Highly conductive boron-doped hydrogenated microcrystalline silicon （μc-Si： H） films and solar cells are pre- pared by plasma enhanced chemical vapour deposition （PECVD）. The effects of diborane concentration, t...Highly conductive boron-doped hydrogenated microcrystalline silicon （μc-Si： H） films and solar cells are pre- pared by plasma enhanced chemical vapour deposition （PECVD）. The effects of diborane concentration, thickness and substrate temperature on the growth and properties of B-doped layers and the performance of solar cells with high deposited rate i-layers are investigated. With the optimum p-layer deposition parameters, a higher efficiency of 5.5% is obtained with 0.78nm/s deposited i-layers. In addition, the carriers transport mechanism of p-type μc-Si： H films is discussed.展开更多
基金the State Key Development Program for Basic Research of China(No.2006CB202601)the Basic Research Project of Henan Province(No.072300410140)~~
文摘Highly conductive boron-doped hydrogenated microcrystalline silicon （μc-Si： H） films and solar cells are pre- pared by plasma enhanced chemical vapour deposition （PECVD）. The effects of diborane concentration, thickness and substrate temperature on the growth and properties of B-doped layers and the performance of solar cells with high deposited rate i-layers are investigated. With the optimum p-layer deposition parameters, a higher efficiency of 5.5% is obtained with 0.78nm/s deposited i-layers. In addition, the carriers transport mechanism of p-type μc-Si： H films is discussed.
