The channel lateral pocket or halo region of NMOSFET characterized by interface state R G current of a forward gated diode has been investigated numerically for the first time.The result of numerical analysis demons...The channel lateral pocket or halo region of NMOSFET characterized by interface state R G current of a forward gated diode has been investigated numerically for the first time.The result of numerical analysis demonstrates that the effective surface doping concentration and the interface state density of the pocket or halo region are interface states R G current peak position dependent and amplitude dependent,respectively.It can be expressed quantitatively according to the device physics knowledge,thus,the direct characterization of the interface state density and the effective surface doping concentration of the pocket or halo becomes very easy.展开更多
A generic numerical model of a long-wavelength Avalanche Photodiode （APD） based on narrow bandgap semiconductor InAsSb on InAs substrate is reported for the first time. This model has been applied for theoretical ch...A generic numerical model of a long-wavelength Avalanche Photodiode （APD） based on narrow bandgap semiconductor InAsSb on InAs substrate is reported for the first time. This model has been applied for theoretical characterization of a proposed N^＋ InAS/P-InAsSb avalanche photodiode structure for possible application in 2-5 μm wavelength region. The parameters such as gain, excess noise factor and their trade-off with variation of doping concentration and bias voltage have been estimated for the APD taking into account history-dependent theory of avalanche multiplication process, The LWIR APD is expected to fred application in optical gas sensor and in future generation of optical communication system.展开更多
The silicon PN junction photodiode with very small sensitive area has been investigated.The device gets superhigh light current density J LS counted by the sensitive area in the planar PN junction.The superhi...The silicon PN junction photodiode with very small sensitive area has been investigated.The device gets superhigh light current density J LS counted by the sensitive area in the planar PN junction.The superhigh light current density is due to the light current transferred by the photogenerated minority carriers in the area around edges of the dopant diffused region.Then,we can determine the diffusion length of the photogenerated minority carriers in the substance by measuring the light current of the PN junction photodiode with very small sensitive area.展开更多
This paper presents the possibilities offered by fluorescence spectroscopy for the identification of vegetable oils such as soybean, sunflower, flax, walnut, corn, almond, sesame, olive and pumpkin oils. The probes un...This paper presents the possibilities offered by fluorescence spectroscopy for the identification of vegetable oils such as soybean, sunflower, flax, walnut, corn, almond, sesame, olive and pumpkin oils. The probes under study have been excited with two types of sources： a laser diode （LD） and light-emitting diodes （LEDs） emitting in the UV and in the visible range. Total luminescence spectra were recorded by measuring the emission spectra in the range 350-720 nm at excitation wavelengths from 375 to 450 nm. The excitation-emission matrices have been obtained and two basic fluorescence regions in the visible have been outlined. On this basis the fluorescence spectra of the oils have been subdivided into three categories depending on the prevalence of the fluorescence maxima. The samples show differences in their fluorescence spectra. The latter fact shows that fluorescence spectroscopy can be used for the quick identification of edible oils. The fatty acid, the tocopherol, the beta-carotene and chlorophyll contents in the analyzed oils have been studied. It is shown that some of the types of oils differ significantly from each other by the first derivatives of their fluorescence spectra. There also exist color differences between the groups of vegetable oils under study.展开更多
文摘The channel lateral pocket or halo region of NMOSFET characterized by interface state R G current of a forward gated diode has been investigated numerically for the first time.The result of numerical analysis demonstrates that the effective surface doping concentration and the interface state density of the pocket or halo region are interface states R G current peak position dependent and amplitude dependent,respectively.It can be expressed quantitatively according to the device physics knowledge,thus,the direct characterization of the interface state density and the effective surface doping concentration of the pocket or halo becomes very easy.
文摘A generic numerical model of a long-wavelength Avalanche Photodiode （APD） based on narrow bandgap semiconductor InAsSb on InAs substrate is reported for the first time. This model has been applied for theoretical characterization of a proposed N^＋ InAS/P-InAsSb avalanche photodiode structure for possible application in 2-5 μm wavelength region. The parameters such as gain, excess noise factor and their trade-off with variation of doping concentration and bias voltage have been estimated for the APD taking into account history-dependent theory of avalanche multiplication process, The LWIR APD is expected to fred application in optical gas sensor and in future generation of optical communication system.
文摘The silicon PN junction photodiode with very small sensitive area has been investigated.The device gets superhigh light current density J LS counted by the sensitive area in the planar PN junction.The superhigh light current density is due to the light current transferred by the photogenerated minority carriers in the area around edges of the dopant diffused region.Then,we can determine the diffusion length of the photogenerated minority carriers in the substance by measuring the light current of the PN junction photodiode with very small sensitive area.
文摘This paper presents the possibilities offered by fluorescence spectroscopy for the identification of vegetable oils such as soybean, sunflower, flax, walnut, corn, almond, sesame, olive and pumpkin oils. The probes under study have been excited with two types of sources： a laser diode （LD） and light-emitting diodes （LEDs） emitting in the UV and in the visible range. Total luminescence spectra were recorded by measuring the emission spectra in the range 350-720 nm at excitation wavelengths from 375 to 450 nm. The excitation-emission matrices have been obtained and two basic fluorescence regions in the visible have been outlined. On this basis the fluorescence spectra of the oils have been subdivided into three categories depending on the prevalence of the fluorescence maxima. The samples show differences in their fluorescence spectra. The latter fact shows that fluorescence spectroscopy can be used for the quick identification of edible oils. The fatty acid, the tocopherol, the beta-carotene and chlorophyll contents in the analyzed oils have been studied. It is shown that some of the types of oils differ significantly from each other by the first derivatives of their fluorescence spectra. There also exist color differences between the groups of vegetable oils under study.
