期刊文献+
共找到7篇文章
< 1 >
每页显示 20 50 100
事态体比较与分形 被引量:1
1
作者 田大钢 费奇 《系统工程学报》 CSCD 1997年第4期21-29,共9页
详细分析了决策者在风险情况下的决策行为,给出了事态体与确定型事件等价的数学定义.由此获得了计算事态体等价确定值与计算自仿射集的维数之间的关系及简单计算公式,解释了Alais悖论.
关键词 事态体 等价确定值 分形 决策理论
下载PDF
动宾式短语“V个NP”的语法特性、时体意义与句法结构
2
作者 陆志军 《语言科学》 CSSCI 北大核心 2022年第5期498-508,共11页
三类“V+NP”短语在V与NP之间的离合度方面形成一个从合到离的连续统,而非量词“个”与量词“个”形成一个从“离”到“合”的反向连续统。非量词“个”兼具两种语法意义:表时间性界限的限时体标记和表态度性界限的主观语气标记。前者... 三类“V+NP”短语在V与NP之间的离合度方面形成一个从合到离的连续统,而非量词“个”与量词“个”形成一个从“离”到“合”的反向连续统。非量词“个”兼具两种语法意义:表时间性界限的限时体标记和表态度性界限的主观语气标记。前者表明“个”对未然、方然、曾然或已然事态的界化特性,而后者表明“个”的小量性、低估性或轻松随便的语气。非量词“个”是表限时的事态体标记。事态体标记“个”的句法位置高于语法体标记“着、了_(1)、过”,能够将动词所指涉的某种动作或“着、了_(1)、过”所指涉的某种事件转化为相应的事态。与量词“个”连用的“V+NP”是在句法中推导生成的短语结构,与非量词“个”连用的“V+NP”则是在词汇矩阵中直接生成的词结构。 展开更多
关键词 V个NP 非量词 离合度 事态体标记
下载PDF
权重效用模型在人力资源上的应用实例
3
作者 邱容 刘若兰 《北方经贸》 2013年第11期162-162,165,共2页
在人力资源市场中,如何高效地找到最适合的应聘者。在面对不同条件却同样优秀的应聘者时,应该做出什么样的抉择。本文应用管理决策中的权重效用模型,提出了一种用数量关系解决问题的方法。并结合人力资源实例,对这两个问题进行解答。
关键词 招聘 复合事态体 权重函数 效用函数
下载PDF
Evolved Urban Form to Respond to Extreme Sea Level Events in Coastal Cities
4
作者 Wang Liangling Han Jie 《Journal of Civil Engineering and Architecture》 2016年第6期726-735,共10页
Along with climate change and global warming, ESLEs (extreme sea level events) are seriously threatening coastal cities' development. In order to respond to such events, transformational adaptation strategy in urba... Along with climate change and global warming, ESLEs (extreme sea level events) are seriously threatening coastal cities' development. In order to respond to such events, transformational adaptation strategy in urban planning might play an important role. For instance, it has been proposed that BCR (building coverage ratio) should be minimized to a certain range in order to enhance coastal areas' resiliency. For the purpose of urban planning practices, the main objective of this research is to develop a method which could formulate the proper BCR range in vulnerable coastal areas. The research is conducted through simulating storm surge floods in simplified waterfront settlements with different BCRs. Data representing the impact of ESLEs collected through CFD (computational fluid dynamic) simulations has been examined. This research has proved that in dense coastal areas, ESLEs may cause serious damage to the built environment if their protective structures fail. It showed that controlling BCR is an effective way to enhance their resiliency. When the BCR is low, the pressure caused by storm surge floods and wave height can be greatly reduced. However, decreased BCR may also reduce land utilization efficiency. Simulation results indicated that controlling the BCR to around 36% might be the most effective scenario which balances resiliency and land use efficiency. They also showed that under the same storm surge flood scenario, the pressures caused by flood waves could be reduced if the length of the building is increased. This study might be considered as transformational adaptation measures that contributes some knowledge for waterfront development in vulnerable locations, and it also provides scientific and useful proof for sustainable strategies in coastal cities and reveals that particular urban design tools, such as BCR control, could play an essential role in responding to ESLEs. 展开更多
关键词 ESLEs BCR transformational adaptation CFD simulation.
