从小山田浩子的《陷阱》看到的婆媳关系

2014年2月,第150届芥川文学奖揭晓,日本女性作家小山田浩子凭借中篇小说《陷阱》(原著名为?穴(あな)?)获得此荣誉。自该奖项颁发以来,作家小山田浩子一跃成为日本文坛内的话题人物。针对这部作品的评论文章也多了起来。这些文章评述角度各异,涉及文章的虚构性角度,该作品中所表现出的对于个人主义的否定性的角度等等。笔者试着从婆媳关系这一角度来分析这部小说。通过采用文学研究中常见的文本分析的方式,以婆媳相处为基准,按照时间的推进顺序将小说内容分为四个部分,并对各部分中描写婆媳之间日常的内容进行细致分析,总结出婆媳相处的特点。同时,也通过对文中婆媳关系的描写来分析作者的写作意图,揭示作者想要传达给读者的隐藏信息。

陷阱是这样设置的

在某个鸡尾酒会上，张先生从口袋里掏出一张千元大钞，向所有的来宾宣布：他要将这张千元大钞拍卖给出价最高的朋友，大家互相竞价，以50元为单位，到没有人再加价为止。出价最高的人只要付给张先生他所开的价码即可获得这张千元大钞，但出价第二高的人，虽无法获得千元大钞，仍需将他所开的价码如数付给张先生。

陷阱里的兔子

兔一和兔二打架了，打得不可开交，就为了分吃一根萝卜。 兔一吃了大的一头，兔二吃了小的一头。

Laser-assisted water jet machining of high quality micro-trap structures on stainless steel surfaces

Secondary electron emission(SEE)has emerged as a critical issue in next-generation accelerators.Mitigating SEE on metal surfaces is crucial for enhancing the stability and emittance of particle accelerators while extending their lifespan.This paper explores the application of laser-assisted water jet technology in constructing high-quality micro-trap structures on 316L stainless steel,a key material in accelerator manufacturing.The study systematically analyzes the impact of various parameters such as laser repetition frequency,pulse duration,average power,water jet pressure,repeat times,nozzle offset,focal position,offset distance between grooves,and processing speed on the surface morphology of stainless steel.The findings reveal that micro-groove depth increases with higher laser power but decreases with increasing water jet pressure and processing speed.Interestingly,repeat times have minimal effect on depth.On the other hand,micro-groove width increases with higher laser power and repeat times but decreases with processing speed.By optimizing these parameters,the researchers achieved high-quality pound sign-shaped trap structure with consistent dimensions.We tested the secondary electron emission coefficient of the"well"structure.The coefficient is reduced by 0.5 at most compared to before processing,effectively suppressing secondary electron emission.These results offer indispensable insights for the fabrication of micro-trap structures on material surfaces.Laser-assisted water jet technology demonstrates considerable potential in mitigating SEE on metal surfaces.

Composition and Distribution of Soil Spider Assemblages in Three Natural Secondary Forests in Ziwuling, Gansu

Soil spiders were pitfall-trapped once every month in three forest vegetation types of Ziwuling natural secondary forest region, Gansu Province from April to October, 2004. A total of 2 164 spiders were collected, belonging to 43 species in 19 families, captured in 630 pitfall trap collections. Linyphiidae, Gnaphosidae and Lycosodae were found to be the dominant families in all habitat types, and the composition of soil spider assemblages was different between the three habitats. Ecological indices of diversity, richness and evenness were significantly different between the three habitats （ P 〈 0.05）. The relative abundance of guilds （based on numbers of individuals） varied greatly （P 〈 0.01）, which may releet resource availability within habitat types. The existence of different patterns within the assemblages reflects the importance of maintaining habitat heterogeneity and vegetation types in order to preserve soil spider biodiversity.

