《管子》犯罪预防思想浅析

《管子》一书,关于犯罪预防的理论比较丰富。《管子》认为,应该从多方面预防犯罪,经济上,应发展生产,节约消费;政治上,应制定合理的政策;教育上,应对百姓加强道德教育;法律上,应以刑罚作保障。

《管子》韵语及成书年代初探

从语言的角度来讨论《管子》的年代是一个尚未全面开展的工作。要为《管子》断代,必须从词汇、语法和语音三个方面对《管子》的语言现象进行全面和透彻的描写。这篇论文是一个初步的努力,希望透过《管子》里的韵文,对这本书的语音现象进行描述,并总结其特点,进而对《管子》的成书年代做出提示。

陈奂弟子丁士涵《管子》著述新发现——论上图、南图所藏三部《管子》校诂残稿

清代学者丁士涵一生撰成三部《管子》研究专著。上海图书馆现藏有丁氏《〈管子〉案》残稿上部,潘承弼、郭沫若认为这是历经太平兵燹后丁氏仅存的《管子》著述。南京图书馆现藏有几乎不为学者知晓的署名丁士涵的两部《管子》研究残稿:《〈管子〉校本》和《〈管子〉校议》。经作者考证,《〈管子〉校本》是丁氏的《〈管子〉案》,书名被误题,它是上图《〈管子〉案》残稿的下部;《〈管子〉校议》是上图丁氏《〈管子〉案》残稿自叙中提到的《〈管子〉注》,其书名亦被误题。《〈管子〉注》大部分内容完好,而《〈管子〉案》上、下部残稿合起来几为全本。《〈管子〉案》《〈管子〉注》均为校诂之作,其撰著时间一前一后,相互之间是"案"与"补案"的关系。

对《管子·水地》篇与郭店简《太一生水》“水生说”比较的补充意见

传世的《管子·水地》和出土的郭店简《太一生水》是有关"水生说"的两篇重要文献,论者甚众。从"‘水’的地位"和"宇宙生成模式"等方面比较考察,可以看出二文思想差异颇大,应该不存在彼此影响的关系。《管子·水地》的写成可能在稷下道家精气说盛行之后,总体上看要晚于《太一生水》。

《管子》与韩非人性思想比较

韩非是战国时期法家思想的代表,其人性理论在极大程度上继承并发扬了早期法家,特别是《管子》的人性思想,但《管子》人性思想和韩非的人性思想也有显著区别,并且都从自己的人性理论出发,提出了自己的治国之策,研究《管子》和韩非人性理论及其治国之策,对于我国的法治建设和国家治理应该说具有比较重要的现实意义。

《管子》的女性道德教化思想论析

《管子》基于“趋利避害”的人性论及女性所承担的社会角色,提出男女不杂、忠贞、赡养父母、教育子女、勤奋劳作的女性道德教化内容,认为女性道德教化的方法主要包括因势利导、顺应人情,上行下效、榜样示范,陶冶感化、循序渐进,人啬夫任教、以俗化民。《管子》对女性进行道德教化,主要以所在家庭和社会环境为依托,采用“训”的方法。相较于后世封建社会中的女性,春秋战国时期的齐国对女性的道德教化还没有完全限制女性的道德自由。

《管子》“是”字用法探析

《管子》成书的特殊性奠定了它在先秦典籍中的重要地位,分析《管子》中“是”字的用法,可以窥探“是”在先秦时期的大体使用情况。“是”在《管子》中分布广泛,运用灵活,全书共出现507例,按照词性及具体用法,可以划分为9类。研究显示,“是”与介词构成介宾结构,作复合词,是它在《管子》中的主要用法;指示代词是它在《管子》中的重要用法;没有发现“是”作判断动词的用例。

Research on the correlation between the dual diffusion behavior of zinc in InGaAs/InP single-photon avalanche photodiodes and device performance

The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.

Nitrogen⁃doped 3D graphene⁃carbon nanotube network for efficient lithium storage

A 3D nitrogen⁃doped graphene/multi⁃walled carbon nanotube(CS⁃GO⁃NCNT)crosslinked network mate⁃rial was successfully synthesized utilizing chitosan and melamine as carbon and nitrogen sources,concomitant with the incorporation of multi⁃wall carbon nanotubes and employing freeze drying technology.The material amalgamates the merits of 1D/2D hybrid carbon materials,wherein 1D carbon nanotubes confer robustness and expedited elec⁃tron transport pathways,while 2D graphene sheets facilitate rapid ion migration.Furthermore,the introduction of nitrogen heteroatoms serves to furnish additional active sites for lithium storage.When served as an anode material for lithium⁃ion batteries,the CS⁃GO⁃NCNT electrode delivered a reversible capacity surpassing 500 mAh·g^(-1),mark⁃edly outperforming commercial graphite anodes.Even after 300 cycles at a high current density of 1 A·g^(-1),it remained a reversible capacity of up to 268 mAh·g^(-1).