下载PDF
Novel N-hit single event transient mitigation technique via open guard transistor in 65 nm bulk CMOS process 被引量:5
5
作者 HUANG PengCheng CHEN ShuMing +1 位作者 CHEN JianJun LIU BiWei 《Science China(Technological Sciences)》 SCIE EI CAS 2013年第2期271-279,共9页
In this paper,we proposed a new n-channel MOS single event transient(SET) mitigation technique,which is called the open guard transistor(OGT) technique.This hardening scheme is compared with several classical n-channe... In this paper,we proposed a new n-channel MOS single event transient(SET) mitigation technique,which is called the open guard transistor(OGT) technique.This hardening scheme is compared with several classical n-channel MOS hardening structures through 3-D TCAD simulations.The results show that this scheme presents about 35% improvements over the unhardened scheme for mitigating the SET pulse,and its upgrade,the 2-fringe scheme,takes on even more than 50% improvements over the unhardened one.This makes significant sense for the semi-conductor device reliability. 展开更多
关键词 single event transient (SET) open guard transistor (OGT) charge collection hardening efficiency.
原文传递
Hybridization and genome evolution I: The role of contingency during hybrid speciation 被引量:3
6
作者 Fabrice EROUKHMANOFF Richard I. BAILEY Glenn-PETER SaeTRE 《Current Zoology》 SCIE CAS CSCD 2013年第5期667-674,共8页
Homoploid hybrid speciation (HHS) involves the recombination of two differentiated genomes into a novel, func- tional one without a change in chromosome number. Theoretically, there are numerous ways for two parenta... Homoploid hybrid speciation (HHS) involves the recombination of two differentiated genomes into a novel, func- tional one without a change in chromosome number. Theoretically, there are numerous ways for two parental genomes to recom- bine. Hence, chance may play a large role in the formation of a hybrid species. If these genome combinations can evolve rapidly following hybridization and sympatric situations are numerous, recurrent homoploid hybrid speciation is a possibility. We argue that three different, but not mutually exclusive, types of contingencies could influence this process. First, many of these "hopeful monsters" of recombinant parent genotypes would likely have low fitness. Only specific combinations of parental genomic con- tributions may produce viable, intra-fertile hybrid species able to accommodate potential constraints arising from intragenomic conflict. Second, ecological conditions (competition, geography of the contact zones or the initial frequency of both parent spe- cies) might favor different outcomes ranging from sympatric coexistence to the formation of hybrid swarms and ultimately hybrid speciation. Finally, history may also play an important role in promoting or constraining recurrent HHS if multiple hybridization events occur sequentially and parental divergence or isolation differs along this continuum. We discuss under which conditions HHS may occur multiple times in parallel and to what extent recombination and selection may fuse the parent genomes in the same or different ways. We conclude by examining different approaches that might help to solve this intriguing evolutionary puz- zle [Current Zoology 59 (5): 667-674, 2013]. 展开更多
关键词 Dimensionality Genetic Mosaicism HYBRIDIZATION SPECIATION
原文传递
Analysis of process variations impact on the single-event transient quenching in 65 nm CMOS combinational circuits 被引量:2
7
作者 WANG TianQi XIAO LiYi +1 位作者 ZHOU Bin QI ChunHua 《Science China(Technological Sciences)》 SCIE EI CAS 2014年第2期322-331,共10页
Single-event transient pulse quenching (Quenching effect) is employed to effectively mitigate WSET (SET pulse width). It en- hanced along with the increased charge sharing which is norm for future advanced technol... Single-event transient pulse quenching (Quenching effect) is employed to effectively mitigate WSET (SET pulse width). It en- hanced along with the increased charge sharing which is norm for future advanced technologies. As technology scales, param- eter variation is another serious issue that significantly affects circuit's performance and single-event response. Monte Carlo simulations combined with TCAD (Technology Computer-Aided Design) simulations are conducted on a six-stage inverter chain to identify and quantify the impact of charge sharing and parameter variation on pulse quenching. Studies show that charge sharing induce a wider WSET spread range. The difference of WSET range between no quenching and quenching is smaller in NMOS (N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor) simulation than that in PMOS' (P-Channel Met- N-Oxide-Semiconductor Field-Effect Transistor), so that from parameter variation view, quenching is beneficial in PMOS SET mitigation. The individual parameter analysis indicates that gate oxide thickness (TOXE) and channel length variation (XL) mostly affect SET response of combinational circuits. They bring 14.58% and 19.73% average WSET difference probabilities for no-quenching cases, and 105.56% and 123.32% for quenching cases. 展开更多
关键词 single-event transient (SET) parameter variation Monte Carlo simulation quenching effect charge share
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部