Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth o...Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth of separation region between asymmetric GCT and PIN diode.A structure model of the RC-GCT is set up based on the design concept and its characteristics are analyzed.The simulation results show the design concept is reasonable.展开更多
Based on a short anode GTO structure （SA-GTO）,a novel GTO structure called an injection efficiency controlled gate turn off thyristor （IEC-GTO） is proposed,in which the injection efficiency can be controlled via a...Based on a short anode GTO structure （SA-GTO）,a novel GTO structure called an injection efficiency controlled gate turn off thyristor （IEC-GTO） is proposed,in which the injection efficiency can be controlled via an additional thin oxide layer located in the short anode contact region. The forward blocking, conducting, and switching characteristics are analyzed and compared with an SA-GTO and conventional GTO. The results show that the IEC-GTO can obtain a better trade-off relation between on-state and turn-off characteristics. Additionally,the width of the oxide layer covering the anode region and the doping concentration of the anode region are optimized, the process feasibility is analyzed, and a realization scheme is given. The results show that the introduction of an oxide layer would not increase the complexity of process of the IEC-GTO.展开更多
Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experim...Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experiments show that the breakdown voltages of the two-drift-region and general structures are 26V and 17V,respectively,and the on resistances are 65Ω and 80Ω,respectively.展开更多
WT8.BZ]A new quasi 2-dimensional analytical approach to predicting the ring voltage,edge peak fields and optimal spacing of the planar junction with a single floating field limiting ring structure has been proposed,ba...WT8.BZ]A new quasi 2-dimensional analytical approach to predicting the ring voltage,edge peak fields and optimal spacing of the planar junction with a single floating field limiting ring structure has been proposed,based on the cylindrical symmetric solution and the critical field concept.The effects of the spacing and reverse voltage on the ring junction voltage and edge peak field profiles have been analyzed.The optimal spacing and the maximum breakdown voltage of the structure have also been obtained.The analytical results are in excellent agreement with that obtained from the 2-D device simulator,MEDICI and the reported result,which proves the presented model valid.展开更多
The design, fabrication and characteristics of 4H SiC merged PN Schottky (MPS) diodes with Ni Schottky contact and junction termination extension (JTE) edge termination are reported. A multiple energy implantation ...The design, fabrication and characteristics of 4H SiC merged PN Schottky (MPS) diodes with Ni Schottky contact and junction termination extension (JTE) edge termination are reported. A multiple energy implantation Al in the surface of the n - drift region below the face to face Schottky metal formed pn junctions, which screen the Schottky contact from high electrical, post implantation annealing has been done at 1500℃ for 30min in the ultra high purity Ar ambient. The devices can block more than 600V reverse voltage and the lowest leakage current at -600V is 1×10 -3 A/cm 2, while the forward current density at 3V is more than 200A/cm 2 for 1000μm devices, 1000A/cm 2 at 3 5V for 300μm devices.展开更多
The floating body effect of an asymmetric and Ge implanted partially depleted 0 8μm SOI nMOSFET is investigated.It is found that the drain breakdown voltage can be improved by about 1V and that the anomalous subthr...The floating body effect of an asymmetric and Ge implanted partially depleted 0 8μm SOI nMOSFET is investigated.It is found that the drain breakdown voltage can be improved by about 1V and that the anomalous subthreshold slope and kink effect are also lessened.It is believed that the shallow junction in the source and defect states introduced by Ge implantation are responsible for the reduction of the floating body effect.展开更多
The weak solutions to the stationary quantum drift-diffusion equations （QDD） for semiconductor devices are investigated in one space dimension. The proofs are based on a reformulation of the system as a fourth-order...The weak solutions to the stationary quantum drift-diffusion equations （QDD） for semiconductor devices are investigated in one space dimension. The proofs are based on a reformulation of the system as a fourth-order elliptic boundary value problem by using an exponential variable transformation. The techniques of a priori estimates and Leray-Schauder＇s fixed-point theorem are employed to prove the existence. Furthermore, the uniqueness of solutions and the semiclassical limit δ→0 from QDD to the classical drift-diffusion （DD） model are studied.展开更多
This paper analyzes the operation parameters of the time delay and integration (TDI) line scan CCD camera, such as resolution, line rate, clock frequency, etc. and their mathematical relationship is deduced. By analyz...This paper analyzes the operation parameters of the time delay and integration (TDI) line scan CCD camera, such as resolution, line rate, clock frequency, etc. and their mathematical relationship is deduced. By analyzing and calculating these parameters, the working clocks of the TDI CCD line scan camera are designed, which guarantees the synchronization of the line scan rate and the camera movement speed. The IL-E2 TDI CCD of DALSA Co. is used as the sensor of the camera in the paper. The working clock generator used for the TDI CCD sensor is realized by using the programmable logic device (PLD). The experimental results show that the working clock generator circuit satisfies the requirement of high speed TDI CCD line scan camera.展开更多
Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heati...Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heating device and thermal control technology are needed for each new reactor design. By using resistance-wire heating MOCVD reaction chamber model, thermal analysis and structure optimization of the reactor were developed from the vertical position and the distance between coils of the resistance-wire heater. It is indicated that, within a certain range, the average temperature of the graphite susceptor varies linearly with the vertical distance of heater to susceptor, and with the changed distances between the coils; furthermore, single resistance-wire heater should be placed loosely in the internal and tightly in the external. The modulate accuracy of the temperature field approximately equals the change of the average temperature corresponding to the change of the coil position.展开更多
Two kinds of monolithically fabricated circuits are demonstrated in GaAs-based material systems using resonant tunneling diodes（RTD） and metal-semiconductor-metal photo detectors（MSM PD）. The electronic characteri...Two kinds of monolithically fabricated circuits are demonstrated in GaAs-based material systems using resonant tunneling diodes（RTD） and metal-semiconductor-metal photo detectors（MSM PD）. The electronic characteristics of these fabricated RTD devices,MSM devices,and integrated circuits are tested at room temperature. The results show that the current peak-to-valley ratio is 4,and the photocurrent at 5V is enhanced by a factor of nearly 9,from 2 to about 18μA by use of recessed electrodes. The working theory and logical functions of the circuits are validated.展开更多
This paper presents a new strategy of embedded energy management between battery and supercapacitors （SC） for hybrid electric vehicles （HEV） applications. This proposal is due to the present trend in the field, kn...This paper presents a new strategy of embedded energy management between battery and supercapacitors （SC） for hybrid electric vehicles （HEV） applications. This proposal is due to the present trend in the field, knowing that the major drawback of the HEV is the autonomy problem. Thus, using supercapacitors and battery with a good energy management improves the HEV performances. The main contribution of this paper is focused on DC-bus voltage and currents control strategies based on polynomial controller. These strategies are implemented in PICI8F4431 microcontroller for DC/DC converters control. Due to reasons of cost and available components （no optimized）, such as the battery and power semiconductors （IGBT）, the experimental tests are carried out in reduced scale （2.7 kW）. Through some simulations and experimental results obtained in reduced scale, the authors present an improved energy management strategy for HEV.展开更多
Compared with the traditional SCR phase-shift regulated power supply, a new type of power semiconductor , noncrystalline state magnetic material and pulse width modulation technology, high-power switching supply has m...Compared with the traditional SCR phase-shift regulated power supply, a new type of power semiconductor , noncrystalline state magnetic material and pulse width modulation technology, high-power switching supply has many advantages： small volume, high converting efficiency, good dynamic performance, small harmonic componont and small pollution to AC supply.展开更多
Zinc has been diffused into n-type InxGa1-xAs, InP and GaAs in closed ampoules, and the experimental data for InxGa1-xAs rarely reported previously have been obtained. Theoretically the linear relationship between log...Zinc has been diffused into n-type InxGa1-xAs, InP and GaAs in closed ampoules, and the experimental data for InxGa1-xAs rarely reported previously have been obtained. Theoretically the linear relationship between logarithmic diffusion coefficient InD and the composition x has been demonstrated, which is in good agreement with the experimental results. The calculated diffusion junction depth for InGaAs based on the diffusion model in which D∝ c2 is assumed also agrees well with that of the experiment. Finally the overall diffusion time in a multilayer heterostructure was approximated as t=(Σ )2.展开更多
The mositure content inside the hermetic package of semiconductor device has been quantitatively measured by using in-site sensor technique and computer-aided-test system.The principle and apparatus for measurement ar...The mositure content inside the hermetic package of semiconductor device has been quantitatively measured by using in-site sensor technique and computer-aided-test system.The principle and apparatus for measurement are introduced.The results show good repeatability and consistency.This technology can be used as a standard test for controlling the moisture content within semiconductor device package.展开更多
In this paper, we conduct theoretical research on design and implementation on wind and light complementary LED lighting controller based on the novel base board packaging technology. LED, as a kind of device can conv...In this paper, we conduct theoretical research on design and implementation on wind and light complementary LED lighting controller based on the novel base board packaging technology. LED, as a kind of device can convert electric power into visible light directly the homomorphism of semiconductor devices, with high efficiency and small energy consumption, good light quality, use safety, long service life, green environmental protection, flexible control as this is common lamps and lanterns is incomparable advantage. Therefore, it is considered to be 21 century of a new generation of lighting source. Based on the superiority of LED, it is widely applied in many fields of lighting. To enhance the traditional solar based pure LED system, we enhance it with the combination of the wind power and the optimized controller that holds specific meaning.展开更多
文摘Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth of separation region between asymmetric GCT and PIN diode.A structure model of the RC-GCT is set up based on the design concept and its characteristics are analyzed.The simulation results show the design concept is reasonable.
