimization of the bionic pectoral fins to improve the propulsive performance of unmanned underwater vehicles(UUV).

FinFET静电可靠性及新型Fix-base SOI FinFET研究

在鳍型场效应晶体管(SOI FinFET)相关静电防护技术研究基础上,提出了一种新型的体区接触固定型绝缘体上硅鳍型场效应晶体管泄放钳位装置(Fix-base SOI FinFET Clamp)。该新型结构的器件解决了基区接触浮空在静电防护设计时引起的一系列问题,而且对正常的FinFET工艺具有良好的兼容性。通过计算机辅助工艺设计(TCAD)仿真论证了Fix-base SOI FinFET Clamp具有明显效果,详细阐述和讨论了SOI FinFET和Fix-base SOI FinFET Clamp工作状态下的电流和热分布。

FinFET/GAAFET纳电子学与人工智能芯片的新进展

集成电路在后摩尔时代的发展呈现出多模式创新的特点。综述了后摩尔时代中两大创新发展热点,即鳍式场效应晶体管/环绕栅场效应晶体管(FinFET/GAAFET)纳电子学和基于深度学习新算法的人工智能(AI)芯片,并介绍了其发展历程和近两年的最新进展。在FinFET/GAAFET纳电子学领域,综述并分析了当今Si基CMOS集成电路的发展现状,包含Intel的IDM模式、三星和台积电的代工模式3种技术路线,及其覆盖了22、14、10、7和5 nm集成电路纳电子学的5代技术各自的创新特点,以及未来3和2 nm技术节点GAAFET的各种创新结构的前瞻性技术研究。摩尔定律的继续发展将以Si基FinFET和GAAFET的技术发展为主。在AI芯片领域,综述并分析了数字AI芯片和模拟AI芯片的发展现状,包含神经网络云端和边缘计算应用的处理器(图像处理器(GPU)、张量处理器(TPU)和中央处理器(CPU))、加速器和神经网络处理器(NPU)等的计算架构的创新,各种神经网络算法和计算架构结合的创新,以及基于存储中计算新模式的静态随机存取存储器(SRAM)和电阻式随机存取存储器(RARAM)的创新。人工智能芯片的创新发展可弥补后摩尔时代集成电路随晶体管密度上升而计算能力增长缓慢的不足。

FinFET/GAAFET纳电子学与人工智能芯片的新进展(续)

集成电路在后摩尔时代的发展呈现出多模式创新的特点。综述了后摩尔时代中两大创新发展热点,即鳍式场效应晶体管/环绕栅场效应晶体管(FinFET/GAAFET)纳电子学和基于深度学习新算法的人工智能(AI)芯片,并介绍了其发展历程和近两年的最新进展。在FinFET/GAAFET纳电子学领域,综述并分析了当今Si基CMOS集成电路的发展现状,包含Intel的IDM模式、三星和台积电的代工模式3种技术路线,及其覆盖了22、14、10、7和5 nm集成电路纳电子学的5代技术各自的创新特点,以及未来3和2 nm技术节点GAAFET的各种创新结构的前瞻性技术研究。摩尔定律的继续发展将以Si基FinFET和GAAFET的技术发展为主。在AI芯片领域,综述并分析了数字AI芯片和模拟AI芯片的发展现状,包含神经网络云端和边缘计算应用的处理器(图像处理器(GPU)、张量处理器(TPU)和中央处理器(CPU))、加速器和神经网络处理器(NPU)等的计算架构的创新,各种神经网络算法和计算架构结合的创新,以及基于存储中计算新模式的静态随机存取存储器(SRAM)和电阻式随机存取存储器(RARAM)的创新。人工智能芯片的创新发展可弥补后摩尔时代集成电路随晶体管密度上升而计算能力增长缓慢的不足。

FinFET纳电子学与量子芯片的新进展

综述了后摩尔时代中两大发展热点:鳍式场效应晶体管(FinFET)纳电子学和基于量子计算新算法的量子芯片的发展历程和近两年的最新进展。在FinFET纳电子学领域,综述并分析了当今Si基互补金属氧化物半导体(CMOS)集成电路的发展现状,包括FinFET的发展、10 nm和7 nm技术节点的量产、5 nm和3 nm技术节点的环栅场效应晶体管(GAAFET)和2 nm技术节点的负电容场效应晶体管(FET)的前瞻性技术研究以及非Si器件(InGaAs FinFET、WS2和MoS2两种2D材料的FET)的探索性研究。指出继续摩尔定律的发展将以Si基FinFET和GAAFET的技术发展为主。在量子芯片领域,综述并分析了超导、电子自旋、光子、金刚石中的氮空位中心和离子阱等五种量子比特芯片的发展历程,提高相干时间、固态化及多量子比特扩展等的技术突破,以及近几年在量子信息应用的新进展。基于Si基的纳米制造技术和新的量子计算算法的结合正加速量子计算向工程化的进展。

14 nm工艺3D FinFET器件源漏寄生电阻提取与建模

随着CMOS技术进入14 nm技术结点,三维鳍型场效应晶体管（FinFET）源漏寄生电阻的提取随结构的改变而变得更为复杂,高精度寄生电阻的提取对器件建模及电路性能至关重要。根据FinFET器件结构将源漏寄生电阻分割为3部分：由凸起源漏与接触孔所引入的寄生电阻（R_（con））、狭窄鳍到宽源漏区的过渡区寄生电阻（R_（sp））以及源漏与沟道之间的寄生电阻（R_（ext））。考虑电流拥挤效应、电流展宽和栅压控制效应,分别采用平均电流长度法和微元积分法等对R_（con）,R_（sp）和R_（ext）进行建模。最后,将所建模型与TCAD仿真进行对比验证,结果表明所建模型可准确反映源漏寄生电阻的变化,其中过渡区寄生电阻的相对误差小于1%。

FinFET工艺对MOS器件辐射效应的影响

基于商用工艺线生产抗辐射器件具有一定的通用性,需要对商用工艺本征的抗辐射能力进行评估。综述了当前最新绝缘体上硅鳍式场效应晶体管(SOI FinFET)和体硅FinFET工艺的鳍宽和敏感面积对辐射效应的影响。SOI FinFET和体硅FinFET工艺的抗总剂量能力随着鳍宽的变化呈现相反的趋势。SOI FinFET的阈值电压漂移和亚阈值摆幅的退化随着鳍宽减小而减小,而体硅FinFET工艺的漏电流随着鳍宽减小而增大。FinFET工艺由于其自身结构的特点,与相同工艺节点下的平面工艺相比,敏感面积更小,抗单粒子翻转能力更好。从整体趋势来看,随着工艺节点的减小,FinFET工艺的本征抗总剂量能力较为可观,而本征抗单粒子翻转能力较差。