A novel empirical large signal direct current （DC）Ⅰ-Ⅴ model is presented considering the high saturation voltage, high pinch-off voltage, and wide operational range of drain voltage for 4H-SiC MESFETs. A compariso...A novel empirical large signal direct current （DC）Ⅰ-Ⅴ model is presented considering the high saturation voltage, high pinch-off voltage, and wide operational range of drain voltage for 4H-SiC MESFETs. A comparison of the presented model with Statz, Materka, Curtice-Cubic, and recently reported 4H-SiC MESFET large signal Ⅰ-Ⅴ models is made through the Levenberg-Marquardt method for fitting in nonlinear regression. The results show that the new model has the advantages of high accuracy, easily making initial value and robustness over other models. The more accurate results are obtained by the improved channel modulation and saturation voltage coefficient when the device is operated in the sub-threshold and near pinch-off region. In addition the new model can be implemented to CAD tools directly, using for design of 4H-SiC MESFET based RF＆MW circuit, particularly MMIC （microwave monolithic integrate circuit）.展开更多
Since anomalous Hall effect, anomalous magnetoresistance effect and anomalous electric conductivity effect were discovered in n-Ge semiconductor at room temperature, anomalous Hall effect has been successfully explain...Since anomalous Hall effect, anomalous magnetoresistance effect and anomalous electric conductivity effect were discovered in n-Ge semiconductor at room temperature, anomalous Hall effect has been successfully explained with the inversion layers model. In order to investigate further the law that gives rise to anomalous electromagnetic features in n-Ge sample at room temperature, heat treatment to n-Ge sample was performed so as to cause acceptor heat defect compensation in n-Ge semiconductor, which will form an inversion layer展开更多
基金the National Defense Basic Research Program of China(Grant No.51327010101)
文摘A novel empirical large signal direct current （DC）Ⅰ-Ⅴ model is presented considering the high saturation voltage, high pinch-off voltage, and wide operational range of drain voltage for 4H-SiC MESFETs. A comparison of the presented model with Statz, Materka, Curtice-Cubic, and recently reported 4H-SiC MESFET large signal Ⅰ-Ⅴ models is made through the Levenberg-Marquardt method for fitting in nonlinear regression. The results show that the new model has the advantages of high accuracy, easily making initial value and robustness over other models. The more accurate results are obtained by the improved channel modulation and saturation voltage coefficient when the device is operated in the sub-threshold and near pinch-off region. In addition the new model can be implemented to CAD tools directly, using for design of 4H-SiC MESFET based RF＆MW circuit, particularly MMIC （microwave monolithic integrate circuit）.
文摘Since anomalous Hall effect, anomalous magnetoresistance effect and anomalous electric conductivity effect were discovered in n-Ge semiconductor at room temperature, anomalous Hall effect has been successfully explained with the inversion layers model. In order to investigate further the law that gives rise to anomalous electromagnetic features in n-Ge sample at room temperature, heat treatment to n-Ge sample was performed so as to cause acceptor heat defect compensation in n-Ge semiconductor, which will form an inversion layer
