Long-term societal prosperity depends on addressing the world’s energy and environmental problems,and photocatalysis has emerged as a viable remedy.Improving the efficiency of photocatalytic processes is fundamentall...Long-term societal prosperity depends on addressing the world’s energy and environmental problems,and photocatalysis has emerged as a viable remedy.Improving the efficiency of photocatalytic processes is fundamentally achieved by optimizing the effective utilization of solar energy and enhancing the efficient separation of photogenerated charges.It has been demonstrated that the fabrication ofⅢ–Ⅴsemiconductor-based photocatalysts is effective in increasing solar light absorption,long-term stability,large-scale production and promoting charge transfer.This focused review explores on the current developments inⅢ–Ⅴsemiconductor materials for solar-powered photocatalytic systems.The review explores on various subjects,including the advancement ofⅢ–Ⅴsemiconductors,photocatalytic mechanisms,and their uses in H2 conversion,CO_(2)reduction,environmental remediation,and photocatalytic oxidation and reduction reactions.In order to design heterostructures,the review delves into basic concepts including solar light absorption and effective charge separation.It also highlights significant advancements in green energy systems for water splitting,emphasizing the significance of establishing eco-friendly systems for CO_(2)reduction and hydrogen production.The main purpose is to produce hydrogen through sustainable and ecologically friendly energy conversion.The review intends to foster the development of greener and more sustainable energy source by encouraging researchers and developers to focus on practical applications and advancements in solar-powered photocatalysis.展开更多
Thermodynamic models for molecular-beam epitaxy（MBE） growth of ternary Ⅲ-Ⅴ semiconductor materials are proposed.These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP,and reported ...Thermodynamic models for molecular-beam epitaxy（MBE） growth of ternary Ⅲ-Ⅴ semiconductor materials are proposed.These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP,and reported GaAsP/GaAs and InAsP/InP in thermodynamic growth.The lattice strain energy △G and thermal decomposition sensitive to growth temperature are demonstrated in the models simultaneously.△G is the function of the alloy composition,which is affected by flux ratio and growth temperature directly.The calculation results reveal that flux ratio and growth temperature mainly influence the growth process.Thermodynamic model of quaternary InGaAsP/GaAs semiconductor material is discussed also.展开更多
The sharp luminescent peaks in Yb and Er-implanted InP,SI-InP,GaAs,and n-GaAs were observed at 77K.The peaks at 1.0 and 1.5μm come from(4f)~2F_(5/2)→~2F_(7/2)of Yb^(3+)and ~4I_(13/2)→~4I_(15/2)of Er^(3+), respectiv...The sharp luminescent peaks in Yb and Er-implanted InP,SI-InP,GaAs,and n-GaAs were observed at 77K.The peaks at 1.0 and 1.5μm come from(4f)~2F_(5/2)→~2F_(7/2)of Yb^(3+)and ~4I_(13/2)→~4I_(15/2)of Er^(3+), respectively.The optimum luminescent intensities can be obtained from Yb-implanted and Er-implanted sam- ples which were annealed at 800 and 750℃,respectively.A ccording to the analyses of PL and the rocking curve of X-ray double crystal diffraction,the best crystal structure of implanted InP layer has been obtained by an- nealing at 850℃.The interaction between Yb^(3+)and Er^(3+)in the SI-InP has been investigated for the first time. The quenching effect of Yb^(3+)and Er^(3+)with each other has been observed when the doses of Yb and Er-im- planted SI-InP are equal.展开更多
We have developed a superior solar-blind ultraviolet （UV） photocathode with an AlxGa1_xrN photocathode （x ～ 0.45） in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Betbr...We have developed a superior solar-blind ultraviolet （UV） photocathode with an AlxGa1_xrN photocathode （x ～ 0.45） in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Betbre being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition （MOCVD）, a reasonable design was made to the photocathode epitaxy structure, focusing on the AlxGa1_xN： Mg active layer, then followed by a comprehen- sive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.展开更多
The coordination nature of a number of substituted sodiumphenoxides to iron （Ⅲ） ion has been studied. The o-nitrosodiumphenoxide was found to have different coordination behaviour from that the sodium salts of sali...The coordination nature of a number of substituted sodiumphenoxides to iron （Ⅲ） ion has been studied. The o-nitrosodiumphenoxide was found to have different coordination behaviour from that the sodium salts of salicylic acid and methylsalicylate showed. The structure of the complexes, the number of the ligands being coordinated to the metal ion, has also been determined by titration, uv-vis spectroscopy, atomic absorption and the flame test. In addition, other sodium phenoxides were also involved in this study for comparison. An electric conductivity study on the resulting complexes was carried out and all complexes were found to be semiconductors.展开更多
