VAlN coating is of particular interest for dry cutting applications owing to its low-friction and excellent abrasiveness.Nano-multilayer structure is designed to tailor the properties of VAlN coating.In this work,a se...VAlN coating is of particular interest for dry cutting applications owing to its low-friction and excellent abrasiveness.Nano-multilayer structure is designed to tailor the properties of VAlN coating.In this work,a series of VAlN/Si_(3)N_(4) nano-multilayer coatings with varied Si_(3)N_(4) layer thicknesses were prepared by reactive sputtering method.The microstructure and mechanical properties of the coatings were both investigated.It is revealed that Si_(3)N_(4) with a shallow thickness(~0.4 nm)was crystallized and grown coherently with VAlN,showing a remarkable increase in hardness compared to VAlN monolayer coating.The hardness of coherently VAlN/Si_(3)N_(4) nano-multilayer coatings reached to 48.7 GPa.With further increase of Si_(3)N_(4) layer thickness,the coherent growth of nano-multilayers was terminated,showing amorphous structure formed in nano-multilayers and the hardness was declined.On the other hand,when Si_(3)N_(4) layer thickness was 0.4 nm,the friction coefficient of VAlN/Si_(3)N_(4) nano-multilayer coating was almost equal to that of VAlN monolayer coating,which was attributed to the crystallization of Si_(3)N_(4) and the produced coherent interfaces between VAlN and Si_(3)N_(4) for the hardening effect of nano-multilayer coatings.Upon further increase of Si_(3)N_(4) layer thickness,pronounced improvement of friction coefficient in VAlN/Si_(3)N_(4) nano-multilayer coating was observed.展开更多
To improve the oxidation resistance and corrosion resistance of Zr-4 alloy, titanium nitride (TIN) coatings were prepared on the Zr-4 alloy with a TiN ceramic target with different ratios of N2. Microstructure and h...To improve the oxidation resistance and corrosion resistance of Zr-4 alloy, titanium nitride (TIN) coatings were prepared on the Zr-4 alloy with a TiN ceramic target with different ratios of N2. Microstructure and high-temperature properties of the TiN coated samples were studied by scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), X-ray diffraction meter (XRD), X-ray photoelectron spectroscopy (XPS), heat treatment furnace and autoclaves, respectively. The x value of the TiN coatings (TiN) ranges from 0.96 to 1.33. After the introduction of N2, TiN coating exhibits a weak (200) plane and a preferred (111) orientation. The coating prepared with an N2 flow ratio of 15% shows an optimal oxidation resistance in the atmospheric environment at 800 ℃. In either 1 200 ℃ steam environment for one hour, or deionized water at 360 ℃ and a pressure of 18.6 Mpa for 16 d, the opitimized TiN coated samples have no delamination or spallation; and the gains in the masses of samples are much smaller than Zr-4 alloy. These results demonstrate the effectiveness of the optimized TiN coating as the protective coating on the Zr-4 alloy under extreme conditons.展开更多
Lock-in amplifiers are used to detect and measure very small alternating current(AC)signals down to the range of nVs.Accurate measurements can be made even when the small signals are buried by noise thousands of times...Lock-in amplifiers are used to detect and measure very small alternating current(AC)signals down to the range of nVs.Accurate measurements can be made even when the small signals are buried by noise thousands of times larger.With the digital signal processing(DSP)technology involved in modern instrumentation,a lock-in amplifier is more versatile in sensing and recovering small signals.Combining the virtual instrumentation technology,we reorganize the functional blocks of a programmable lock-in amplifier and build it as a virtual spectrum analyzer,virtual impedance meter,virtual network analyzer,virtual semiconductor parameter analyzer,signal generator,etc.A 4 layer model is used to implement these virtual instruments.The same virtual instrument can also be implemented on a general purpose FPGA developing board.展开更多
Regulating charge transfer to achieve specific transfer path can improve electron utilization and complete efficient photoreduction of CO_(2).Here,we fabricated a S-scheme heterojunction of CN/Fe-MOF by an in-situ ass...Regulating charge transfer to achieve specific transfer path can improve electron utilization and complete efficient photoreduction of CO_(2).Here,we fabricated a S-scheme heterojunction of CN/Fe-MOF by an in-situ assembly strategy.The S-scheme charge transfer mechanism was confirmed by band structure,electron spin resonance(ESR)and work function(Φ)analysis.On the one hand,the response of Fe-MOF in the visible region improved the utilization of light energy,thus increasing the ability of CN/Fe-MOF to generate charge carriers.On the other hand,CN,as the active site,not only had strong adsorption capacity for CO_(2),but also retained photogenerated electrons with high reduction capacity because of S-scheme charge transfer mechanism.Hence,in the absence of any sacrificial agent and cocatalyst,the optimized 50CN/Fe-MOF obtained the highest CO yield(19.17μmol g^(–1))under UV-Vis irradiation,which was almost 10 times higher than that of CN.In situ Fourier transform infrared spectra not only revealed that the photoreduction of CO_(2) occurred at the CN,but also demonstrated that the S-scheme charge transfer mechanism enabled 50CN/Fe-MOF to have a stronger ability to generate HCOO–than CN.展开更多
