礼与杜恕《体论》

杜恕《体论》以礼为万物的法式和规矩,并赋予礼以道德价值和政治价值的权威,进而论述了礼对协调政治关系和伦理关系的功用。杜恕的礼治主张切中曹魏名法之治的流弊,是魏晋之际治国方略由“以刑为先”向“以礼为首”转化期间的产物。《体论》在哲学论证上的不足,又为魏晋玄学“名教自然之辨”、“体用之辩”留下了发展空间。

从《体源钞》看中国典籍与日本乐书的关系

日本音乐文化是在中国文化的影响下发展的。其中一个重要表现是:在音乐书写方面,日本乐书对中国典籍有很高程度的依赖。《体源钞》作为日本三大乐书之一,具有代表意义。通过对《体源钞》中的引文进行版本对校和诸书他校,可以发现,很多中国乐书仅存于日本,具有辑佚学价值;日本乐书对之采用了直引、转引、略引、译引、编引等引用方式;中日古乐书有一种结构上的对应,意味着东亚汉文音乐文献是一个整体,拥有相互依存的关系。另外,《体源钞》对中国典籍的征引方式表明:日本乐书特别重视对中国类书、政书等综合性图书加以利用;在日本影响较大的中国乐书是《律书乐图》和《乐书要录》;由于日本乐书往往在某一家族中秘传,所以具有音乐口述史的性质,其中汉籍引文旁亦多有训点符号,或假名符号。最后一点又说明,汉籍在日本遇到了不同程度的消化。

《体源钞》与《乐家录》中的乐器记载比较研究

《体源钞》与《乐家录》是具有较高史料价值的两部日本古代乐书,其中乐器记载意义突出,本文分别从两个方面对其进行比较研究。首先是根据《体源钞》与《乐家录》的撰写背景的比较和所载乐器使用情况的梳理,来说明两部乐书中乐器记载结构和内容的不同及其原因。其次是通过对《体源钞》与《乐家录》中各类乐器具体内容的比较,来归纳其特点,并分析其中的乐器流变问题。

论在“五位一体”总体布局中工会的定位、面临的挑战及作用

"五位一体"是党中央对中国特色社会主义事业作出的新的全局性规划,体现了党对社会主义建设规律的全新把握。工会是联系党和职工群众桥梁和纽带,代表和维护职工合法权益,同时也承担着动员和组织职工积极参加改革和建设,努力推动我国经济、政治、文化、社会、生态文明各项事业不断向前发展的重要任务。新时期党和国家高度重视、相关法律法规不断出台、职工素质普遍提升及对工会的认同,都给工会发挥作用创造了机遇。但同时又面临着劳动关系日趋多样化和复杂化、劳动者利益诉求多元、思想状况日益复杂、价值取向多元和利益表达渠道不畅通等方面的挑战和压力。面对党、政府和职工对工会寄予的深切厚望,工会组织应从自身实际出发,从加强组织建设、提高工会干部整体素质、创新工会工作方式等方面找准定位,充分发挥自身优势,努力在新时期经济建设、政治建设、文化建设、社会建设以及生态文明建中争取更大的作为。

《体演〈春草〉:高级汉语视听说教程》出版

《体演〈春草〉:高级汉语视听说教程》是由外研社与美国俄亥俄州立大学外语出版社联合出版的高级汉语学习材料。该书基于中国作家裘山山的长篇小说《春草》及同名三十三集电视连续剧编写而成。通过观看电视剧和阅读原著小说的有效结合,学习者可以切实提高口语及书面交流能力。该书具有以下几个特点。

维吾尔医古籍《体比充》及其医学价值

维吾尔医古籍《体比充》（医学大全）是被18世纪生活在和田的维吾尔医学家胡佳热依木阿訇用察合台维吾尔语编写的著作。该著作介绍维吾尔医中多发病的认识、病因、症状、诊断方法以及治疗原则，以及使用生药与成药治疗方法，疾病的禁忌，部分成药的组成等内容。本著作不仅研究古代维吾尔医学有重要价值，而在当代维吾尔医·临床治疗上有重要的利用价值。

