我国全膜高压并联补偿电容器经过20年的普及使用,不论是生产厂家还是用户均有人提出:当年由全国无功补偿装置专家工作组确定的全膜电容器设计场强不宜大于57 k V/mm(k=1)的指标不适用了,应提高电容器设计场强。经对我国主导生产厂家的...我国全膜高压并联补偿电容器经过20年的普及使用,不论是生产厂家还是用户均有人提出:当年由全国无功补偿装置专家工作组确定的全膜电容器设计场强不宜大于57 k V/mm(k=1)的指标不适用了,应提高电容器设计场强。经对我国主导生产厂家的三膜结构并联电容器绝缘耐受水平的研究,得出专家工作组的这一规定对我国全膜高压并联电容器健康快速发展起到了十分关键的作用,进一步提高设计场强应谨慎,应在进行充分研究的基础上再做提高设计场强变更,否则对产品的运行可靠性是不利的。展开更多
Prior studies using single and binary adsorbates indicate that nanografting impacts the reaction pathways and local structure of self-assembled monolayers (SAMs). This work explores the influence of nanografting in ...Prior studies using single and binary adsorbates indicate that nanografting impacts the reaction pathways and local structure of self-assembled monolayers (SAMs). This work explores the influence of nanografting in the case of ternary SAMs. Using atomic force microscopy (AFM) as both a nanografting and imaging tool, the local structures of two ternary SAMs, SC14:SSC10CHO:SC2COOH and SC18:SSC10CHO:SC2COOH, formed under natural growth and nanografting were imaged and compared. The results indicate that nanografting impacts the degree of phase segregation and the domain height in ternary SAMs. In addition to the previously known effect of altering self-assembly pathways, this study reveals an additional impact for these ternary systems: By shaving over the previous trajectory (grafted region), nanografting could start exchange reactions and lateral movement of surface-bound thiols, which leads to new and somewhat unanticipated local structures.展开更多
文摘我国全膜高压并联补偿电容器经过20年的普及使用,不论是生产厂家还是用户均有人提出:当年由全国无功补偿装置专家工作组确定的全膜电容器设计场强不宜大于57 k V/mm(k=1)的指标不适用了,应提高电容器设计场强。经对我国主导生产厂家的三膜结构并联电容器绝缘耐受水平的研究,得出专家工作组的这一规定对我国全膜高压并联电容器健康快速发展起到了十分关键的作用,进一步提高设计场强应谨慎,应在进行充分研究的基础上再做提高设计场强变更,否则对产品的运行可靠性是不利的。
文摘Prior studies using single and binary adsorbates indicate that nanografting impacts the reaction pathways and local structure of self-assembled monolayers (SAMs). This work explores the influence of nanografting in the case of ternary SAMs. Using atomic force microscopy (AFM) as both a nanografting and imaging tool, the local structures of two ternary SAMs, SC14:SSC10CHO:SC2COOH and SC18:SSC10CHO:SC2COOH, formed under natural growth and nanografting were imaged and compared. The results indicate that nanografting impacts the degree of phase segregation and the domain height in ternary SAMs. In addition to the previously known effect of altering self-assembly pathways, this study reveals an additional impact for these ternary systems: By shaving over the previous trajectory (grafted region), nanografting could start exchange reactions and lateral movement of surface-bound thiols, which leads to new and somewhat unanticipated local structures.