The induces defects and especially the EL2 defect in 10 MeV electron irradiated undoped semi-insulating(SI) LEC GaAs samples were investigated by using optical transient current spectroscopy (OTCS)technique.The resul...The induces defects and especially the EL2 defect in 10 MeV electron irradiated undoped semi-insulating(SI) LEC GaAs samples were investigated by using optical transient current spectroscopy (OTCS)technique.The results indicate that the density of EL2 defect of irradiated GaAs decreases and the density of EL6 defect in-creases at lower fluence levels. At higher fluences, we observe an increase in density of the EL2 level, howev-er,the density of the EL6 is decreased. It is suggested that on lower fluences, 10 MeV electron irradiation causes the dissociation of the EL2 defect, and may be used to decrease the main donor level EL2 in SI-GaAs.展开更多
High temperature superconductor research is presently concentrated upon the flux pinning properties of the Abrikosov lattice of the mixed-mode superconducting phase. The temperature thermal fluctuations, current and m...High temperature superconductor research is presently concentrated upon the flux pinning properties of the Abrikosov lattice of the mixed-mode superconducting phase. The temperature thermal fluctuations, current and magnetic field unpin the flux vortices and so cause electromagnetic resistivity in high temperature superconductors. Materials with higher vortex pinning exhibit less resistivity and are more attractive for industrial uses. In the present article, we measured and correlated the pinning flux energy barrier, determined by AC magnetic measurements, and transmission electron microscopy measurements to the critical current Jc in Yttrium- and Silver-doped MgB2 superconductors. The energy of the flux vortex was evaluated as a function of the magnetic field. The energy barrier curves suggest an optimal doping level to occur in doped materials. This result only depends on the optimal size and distribution of precipitates, and not on their chemical composition. The energy barriers have been compared with that of undoped MgB2 in literature.展开更多
文摘The induces defects and especially the EL2 defect in 10 MeV electron irradiated undoped semi-insulating(SI) LEC GaAs samples were investigated by using optical transient current spectroscopy (OTCS)technique.The results indicate that the density of EL2 defect of irradiated GaAs decreases and the density of EL6 defect in-creases at lower fluence levels. At higher fluences, we observe an increase in density of the EL2 level, howev-er,the density of the EL6 is decreased. It is suggested that on lower fluences, 10 MeV electron irradiation causes the dissociation of the EL2 defect, and may be used to decrease the main donor level EL2 in SI-GaAs.
文摘High temperature superconductor research is presently concentrated upon the flux pinning properties of the Abrikosov lattice of the mixed-mode superconducting phase. The temperature thermal fluctuations, current and magnetic field unpin the flux vortices and so cause electromagnetic resistivity in high temperature superconductors. Materials with higher vortex pinning exhibit less resistivity and are more attractive for industrial uses. In the present article, we measured and correlated the pinning flux energy barrier, determined by AC magnetic measurements, and transmission electron microscopy measurements to the critical current Jc in Yttrium- and Silver-doped MgB2 superconductors. The energy of the flux vortex was evaluated as a function of the magnetic field. The energy barrier curves suggest an optimal doping level to occur in doped materials. This result only depends on the optimal size and distribution of precipitates, and not on their chemical composition. The energy barriers have been compared with that of undoped MgB2 in literature.