《本草纲目》中唇形科药物基源考证

目的:通过对《本草纲目》的药物基源的研究考证,明确李时珍当时所记载的药物在现代植物分类中的地位,为提供临床用药的准确性和进一步开发新药提高理论依据。方法:针对《本草纲目》原文和相关资料以及植物分类学方法进行分析研究。结果:从全部植物基源药物中,考证出属于唇形科18种,并简述其生活环境及分布情况。结论:《本草纲目》中唇形科基源药物主要收载于卷十四芳草类中,表明李时珍的药物分类法已包含有植物亲缘关系分类法的雏形,可作为药源开发的线索与依据。

Thesaurus-based approach for building domain ontology with a case study of military aircraft prototype ontology construction

To alleviate the amount of work involved in constructing a domain ontology, starting with the base of an existing terminological-rich thesaurus is better than starting from scratch. With a case study of reengineering the Defense Science and Technology Thesaurus into a prototype military aircraft ontology, a four-phase thesaurus-based methodology is introduced and investigated, which consists of identifying the application purpose, overall design, designing in detail and evaluation. Designing in detail is the core step, converting the terms and semantic relationships of the thesaurus into an ontology and supplementing richer semantic relationships. The resulting prototype ontology includes 87 concepts and 34 relationships, and can be extended and scaled up to a full-fledged domain ontology in the future. Eight universal genres of relationships of this ontology are preliminarily summarized and analyzed, including equivalent relationships, approximate relationships, generic/abstract relationships, part/whole relationships, cause/effect relationships, entity/location relationships etc., and the normalization of semantic relationships is critical to the merging and reusing of follow-up multiple ontologies.

The Bipolar Theory of the Field-Effect Transistor:X.The Fundamental Physics and Theory(All Device Structures)

This paper describes the foundation underlying the device physics and theory of the semiconductor field effect transistor which is applicable to any devices with two carrier species in an electric field. The importance of the boundary conditions on the device current-voltage characteristics is discussed. An illustration is given of the transfer DCIV characteristics computed for two boundary conditions,one on electrical potential,giving much higher drift-limited parabolic current through the intrinsic transistor, and the other on the electrochemical potentials, giving much lower injection-over-thebarrier diffusion-limited current with ideal 60mV per decade exponential subthreshold roll-off, simulating electron and hole contacts. The two-MOS-gates on thin pure-body silicon field-effect transistor is used as examples

Hydrolysis Mechanism of the NAMI-A-type Antitumor Complex （HL）[trans-RuCl4L（dmso-S）] （L=1-methyl-l,2,4-triazole）

The hydrolysis process of Ru（III） complex （HL）[trans-RuC14L（dmso-S）] （L=l-methyl-l,2,4- triazole and dmso-S=S-dimethyl sulfoxide） （1）, a potential antitumor complex similar to the well-known antitumor agent （Him）[trans-RuC14 （dmso-S）（im）] （NAMI-A, im=imidazole）, was investigated using density functional theory combined with the conductor-like polarizable continuum model approach. Tile structural characteristics and the detailed energy profiles for the hydrolysis processes of this complex were obtained. For the first hydrolysis step, complex 1 has slightly higher barrier energies than the reported anticancer drug NAMI-A, and the result is in accordance with the experimental evidence indicating larger half-life for complex 1. For the second hydrolysis step, the formation of cis-diaqua species is thermodynamic preferred to that of trans isomers. In addition, on the basis of the analysis of electronic characteristics of species in the hydrolysis process, the trend in nucleophilic attack abilities of hydrolysis products by pertinent biomolecules is revealed and predicted.

The Bipolar Field-Effect Transistor: III.Short Channel Electrochemical Current Theory (Two-MOS-Gates on Pure-Base)

This paper describes the short channel theory of the bipolar field-effect transistor （BiFET） by partitioning the transistor into two sections,the source and drain sections,each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and electron-hole-channel components of the output and transfer currents and conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the long physical channel currents and conductances from those of the short electrical channels are reported.