Numerical Study of Optimization of Layer Thickness in Bilayer Organic Light-Emitting Diodes

A numerical model for bilayer organic light-emitting diodes (OLEDs) is developed under the basis of trapped charge limited conduction.The dependences of the current density on the layer thickness,trap properties and carrier mobility of the hole transport layer (HTL) and emission layer (EML) in bilayer OLEDs of the structure anode/HTL/EML/cathode are numerically investigated.It is found that,for given values of the total thickness of organic layers,reduced depth of trap,total density of trap,and carrier mobility of HTL as well as EML,there exists an optimal thickness ratio of HTL to EML,by which a maximal quantum efficiency can be achieved.Through optimization of the thickness ratio,an enhancement of current density and quantum efficiency of as much as two orders of magnitude can be obtained.The dependences of the optimal thickness ratio to the characteristic trap energy,total density of trap and carrier mobility are numerically analyzed.

Exciton-Phonon Coupling of NN_3 Center in Heavily Nitrogen Doped GaP

Under heavy nitrogen doping,due to the “concentration quenching” effect,the full spectrum of the NN 3 center is revealed without the interference from the spectra of other higher energy centers.This investigation offers a direct proof for that all the phonon replicas are the phonon sidebands governed by the Huang Rhys’ multiphonon optical transition theory.

Dependence of R-G Currenton Bulk Traps Characteristics and Silicon Film Structure in SOI Gated-Diode

The dependence of the Recombination- Generation( R- G) current on the bulk trap characteristics and sili- con film structure in SOI lateral p+ p- n+ diode has been analyzed num erically by using the simulation tool,DESSIS- ISE.By varying the bulk trap characteristics such as the trap density and energy level spectrum systematically,the dependence of the R- G current on both of them has been dem onstrated in details.Moreover,the silicon film doping concentration and thickness are changed to make silicon body varies from the fully- depletion m ode into the partial- ly- depletion one.The influence of the transfer of silicon body characteristics on the R- G currenthas also been care- fully examined.A better understanding is obtained of the behavior of bulk trap R- G current in the SOI lateral gat- ed- diode.

New Forward Gated-Diode Technique for Separating Front Gate Interface- from Oxide-Traps Induced by Hot-Carrier-Stress in SOI-NMOSFETs

The front gate interface and oxide traps induced by hot carrier stress in SOI NMOSFETs are studied.Based on a new forward gated diode technique,the R G current originating from the front interface traps is measured,and then the densities of the interface and oxide traps are separated independently.The experimental results show that the hot carrier stress of front channel not only results in the strong generation of the front interface traps,but also in the significant oxide traps.These two kinds of traps have similar characteristic in increasing with the hot carrier stress time.This analysis allows one to obtain a clear physical picture of the effects of the hot carrier stress on the generating of interface and oxide traps,which help to understand the degradation and reliability of the SOI MOSFETs.

Stress Induced Leakage Current in Different Thickness Ultrathin Gate Oxide MOSFET

A study of the gate current variation is presented for various thickness ultrathin gate oxides ranging from 1.9 to 3.0nm under the constant voltage stress.The experimental results show the stress induced leakage current(SILC) includes two parts.One is due to the interface trap-assisted tunneling.The other is owing to the oxide trap-assisted tunneling.

Energy Dependence of Interface Trap Density——Investigated by Relaxation Spectral Technique

According to the definition of interface traps,a new application of relaxation spectral technique to sub-threshold swing shift and sub-threshold gate voltage shift is proposed to extract interface trap density in 1.9nm MOSFET.And thus the energy distribution of interface trap can be determined.According to the two methods,the energy profile of interface traps agrees with those reported in literature.Compared to other methods,this method is simpler and more convenient.

Effectof Neutral Traps on Tunneling Current and SILC in Ultrathin Oxide Layer

The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- sis.The barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in the con- duction band of Si O2 .The different barrier variation of an ultrathin metal- oxide- sem iconductor(MOS) structure with oxide thickness of4nm is numerically calculated.It is shown that the effect of neutral trap on tunneling cur- rent can not be neglected.The tunneling current is increased when the neutral trap exists in the oxide layer.This simple m odel can be used to understand the occurring mechanism of stress induced leakage current.

