Thermodynamic models for molecular-beam epitaxy（MBE） growth of ternary Ⅲ-Ⅴ semiconductor materials are proposed.These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP,and reported ...Thermodynamic models for molecular-beam epitaxy（MBE） growth of ternary Ⅲ-Ⅴ semiconductor materials are proposed.These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP,and reported GaAsP/GaAs and InAsP/InP in thermodynamic growth.The lattice strain energy △G and thermal decomposition sensitive to growth temperature are demonstrated in the models simultaneously.△G is the function of the alloy composition,which is affected by flux ratio and growth temperature directly.The calculation results reveal that flux ratio and growth temperature mainly influence the growth process.Thermodynamic model of quaternary InGaAsP/GaAs semiconductor material is discussed also.展开更多
Some new results of implant disordering on InP based MQW structures by implanted compositional disordering are presented. The energy shift of PL peak depends on ion species, ion dose, annealing conditions and target t...Some new results of implant disordering on InP based MQW structures by implanted compositional disordering are presented. The energy shift of PL peak depends on ion species, ion dose, annealing conditions and target temperature. The results indicate that the nonactive ions such as F+ and Ne+ are the best candidates for IICD, the ion dose which caused biggest blue shift is around 1 × 10 14 cm-2 for room temperature implantation and 5 × 10 14 cm-2 for an elevated implanted temperature of 200 ℃ and the optimum annealing condition is approximately 750 ℃ for 30 s. AES and TEM characterization suggests that ion bombardment by nonelectrically active ions such as F+, Ne+ induced same amount of layer interdiffusion which results in the band gap blue shift due to the compositional changes.展开更多
基金Projects(06YFJZJC01100,08JCYBJC14800)supported by Applied Basic Study Foundation of Tianjin,ChinaProject(2006AA03Z413)supported by the Hi-tech Research and Development Program of China
文摘Thermodynamic models for molecular-beam epitaxy（MBE） growth of ternary Ⅲ-Ⅴ semiconductor materials are proposed.These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP,and reported GaAsP/GaAs and InAsP/InP in thermodynamic growth.The lattice strain energy △G and thermal decomposition sensitive to growth temperature are demonstrated in the models simultaneously.△G is the function of the alloy composition,which is affected by flux ratio and growth temperature directly.The calculation results reveal that flux ratio and growth temperature mainly influence the growth process.Thermodynamic model of quaternary InGaAsP/GaAs semiconductor material is discussed also.
文摘Some new results of implant disordering on InP based MQW structures by implanted compositional disordering are presented. The energy shift of PL peak depends on ion species, ion dose, annealing conditions and target temperature. The results indicate that the nonactive ions such as F+ and Ne+ are the best candidates for IICD, the ion dose which caused biggest blue shift is around 1 × 10 14 cm-2 for room temperature implantation and 5 × 10 14 cm-2 for an elevated implanted temperature of 200 ℃ and the optimum annealing condition is approximately 750 ℃ for 30 s. AES and TEM characterization suggests that ion bombardment by nonelectrically active ions such as F+, Ne+ induced same amount of layer interdiffusion which results in the band gap blue shift due to the compositional changes.