A Model of a Single Electron Transistor of Metallic Tunneling Junctions and Its Validation

Based on the orthodox theory,a model of a single electron transistor （SET） of metallic tunneling junctions is built using the master equation method. Several parameters of the device, such as capacitance, resistance and temperature,are input into the model and thus the I-V curves are attained. These curves are consistent with those from other experiments; therefore, the model is verified. However, there still exists a difference between simulated results and experimental results,mainly comes from the stationary case of the master equation. In other words, precision of simulated results would be increased if the transient case of the master equation is considered. Moreover, the current increases exponentially at higher drain voltages, which is due to the fact that the barrier suppression is caused by the image charge potential.

The Bipolar Field-Effect Transistor:Ⅰ.Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)

This paper describes the bipolar field-effect transistor （BiFET） and its theory. Analytical solution is ob- tained from partitioning the two-dimensional transistor into two one-dimensional transistors. The analysis employs the parametric surface-electric-potential and the electrochemical （quasi-Fermi） potential-gradient driving force to compute the current. Output and transfer D. C. current and conductance versus voltage are presented over practi- cal ranges of terminal D. C. voltages and device parameters. Electron and hole surface channel currents are pres- ent simultaneously, a new feature which could provide circuit functions in one physical transistor such as the CMOS inverter and SRAM memory.

Contrastive thematic analysis in research articles

Based on the theory of thematic complexity, a contrastive analysis on 2 sections selected from research articles-method and discussion, was conducted. The differences and similarities between the 2 sections in simple theme, multiple theme, textual theme, interpersonal theme, topical theme and thematic progression were analyzed and concluded. The author believes that the causes of the differences and similarities are the different genre features of the 2 sections and the academic features of the materials selected.

'The Theory of Field-Effect Transistors XII.The Bipolar Drift and Diffusion Currents(1-2-MOS-Gates on Thin-Thick Pure-Impure Base)

The previous report （XI） gave the electrochemical-potential theory of the Bipolar Field-Effect Transistors. This report （XII） gives the drift-diffusion theory. Both treat 1-gate and 2-gate, pure-base and impure-base, and thin and thick base. Both utilize the surface and bulk potentials as the parametric variables to couple the voltage and current equations. In the present drift-diffusion theory, the very many current terms are identified by their mobility multiplier for the components of drift current,and the diffusivity multiplier for the components of the diffusion current. Complete analytical driftdiffusion equations are presented to give the DC current-voltage characteristics of four common MOS transistor structures. The drift current consists of four terms： 1-D （One-Dimensional） bulk charge drift term, 1-D carrier space-charge drift term,l-D Ex^2 （transverse electric field） drift term,2-D drift term. The diffusion current consists of three terms： 1-D bulk charge diffusion term,l-D carrier space-charge diffusion term,and 2-D diffusion term. The 1-D Ex^2 drift term was missed by all the existing transistor theories, and contributes significantly, as much as 25 % of the total current when the base layer is nearly pure. The 2-D terms come from longitudinal gradient of the longitudinal electric field,which scales as the square of the Debye to Channel length ratio, at 25nm channel length with nearly pure base, （LD/L）^2 = 10^6 but with impurity concentration of 10^18cm^-3 , （LD/L）^2 = 10^-2 .

The Bipolar Field-Effect Transistor:V.Bipolar Electrochemical Current Theory(Two-MOS-Gates on Thin-Base)

This paper reports the intrinsic-structure DC characteristics computed from the analytical electrochemical current theory of the bipolar field-effect transistor （BiFET） with two identical MOS gates on nanometer-thick pure-base of silicon with no generation-recombination-trapping. Numerical solutions are rapidly obtained for the three potential variables,electrostatic and electron and hole electrochemical potentials,to give the electron and hole surface and volume channel currents,using our cross-link two-route or zig-zag one-route recursive iteration algorithms. Boundary conditions on the three potentials dominantly affect the intrinsic-structure DC characteristics,illustrated by examples covering 20-decades of current （10-22 to 10-2 A/Square at 400cm^2/（V · s） mobility for 1.5nm gate-oxide, and 30nm-thick pure-base）. Aside from the domination of carrier space-charge-limited drift current in the strong surface channels,observed in the theory is also the classical drift current saturation due to physical pinch-off of an impure-base volume channel depicted by the 1952 Shockley junction-gate field-effect transistor theory,and its extension to complete cut-off of the pure-base volume channel,due to vanishing carrier screening by the few electron and hole carriers in the pure-base,with Debye length （25mm） much larger than device dimension （25nm）.