基金Project(51201187)supported by the National Natural Science Foundation of China。
文摘VAlN coating is of particular interest for dry cutting applications owing to its low-friction and excellent abrasiveness.Nano-multilayer structure is designed to tailor the properties of VAlN coating.In this work,a series of VAlN/Si_(3)N_(4) nano-multilayer coatings with varied Si_(3)N_(4) layer thicknesses were prepared by reactive sputtering method.The microstructure and mechanical properties of the coatings were both investigated.It is revealed that Si_(3)N_(4) with a shallow thickness(~0.4 nm)was crystallized and grown coherently with VAlN,showing a remarkable increase in hardness compared to VAlN monolayer coating.The hardness of coherently VAlN/Si_(3)N_(4) nano-multilayer coatings reached to 48.7 GPa.With further increase of Si_(3)N_(4) layer thickness,the coherent growth of nano-multilayers was terminated,showing amorphous structure formed in nano-multilayers and the hardness was declined.On the other hand,when Si_(3)N_(4) layer thickness was 0.4 nm,the friction coefficient of VAlN/Si_(3)N_(4) nano-multilayer coating was almost equal to that of VAlN monolayer coating,which was attributed to the crystallization of Si_(3)N_(4) and the produced coherent interfaces between VAlN and Si_(3)N_(4) for the hardening effect of nano-multilayer coatings.Upon further increase of Si_(3)N_(4) layer thickness,pronounced improvement of friction coefficient in VAlN/Si_(3)N_(4) nano-multilayer coating was observed.
基金Funded by the National Science and Technology Major Project of the Ministry of Science and Technology of China(2015ZX06004001-002)the Postgraduate Research and Innovation Project of the University of South China(2017XCX11)
文摘To improve the oxidation resistance and corrosion resistance of Zr-4 alloy, titanium nitride (TIN) coatings were prepared on the Zr-4 alloy with a TiN ceramic target with different ratios of N2. Microstructure and high-temperature properties of the TiN coated samples were studied by scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), X-ray diffraction meter (XRD), X-ray photoelectron spectroscopy (XPS), heat treatment furnace and autoclaves, respectively. The x value of the TiN coatings (TiN) ranges from 0.96 to 1.33. After the introduction of N2, TiN coating exhibits a weak (200) plane and a preferred (111) orientation. The coating prepared with an N2 flow ratio of 15% shows an optimal oxidation resistance in the atmospheric environment at 800 ℃. In either 1 200 ℃ steam environment for one hour, or deionized water at 360 ℃ and a pressure of 18.6 Mpa for 16 d, the opitimized TiN coated samples have no delamination or spallation; and the gains in the masses of samples are much smaller than Zr-4 alloy. These results demonstrate the effectiveness of the optimized TiN coating as the protective coating on the Zr-4 alloy under extreme conditons.
文摘Lock-in amplifiers are used to detect and measure very small alternating current(AC)signals down to the range of nVs.Accurate measurements can be made even when the small signals are buried by noise thousands of times larger.With the digital signal processing(DSP)technology involved in modern instrumentation,a lock-in amplifier is more versatile in sensing and recovering small signals.Combining the virtual instrumentation technology,we reorganize the functional blocks of a programmable lock-in amplifier and build it as a virtual spectrum analyzer,virtual impedance meter,virtual network analyzer,virtual semiconductor parameter analyzer,signal generator,etc.A 4 layer model is used to implement these virtual instruments.The same virtual instrument can also be implemented on a general purpose FPGA developing board.
文摘Regulating charge transfer to achieve specific transfer path can improve electron utilization and complete efficient photoreduction of CO_(2).Here,we fabricated a S-scheme heterojunction of CN/Fe-MOF by an in-situ assembly strategy.The S-scheme charge transfer mechanism was confirmed by band structure,electron spin resonance(ESR)and work function(Φ)analysis.On the one hand,the response of Fe-MOF in the visible region improved the utilization of light energy,thus increasing the ability of CN/Fe-MOF to generate charge carriers.On the other hand,CN,as the active site,not only had strong adsorption capacity for CO_(2),but also retained photogenerated electrons with high reduction capacity because of S-scheme charge transfer mechanism.Hence,in the absence of any sacrificial agent and cocatalyst,the optimized 50CN/Fe-MOF obtained the highest CO yield(19.17μmol g^(–1))under UV-Vis irradiation,which was almost 10 times higher than that of CN.In situ Fourier transform infrared spectra not only revealed that the photoreduction of CO_(2) occurred at the CN,but also demonstrated that the S-scheme charge transfer mechanism enabled 50CN/Fe-MOF to have a stronger ability to generate HCOO–than CN.