MoO3 nanobelts （NBs） having different properties have been synthesized via a physical vapor deposition （PVD） method. The crystallographic structures and morphologies of the NBs were characterized by X-ray diffract...MoO3 nanobelts （NBs） having different properties have been synthesized via a physical vapor deposition （PVD） method. The crystallographic structures and morphologies of the NBs were characterized by X-ray diffraction, transmission electron microscopy and scanning electron microscopy. Electrical measurements were performed and the profound piezoresistive effect in MoO3 experimentally studied and verified. Factors that influence the gauge factor, such as NB size, doping concentration and atmosphere composition, are discussed and analyzed. Gas sensing performance was also tested in devices and it was demonstrated that by applying strain to the gas sensor, its sensing performance could be effectively tuned and enhanced. This study provides the first demonstration of significant piezoresistivity in MoO3 NBs and the first illustration of a generic mechanism by means of which this effect can be coupled with other electronic modulation measures to afford better device performance and broader material functionality.展开更多
文摘MoO3 nanobelts （NBs） having different properties have been synthesized via a physical vapor deposition （PVD） method. The crystallographic structures and morphologies of the NBs were characterized by X-ray diffraction, transmission electron microscopy and scanning electron microscopy. Electrical measurements were performed and the profound piezoresistive effect in MoO3 experimentally studied and verified. Factors that influence the gauge factor, such as NB size, doping concentration and atmosphere composition, are discussed and analyzed. Gas sensing performance was also tested in devices and it was demonstrated that by applying strain to the gas sensor, its sensing performance could be effectively tuned and enhanced. This study provides the first demonstration of significant piezoresistivity in MoO3 NBs and the first illustration of a generic mechanism by means of which this effect can be coupled with other electronic modulation measures to afford better device performance and broader material functionality.