The Bipolar Field-Effect Transistor:Ⅳ.Short Channel Drift-Diffusion Current Theory(Two-MOS-Gates on Pure-Base)

This paper gives the short channel analytical theory of the bipolar field-effect transistor （BiFET） with the drift and diffusion currents separately computed in the analytical theory. As in the last-month paper which represented the drift and diffusion current by the single electrochemical （potential-gradient） current, the two-dimensional transistor is partitioned into two sections, the source and drain sections, each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is then obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and the drift and diffusion components of the electron-channel and hole-channel currents and output and transfer conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the two-section short-channel theory from the one-section long-channel theory are described.

The Theory of Field-Effect Transistors:XI. The Bipolar Electrochemical Currents(1-2-MOS-Gates on Thin-Thick Pure-Impure Base)

The field-effect transistor is inherently bipolar, having simultaneously electron and hole surface and volume channels and currents. The channels and currents are controlled by one or more externally applied transverse electric fields. It has been known as the unipolar field-effect transistor for 55-years since Shockley＇s 1952 invention,because the electron-current theory inevitably neglected the hole current from over-specified internal and boundary conditions, such as the electrical neutrality and the constant hole-electrochemical-potential, resulting in erroneous solutions of the internal and terminal electrical characteristics from the electron channel current alone, which are in gross error when the neglected hole current becomes comparable to the electron current, both in subthreshold and strong inversion. This report presents the general theory, that includes both electron and hole channels and currents. The rectangular （ x, y, z） parallelepiped transistors,uniform in the width direction （z-axis）,with one or two MOS gates on thin and thick,and pure and impure base, are used to illustrate the two-dimensional effects and the correct internal and boundary conditions for the electric and the electron and hole electrochemical potentials. Complete analytical equations of the DC current-voltage characteristics of four common MOS transistor structures are derived without over-specification： the 1-gate on semi-infinite-thick impure-base （the traditional bulk transistor）, the 1-gate on thin impure-silicon layer over oxide-insulated silicon bulk （SOI） ,the 1-gate on thin impure-silicon layer deposited on insulating glass （SOI TFT）, and the 2-gates on thin pure-base （FinFETs）.

The Bipolar Field-Effect Transistor:II.Drift-Diffusion Current Theory(Two-MOS-Gates on Pure-Base)

This paper describes the drift-diffusion theory of the bipolar field-effect transistor （BiFET） with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin-pure-base. Analytical solution is obtained by partitioning the two-dimensional transistor into two one-dimensional problems coupled by the parametric sur- face-electric-potential. Total and component output and transfer currents and conductances versus D. C. voltages from the drift-diffusion theory, and their deviations from the electrochemical （quasi-Fermi） potential-gradient theory,are presented over practical ranges of thicknesses of the silicon base and gate oxide. A substantial contri- bution from the longitudinal gradient of the square of the transverse electric field is shown.

Damage failure of cemented backfill and its reasonable match with rock mass

In order to study the failure mechanism of backfill and the reasonable matches between backfill and rock mass, and to achieve the object of safe and efficient mining in metal mine, four types of backfills were tested under uniaxial compression loading, with cement?tailing ratios of 0.250:1, 0.125:1, 0.100:1 and 0.083:1, respectively. With the help of the stress?strain curves, the deformation and failure characteristics of different backfills with differing cement?tailing ratios were analyzed. Based on the experimental results, the damage constitutive equations of cemented backfills with four cement?tailing ratios were proposed on the basis of damage mechanics. Moreover, comparative analysis of constitutive model and experimental results were made to verify the reliability of the damage model. In addition, an energy model using catastrophe theory to obtain the instability criteria of system was established to study the interaction between backfill and rock mass, and then the system instability criterion was deduced. The results show that there are different damage characteristics for different backfills, backfills with lower cement?tailing ratio tend to have a lower damage value when stress reaches peak value, and damage more rapidly and more obviously in failure process after peak value of stress; the stiffness and elastic modulus of rock mass with lower strength are more likely to lead to system instability. The results of this work provide a scientific basis for the rational strength design of backfill mine.