Numerical Explanation of Slow Transients in an AlGaN/GaN HEMT

A series of slow drain current recovery transients at different gate biases after a short-term stress are observed in an AIGaN/GaN HEMT. As the variation of the time constants of the transients is small, the working trap is determined to be electronic. A numerical simulation verifies this conclusion and reproduces the measured transients. The electron traps at different spatial positions in the device-on the ungated surface of the AIGaN layer,in the AIGaN barrier, and in the GaN layer are considered;corresponding behaviors in the stress and the transients are discussed;and for the simulated transients, agreement with and deviation from the measured transients are explained. Based on this discussion, we suggest that the measured transients are caused by the combined effects of a deep surface trap and a bulk trap in the GaN layer.

Effect of Snapback Stress on Gate Oxide Integrity of nMOSFET in 90nm Technology

By measurement,we investigate the characteristics and location of gate oxide damage induced by snapback stress. The damage incurred during stress causes device degradation that follows an approximate power law with stress time. Oxide traps generated by stress will cause the increase of stress-induced leakage current and the decrease of Qbd （charge to breakdown）,and it may also cause the degradation of off-state drain leakage current. Stress-induced gate oxide damage is located not only in the drain side but also in the source side. The tertiary electrons generated by hot holes move toward Si-SiO2 interface under the electrical field toward the substrate,which explains the source side gate oxide damage.

Characterization of Oxide Charge During Hot-Carrier Degradation of Ultrathin Gate pMOSFETs--Investigated by Charge Pumping Technique

The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is observed for pMOSFETs with different channel lengths under hot-carrier stress.Thus,the relationships of oxide charge generation,including electron trapping and hole trapping effects,with different stress voltages and channel lengths are analyzed.It is also found that there is a two-step process in the generation of oxide charge for pMOSFETs.For a short stress time,electron trapping is predominant,whereas for a long stress time,hole trapping dominates the generation of oxide charge.

A Method to Separate Effects of Oxide-Trapped Charge and Interface-Trapped Charge on Threshold Voltage in pMOSFETs Under Hot-Carrier Stress

A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degradation in p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) under hot-carrier stress.Further,the experimental results verify the validness of this method.It is shown that,all three mechanisms of electron trapping effect,hole trapping effect and interface trap generation play important roles in p-channel MOSFETs degradation.It is noted that interface-trapped charge is still the dominant mechanism for hot-carrier-induced degradation in p-channel MOSFETs,while a significant contribution of oxide-trapped charge to threshold voltage is demonstrated and quantified.

Effect of Band Trap Band Current on DCIV Spectrum Peaks at LDD Drain Region in 0.275μm nMOST's

Interface traps generated under hot carrier (HC) stress in LDD nMOST's are monitored by the direct current current voltage (DCIV) measurement technique and charge pumping (CP) technique.The measured and analyzed results show that the D peak in DCIV spectrum,which related to the drain region,is affected by a superfluous drain leakage current.The band trap band tunneling current is dominant of this current.

Degradation of P-MOSFETs Under Off-State Stress

The hot carrier effects under off- state stress m ode( Vgs=0 ,Vds<0 ) have been investigated on9nm P- MOSFETs with channel length varying from1.0 2 5 μm to0 .5 2 5 μm.Both on- and off- state currents are discussed. It is found that the off- state leakage current decreases after a higher voltage stressing,which is induced by the charge injection occurred close to the drain junction.However,the leakage current increases after a lower voltage stressing because of the newly generated interface traps.It is also found that the on state saturation current and threshold voltage degrade significantly with the stress tim e,which we believe is due to the charges injected near the gate- drain overlapping region and/ or the stress- induced interface trap generation.The degradation of Idsatcan be ex- pressed as a function of the product of the gate current( Ig) and the num ber of charges injected into the gate oxide ( Qinj) in a simple power law.Finally,a lifetime prediction model based on the degradation of Idsatis proposed.