Effect of acetyl L-carnitine on human retinal pigment epithelium-19 cells in hypoxic conditions

AIM:To investigate the effect of acetyl-L-carnitine(ALCAR)on cell viability,morphological integrity,and vascular endothelial growth factor(VEGF)expression in human retinal pigment epithelium(ARPE-19)cells using a hypoxic model.METHODS:In the first set of experiments,the optimal CoCl_(2) dose was determined by exposing ARPE-19 cell cultures to different concentrations.To evaluate the effect of ALCAR on cell viability,five groups of ARPE-19 cell culture were established that included a control group,a sham group(200μM CoCl_(2)),and groups that received 1,10 and 100 mM doses of ALCAR combined with 200μM CoCl_(2),respectively.The cell viability was measured by MTT assay.The morphological characteristics of cells were observed by an inverted phase contrast microscope.The levels of VEGF and HIF-1α secretion by ARPE-19 cells were detected by enzyme linked immunosorbent assay(ELISA)assay.RESULTS:ARPE-19 cells were exposed to different doses of CoCl_(2) in order to create a hypoxia model.Nevertheless,when exposed to a concentration of 200μM CoCl_(2),a notable decrease in viability to 83% was noted.ALCAR was found to increase the cell viability at 1 mM and 10 mM concentrations,while the highest concentration(100 mM)did not have an added effect.The cell viability was found to be significantly higher in the groups treated with a concentration of 1 mM and 10 mM ALCAR compared to the Sham group(P=0.041,P=0.019,respectively).The cell viability and morphology remained unaffected by the greatest dose of ALCAR(100 mM).The administration of 10 mM ALCAR demonstrated a statistically significant reduction in the levels of VEGF and HIF-1α compared with the Sham group(P=0.013,P=0.033,respectively).CONCLUSION:The findings from the current study indicate that ALCAR could represent a viable therapeutic option with the potential to open up novel treatment pathways for retinal diseases,particular relevance for age-related macular degeneration(AMD).However,to fully elucidate ALCAR’s application potential in retinal diseases,additional investigation is necessary to clearly define the exact mechanisms involved.

Effect of electron beam irradiation on multi-walled carbon nanotubes

Multi-walled carbon nanotubes （MWCNTs） were irradiated with focused electron beams in a transmission electron microscope at room temperature. The results showed that carbon nanotubes had no obvious structural damages but only shell bending under 100 keV electron beam irradiation. However, when the electron energy increased to 200 keV, the nanotubes were damaged and amorphization, pits and gaps were detected. Furthermore, generating of carbon onions and welding between two MWCNTs occurred under 200 keV electron irradiation. It was easy to destroy the MWCNTs as the electron beams exceeded the displacement threshold energy that was calculated to be 83-110 keV. Conversely, the energy of electron beams below the threshold energy was not able to damage the tubes. The damage mechanism is sputtering and atom displacement.

Ultrastructural Studies on the Sieve Elements in Root Protophleom of Arabidopsis thaliana

The ultrastructures of the root protophleom sieve element at different developmental stages of Arabidopsis thaliana L. were investigated using the technique of high pressure freezing and freeze substitution fixing specimen. The results show that in the development of the sieve elements, the nuclei undergo typical characteristics of the programmed cell death (PCD): the nuclear envelopes form emboli, the chromatin condenses and aggregates towards the nuclear envelope, which degrades and fully disappears later. Before the nucleus degradation, neither the nuclear envelope undulation, nucleus lobe nor marked dilation (or bleb) of perinuclear space could be observed. In the cytoplasm of the mature sieve element, there are starch-like granules separately sheathed with a layer of membrane and usually with mitochondria around. These gnanules seem to provide substrates to mitochondria in their function. Small vacuoles originate from endoplasmic reticulum (ER), and no bigger vacuole was found.

Microtubule Structure and Male Sterility in a Gene-Cytoplasmic Male Sterile Line of Rice, Zhen Shan 97A

Histological changes that occur during microsporogenesis are documented in a gene-cytoplasmic male sterile rice ( Oryza saliva L.) line, Zhen Shan 97A, its maintainer line, Zhen Shan 97B, and the restorer line, Ce64 of a Mine hybrid rice production system. In the restorer line, Ce64, the developing microsporocytes have dense cytoplasm and a distinct set of circumferential microtubules around the nucleus. Successive cytokinesis results in the formation of tetrads. The microtubules within the cells of tetrads and microspores radiate from the surface of the nucleus towards the outer edge of the cytoplasm. Subsequent pollen development is normal. During the course of microspore formation tubulin speckles can be found in the cytoplasm. The general pattern of development and microtubule organization in the maintainer lined Zhen Shan 97B, is similar to Ce64, except that a few more tubulin speckles appear during microspore formation. In the case of the mate sterile line, Zhen Shan 97A, a number of abnormalities can be discerned during early microsporogenesis. These include vacuoles forming within the developing microsporocyte and faintly stained microtubules with no defined distribution pattern. Prominent tubulin speckles are common within the cytoplasm. For those microsporocytes that undergo meiosis, no defined organizational patterns of microtubules can be found within the tetrad. All microspores abort soon after. Abnormalities and defects in microtubule organization observed in Zhen Shan 97A showed that complex interactions between the cytoplasm and the nucleus began at very early stage of microsporocyte development.