基金supported by the Nano&Material Technology Development Program through the National Research Foundation of Korea(NRF)funded by Ministry of Science and ICT(No.2022M3H4A1A04096380)and(No.2022M3H4A3A01082883)。
文摘Long-term societal prosperity depends on addressing the world’s energy and environmental problems,and photocatalysis has emerged as a viable remedy.Improving the efficiency of photocatalytic processes is fundamentally achieved by optimizing the effective utilization of solar energy and enhancing the efficient separation of photogenerated charges.It has been demonstrated that the fabrication ofⅢ–Ⅴsemiconductor-based photocatalysts is effective in increasing solar light absorption,long-term stability,large-scale production and promoting charge transfer.This focused review explores on the current developments inⅢ–Ⅴsemiconductor materials for solar-powered photocatalytic systems.The review explores on various subjects,including the advancement ofⅢ–Ⅴsemiconductors,photocatalytic mechanisms,and their uses in H2 conversion,CO_(2)reduction,environmental remediation,and photocatalytic oxidation and reduction reactions.In order to design heterostructures,the review delves into basic concepts including solar light absorption and effective charge separation.It also highlights significant advancements in green energy systems for water splitting,emphasizing the significance of establishing eco-friendly systems for CO_(2)reduction and hydrogen production.The main purpose is to produce hydrogen through sustainable and ecologically friendly energy conversion.The review intends to foster the development of greener and more sustainable energy source by encouraging researchers and developers to focus on practical applications and advancements in solar-powered photocatalysis.
基金Projects(06YFJZJC01100,08JCYBJC14800)supported by Applied Basic Study Foundation of Tianjin,ChinaProject(2006AA03Z413)supported by the Hi-tech Research and Development Program of China
文摘Thermodynamic models for molecular-beam epitaxy（MBE） growth of ternary Ⅲ-Ⅴ semiconductor materials are proposed.These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP,and reported GaAsP/GaAs and InAsP/InP in thermodynamic growth.The lattice strain energy △G and thermal decomposition sensitive to growth temperature are demonstrated in the models simultaneously.△G is the function of the alloy composition,which is affected by flux ratio and growth temperature directly.The calculation results reveal that flux ratio and growth temperature mainly influence the growth process.Thermodynamic model of quaternary InGaAsP/GaAs semiconductor material is discussed also.
基金Project supported by the National Natural Science Foundation of China
文摘The sharp luminescent peaks in Yb and Er-implanted InP,SI-InP,GaAs,and n-GaAs were observed at 77K.The peaks at 1.0 and 1.5μm come from(4f)~2F_(5/2)→~2F_(7/2)of Yb^(3+)and ~4I_(13/2)→~4I_(15/2)of Er^(3+), respectively.The optimum luminescent intensities can be obtained from Yb-implanted and Er-implanted sam- ples which were annealed at 800 and 750℃,respectively.A ccording to the analyses of PL and the rocking curve of X-ray double crystal diffraction,the best crystal structure of implanted InP layer has been obtained by an- nealing at 850℃.The interaction between Yb^(3+)and Er^(3+)in the SI-InP has been investigated for the first time. The quenching effect of Yb^(3+)and Er^(3+)with each other has been observed when the doses of Yb and Er-im- planted SI-InP are equal.
基金supported by the National Natural Science Foundation of China(Grant No.10974015)the National Defense Pre-Research Foundation of China(Grant No.9140C380502150C38002)
文摘We have developed a superior solar-blind ultraviolet （UV） photocathode with an AlxGa1_xrN photocathode （x ～ 0.45） in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Betbre being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition （MOCVD）, a reasonable design was made to the photocathode epitaxy structure, focusing on the AlxGa1_xN： Mg active layer, then followed by a comprehen- sive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.
文摘The coordination nature of a number of substituted sodiumphenoxides to iron （Ⅲ） ion has been studied. The o-nitrosodiumphenoxide was found to have different coordination behaviour from that the sodium salts of salicylic acid and methylsalicylate showed. The structure of the complexes, the number of the ligands being coordinated to the metal ion, has also been determined by titration, uv-vis spectroscopy, atomic absorption and the flame test. In addition, other sodium phenoxides were also involved in this study for comparison. An electric conductivity study on the resulting complexes was carried out and all complexes were found to be semiconductors.
