The HOPping Field Emission Display （HOPFED） is a new architecture for field emission displays. The main difference between a conventional Field Emission Display （FED） device and a ItOPFED lies in the spacer struct...The HOPping Field Emission Display （HOPFED） is a new architecture for field emission displays. The main difference between a conventional Field Emission Display （FED） device and a ItOPFED lies in the spacer structure. In a HOPFED, two dielectric plates, named hop and flu spacer, are sandwiched between the emitter and the front plate. The objective of this spacer structure is to improve the performance oF a FED substantially with notable contrast, color purity and luminance uniformity. In order to optimize the structure of the device and to make the electron spot on the screen match the requirement of the phosphor dot dimension, the influence of electrical and structural parameters of the device on the electron spot profile was studied by numerical simulation in this paper. Monte Carlo method was employed to calculate the potential distribution inside hop and flu spacers due to secondary electrons mechanism plays an important role in HOPFED. The results indicated that the potential distribution in the spacers and spot profile depended strongly on the hop voltage, anode voltage and spacer＇s layout. This study may provide a useful theoretical support for optimizing the structure in HOPFED.展开更多
文摘The HOPping Field Emission Display （HOPFED） is a new architecture for field emission displays. The main difference between a conventional Field Emission Display （FED） device and a ItOPFED lies in the spacer structure. In a HOPFED, two dielectric plates, named hop and flu spacer, are sandwiched between the emitter and the front plate. The objective of this spacer structure is to improve the performance oF a FED substantially with notable contrast, color purity and luminance uniformity. In order to optimize the structure of the device and to make the electron spot on the screen match the requirement of the phosphor dot dimension, the influence of electrical and structural parameters of the device on the electron spot profile was studied by numerical simulation in this paper. Monte Carlo method was employed to calculate the potential distribution inside hop and flu spacers due to secondary electrons mechanism plays an important role in HOPFED. The results indicated that the potential distribution in the spacers and spot profile depended strongly on the hop voltage, anode voltage and spacer＇s layout. This study may provide a useful theoretical support for optimizing the structure in HOPFED.
