A high power collimated diode laser stack is carried out based on fast-axis collimation and stack packaging techniques. The module includes ten typical continuous wave （cw） bars and the total output power can be up ...A high power collimated diode laser stack is carried out based on fast-axis collimation and stack packaging techniques. The module includes ten typical continuous wave （cw） bars and the total output power can be up to 368W at 48.6A. Using a cylindrical lens as the collimation elements,we can make the fast-axis divergence and the slow-axis divergence are 0. 926 4° and 8. 206° respectively. The light emitting area is limited in a square area of 18.3 mm × 11 mm. The module has the advantage of high power density and offers a wide potential applications in pumping and material processing.展开更多
We have fabricated high speed 1.3μm InGaAsP/InP laser module with a CW 3-dB modulation bandwidth of 4 GHz under direct modulation and a threshold current less than 40 mA at room temperature.In this paper,the design,f...We have fabricated high speed 1.3μm InGaAsP/InP laser module with a CW 3-dB modulation bandwidth of 4 GHz under direct modulation and a threshold current less than 40 mA at room temperature.In this paper,the design,fabrication techniques and microwave package of module are described in detail,and the microwave and optoelectronic performances are discussed.展开更多
文摘A high power collimated diode laser stack is carried out based on fast-axis collimation and stack packaging techniques. The module includes ten typical continuous wave （cw） bars and the total output power can be up to 368W at 48.6A. Using a cylindrical lens as the collimation elements,we can make the fast-axis divergence and the slow-axis divergence are 0. 926 4° and 8. 206° respectively. The light emitting area is limited in a square area of 18.3 mm × 11 mm. The module has the advantage of high power density and offers a wide potential applications in pumping and material processing.
文摘We have fabricated high speed 1.3μm InGaAsP/InP laser module with a CW 3-dB modulation bandwidth of 4 GHz under direct modulation and a threshold current less than 40 mA at room temperature.In this paper,the design,fabrication techniques and microwave package of module are described in detail,and the microwave and optoelectronic performances are discussed.
