Gate current for pMOSFETs is composed of direct tunneling current,channel hot hole,electron injection current,and highly energetic hot holes by secondary impact ionization.The device degradation under V g=V d/2 is m...Gate current for pMOSFETs is composed of direct tunneling current,channel hot hole,electron injection current,and highly energetic hot holes by secondary impact ionization.The device degradation under V g=V d/2 is mainly caused by the injection of hot electrons by primary impact ionization and hot holes by secondary impact ionization,and the device lifetime is assumed to be inversely proportional to the hot holes,which is able to surmount Si-SiO 2 barrier and be injected into the gate oxide.A new lifetime prediction model is proposed on the basis and validated to agree well with the experiment.展开更多
基金国家重点基础研究发展计划 ( No.G2 0 0 0 0 3 65 0 3 ) Motorola Digital DNA Laboratory资助项目~~
文摘Gate current for pMOSFETs is composed of direct tunneling current,channel hot hole,electron injection current,and highly energetic hot holes by secondary impact ionization.The device degradation under V g=V d/2 is mainly caused by the injection of hot electrons by primary impact ionization and hot holes by secondary impact ionization,and the device lifetime is assumed to be inversely proportional to the hot holes,which is able to surmount Si-SiO 2 barrier and be injected into the gate oxide.A new lifetime prediction model is proposed on the basis and validated to agree well with the experiment.