A New Process for Improving Performance of VCSELs

A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers （VCSELs）. The VCSELs with open-annulus-distributed holes have a light output power 1.34 times higher than those with ring trenches. The 14μm-aperture devices have a light output power higher than 10mW and have a maximum of 12.48mW at 29.6mA. In addition,open-annulus-distributed holes offer bridges for current injection,so the connecting Ti-Au metal between the ohmic contact and bonding pad does not have to cross the ring trench, and it therefore would not cause the connecting metal to be broken. These VCSELs also show high-temperature operation capabilities,and they have a maximum output power of 8mW even at an operation temperature of up to 60℃.

RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content

A Si doped AlGaN/GaN HEMT structure with high Al content (x=43%) in the barrier layer is grown on sapphire substrate by RF-MBE.The structural and electrical properties of the heterostructure are investigated by the triple axis X-ray diffraction and Van der Pauw-Hall measurement,respectively.The observed prominent Bragg peaks of the GaN and AlGaN and the Hall results show that the structure is of high quality with smooth interface.The high 2DEG mobility in excess of 1260cm2/(V·s) is achieved with an electron density of 1.429×10 13cm -2 at 297K,corresponding to a sheet-density-mobility product of 1.8×10 16V -1·s -1.Devices based on the structure are fabricated and characterized.Better DC characteristics,maximum drain current of 1.0A/mm and extrinsic transconductance of 218mS/mm are obtained when compared with HEMTs fabricated using structures with lower Al mole fraction in the AlGaN barrier layer.The results suggest that the high Al content in the AlGaN barrier layer is promising in improving material electrical properties and device performance.

Optimal pricing and production decisions in a supply chain with e-marketplace

The concept of the e-marketplace is introduced.Considering a supply chain with a single manufacturer who sells a single item in an e-marketplace,an analytical model for the use of the e-marketplace in a supply chain is provided.Assuming the market demand is stochastic and price-dependent,the conditions under which the manufacturer and the e-marketplace owner share the market in equilibrium is developed.The existence and uniqueness of the optimal selling price,quantity and transaction percentage are proved.An integrated supply chain is put forward,and then the efficiency of supply chain coordination is studied by comparing the integrated supply chain with the decentralized supply chain.To gain further insights on the theoretical models,extensive simulations are then carried out.

释“轻重”——兼论“轻重论”产生的时代

"轻重"作为我国经济史领域中的一个词,历来解释不大明确。最新的也是最为完备的解释是王利器先生的《盐铁论校注》中对于"轻重"的注解。本论文以《管子》"轻重论"的内容为根据,总结出这个词的意义,表述如下:"轻重"是产生于西汉前期的一种经济思想。主要内容是:国家(政府)强力介入经济活动,主要以经济手段平抑物价、控制粮食和货币、发放农贷,国家(政府)垄断山海资源,专卖盐铁。以为国君赚取最大限度的财利、便于统治人民为目的。同时,也不排斥对人民有利,和对人民的榨取,但所取形式为明予暗夺,以笼络人心。

Fabrication and Characteristics of a Si-Based Single Electron Transistor

Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxidation and etching off the oxide layer,a one dimensional Si quantum wire can be converted into several quantum dots inside quantum wire in connection with the source and drain regions.The differential conductance (d I ds /d V ds ) oscillations and the Coulomb staircases in the source drain current ( I ds ) are shown clearly dependent on the source drain voltage at 5 3K.The I ds V gs (gate voltage) oscillations are observed from the I ds V gs characteristics as a function of V gs at different temperatures and various values of V ds .For a SET whose total capacitance is about 9 16aF,the I ds V gs oscillations can be observed at 77K.

Ti/4H-SiC Schottky Barrier Diodes with Field Plate and B^+ Implantation Edge Termination Technology

This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes （SBDs）. The ideality factor n = 1.08 and effective Schottky barrier heightφ= 1.05eV of the SBDs were measured with the method of forward current density-voltage （J-V）. A low reverse leakage current below 5.96 ×10^-3A/cm^2 at a bias voltage of - 1. 1kV was obtained. By using B^＋ implantation,an amorphous layer as the edge termination was formed. We used the PECVD SiO2 as the field plate dielectric. The SBDs have an on-state current density of 430A/cm^2 at a forward voltage drop of about 4V. The specific on-resistance Ro, was found to be 6. 77mΩ2 · cm^2 .

Structure design for electron beam controlling in microwave tube with carbon nanotube cathode

To control the electron beam emitted from the carbon nanotube （CNT） cathode, four different electron chunnels are designed. A common basic structure used in the simulation is an insulating chunnel. When primary electrons hit the surface of the chunnel, secondary electrons are generated, which make the electron distribution at the exit hole of the chunnel more uniform. By analyzing and comparing the state of electrons emitted from the exit of chunnel among the four structures, an optimal structure is obtained. In the optimized structure, the electron distribution at the exit hole of the chunnel is more uniform and the electron beam is rather slim. Furthermore, by adding a magnetic field along the slow wave line, the electron beam can be constrained. In the optimized structure, a very small magnetic field is needed to make most of electrons pass through the slow wave line.