TiN gate thin-film fully-depleted SOI CMOS devices are fabricated and discussed.Key process technologies are demonstrated.Compared with the dual polysilicon gate devices,the channel doping concentration of nMOS and pM...TiN gate thin-film fully-depleted SOI CMOS devices are fabricated and discussed.Key process technologies are demonstrated.Compared with the dual polysilicon gate devices,the channel doping concentration of nMOS and pMOS can be reduced without changing threshold voltage (V T),which enhances the mobility.Symmetrical V T is achieved by nearly the same V T implant dose because of the near mid-gap workfunction of TiN gate.The SCE effect is improved when the thin-film thickness is reduced.展开更多
文摘TiN gate thin-film fully-depleted SOI CMOS devices are fabricated and discussed.Key process technologies are demonstrated.Compared with the dual polysilicon gate devices,the channel doping concentration of nMOS and pMOS can be reduced without changing threshold voltage (V T),which enhances the mobility.Symmetrical V T is achieved by nearly the same V T implant dose because of the near mid-gap workfunction of TiN gate.The SCE effect is improved when the thin-film thickness is reduced.
