International standards impose several constraints concerning the electric power quality and require that the harmonic content of the line current of grid connected equipment is below assigned limits; for this reason,...International standards impose several constraints concerning the electric power quality and require that the harmonic content of the line current of grid connected equipment is below assigned limits; for this reason, operating of AC-DC converters with high power factor and low line current distortion has become essential. In this paper, the prototypal realization of a three-phase AC-DC 48 V power electronic converter for telecom system supplying is described and experimental testing results are discussed. The main constraints in the power supply design are the required power density of about 900 W per dm3 as well as the absence of the neutral wire in the supply grid. The carried out investigation is focused on three-level power converter configurations which are considered in order to reduce voltage rating of power switches. As a result of the reduced voltage, low on-resistance metal-oxide-semiconductor field effect transistors can be used in the power stage, solution which allows to achieve improved efficiency as well as increased switching frequency with respect to the insulated gate bipolar transistors based two-level topologies.展开更多
文摘International standards impose several constraints concerning the electric power quality and require that the harmonic content of the line current of grid connected equipment is below assigned limits; for this reason, operating of AC-DC converters with high power factor and low line current distortion has become essential. In this paper, the prototypal realization of a three-phase AC-DC 48 V power electronic converter for telecom system supplying is described and experimental testing results are discussed. The main constraints in the power supply design are the required power density of about 900 W per dm3 as well as the absence of the neutral wire in the supply grid. The carried out investigation is focused on three-level power converter configurations which are considered in order to reduce voltage rating of power switches. As a result of the reduced voltage, low on-resistance metal-oxide-semiconductor field effect transistors can be used in the power stage, solution which allows to achieve improved efficiency as well as increased switching frequency with respect to the insulated gate bipolar transistors based two-level topologies.