文摘Based on a short anode GTO structure （SA-GTO）,a novel GTO structure called an injection efficiency controlled gate turn off thyristor （IEC-GTO） is proposed,in which the injection efficiency can be controlled via an additional thin oxide layer located in the short anode contact region. The forward blocking, conducting, and switching characteristics are analyzed and compared with an SA-GTO and conventional GTO. The results show that the IEC-GTO can obtain a better trade-off relation between on-state and turn-off characteristics. Additionally,the width of the oxide layer covering the anode region and the doping concentration of the anode region are optimized, the process feasibility is analyzed, and a realization scheme is given. The results show that the introduction of an oxide layer would not increase the complexity of process of the IEC-GTO.
文摘Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experiments show that the breakdown voltages of the two-drift-region and general structures are 26V and 17V,respectively,and the on resistances are 65Ω and 80Ω,respectively.
文摘WT8.BZ]A new quasi 2-dimensional analytical approach to predicting the ring voltage,edge peak fields and optimal spacing of the planar junction with a single floating field limiting ring structure has been proposed,based on the cylindrical symmetric solution and the critical field concept.The effects of the spacing and reverse voltage on the ring junction voltage and edge peak field profiles have been analyzed.The optimal spacing and the maximum breakdown voltage of the structure have also been obtained.The analytical results are in excellent agreement with that obtained from the 2-D device simulator,MEDICI and the reported result,which proves the presented model valid.
文摘The design, fabrication and characteristics of 4H SiC merged PN Schottky (MPS) diodes with Ni Schottky contact and junction termination extension (JTE) edge termination are reported. A multiple energy implantation Al in the surface of the n - drift region below the face to face Schottky metal formed pn junctions, which screen the Schottky contact from high electrical, post implantation annealing has been done at 1500℃ for 30min in the ultra high purity Ar ambient. The devices can block more than 600V reverse voltage and the lowest leakage current at -600V is 1×10 -3 A/cm 2, while the forward current density at 3V is more than 200A/cm 2 for 1000μm devices, 1000A/cm 2 at 3 5V for 300μm devices.
文摘The floating body effect of an asymmetric and Ge implanted partially depleted 0 8μm SOI nMOSFET is investigated.It is found that the drain breakdown voltage can be improved by about 1V and that the anomalous subthreshold slope and kink effect are also lessened.It is believed that the shallow junction in the source and defect states introduced by Ge implantation are responsible for the reduction of the floating body effect.
文摘The weak solutions to the stationary quantum drift-diffusion equations （QDD） for semiconductor devices are investigated in one space dimension. The proofs are based on a reformulation of the system as a fourth-order elliptic boundary value problem by using an exponential variable transformation. The techniques of a priori estimates and Leray-Schauder＇s fixed-point theorem are employed to prove the existence. Furthermore, the uniqueness of solutions and the semiclassical limit δ→0 from QDD to the classical drift-diffusion （DD） model are studied.
基金Sponsored by the Research Fund of Harbin Institute of Technology (Grant No.HITMD 2001.18).
文摘This paper analyzes the operation parameters of the time delay and integration (TDI) line scan CCD camera, such as resolution, line rate, clock frequency, etc. and their mathematical relationship is deduced. By analyzing and calculating these parameters, the working clocks of the TDI CCD line scan camera are designed, which guarantees the synchronization of the line scan rate and the camera movement speed. The IL-E2 TDI CCD of DALSA Co. is used as the sensor of the camera in the paper. The working clock generator used for the TDI CCD sensor is realized by using the programmable logic device (PLD). The experimental results show that the working clock generator circuit satisfies the requirement of high speed TDI CCD line scan camera.
基金Projects(61376076,61274026,61377024)supported by the National Natural Science Foundation of ChinaProjects(12C0108,13C321)supported by the Scientific Research Fund of Hunan Provincial Education Department,ChinaProjects(2013FJ2011,2013FJ4232)supported by the Science and Technology Plan of Hunan Province,China
文摘Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heating device and thermal control technology are needed for each new reactor design. By using resistance-wire heating MOCVD reaction chamber model, thermal analysis and structure optimization of the reactor were developed from the vertical position and the distance between coils of the resistance-wire heater. It is indicated that, within a certain range, the average temperature of the graphite susceptor varies linearly with the vertical distance of heater to susceptor, and with the changed distances between the coils; furthermore, single resistance-wire heater should be placed loosely in the internal and tightly in the external. The modulate accuracy of the temperature field approximately equals the change of the average temperature corresponding to the change of the coil position.
文摘Two kinds of monolithically fabricated circuits are demonstrated in GaAs-based material systems using resonant tunneling diodes（RTD） and metal-semiconductor-metal photo detectors（MSM PD）. The electronic characteristics of these fabricated RTD devices,MSM devices,and integrated circuits are tested at room temperature. The results show that the current peak-to-valley ratio is 4,and the photocurrent at 5V is enhanced by a factor of nearly 9,from 2 to about 18μA by use of recessed electrodes. The working theory and logical functions of the circuits are validated.
文摘This paper presents a new strategy of embedded energy management between battery and supercapacitors （SC） for hybrid electric vehicles （HEV） applications. This proposal is due to the present trend in the field, knowing that the major drawback of the HEV is the autonomy problem. Thus, using supercapacitors and battery with a good energy management improves the HEV performances. The main contribution of this paper is focused on DC-bus voltage and currents control strategies based on polynomial controller. These strategies are implemented in PICI8F4431 microcontroller for DC/DC converters control. Due to reasons of cost and available components （no optimized）, such as the battery and power semiconductors （IGBT）, the experimental tests are carried out in reduced scale （2.7 kW）. Through some simulations and experimental results obtained in reduced scale, the authors present an improved energy management strategy for HEV.
文摘Compared with the traditional SCR phase-shift regulated power supply, a new type of power semiconductor , noncrystalline state magnetic material and pulse width modulation technology, high-power switching supply has many advantages： small volume, high converting efficiency, good dynamic performance, small harmonic componont and small pollution to AC supply.
文摘Zinc has been diffused into n-type InxGa1-xAs, InP and GaAs in closed ampoules, and the experimental data for InxGa1-xAs rarely reported previously have been obtained. Theoretically the linear relationship between logarithmic diffusion coefficient InD and the composition x has been demonstrated, which is in good agreement with the experimental results. The calculated diffusion junction depth for InGaAs based on the diffusion model in which D∝ c2 is assumed also agrees well with that of the experiment. Finally the overall diffusion time in a multilayer heterostructure was approximated as t=(Σ )2.
文摘The mositure content inside the hermetic package of semiconductor device has been quantitatively measured by using in-site sensor technique and computer-aided-test system.The principle and apparatus for measurement are introduced.The results show good repeatability and consistency.This technology can be used as a standard test for controlling the moisture content within semiconductor device package.
文摘In this paper, we conduct theoretical research on design and implementation on wind and light complementary LED lighting controller based on the novel base board packaging technology. LED, as a kind of device can convert electric power into visible light directly the homomorphism of semiconductor devices, with high efficiency and small energy consumption, good light quality, use safety, long service life, green environmental protection, flexible control as this is common lamps and lanterns is incomparable advantage. Therefore, it is considered to be 21 century of a new generation of lighting source. Based on the superiority of LED, it is widely applied in many fields of lighting. To enhance the traditional solar based pure LED system, we enhance it with the combination of the wind power and the optimized controller that holds specific meaning.
