O484.5 2003032059多层膜样品的背散射/沟道、溅射剥层/背散射和二次离子质谱分析=Analysis of multilayer film using RBS/channeling,sputtering/RBS and SIMS[刊,中]/赵国庆（复旦大学现代物理研究所应用离子束物理实验室.上海（200...O484.5 2003032059多层膜样品的背散射/沟道、溅射剥层/背散射和二次离子质谱分析=Analysis of multilayer film using RBS/channeling,sputtering/RBS and SIMS[刊,中]/赵国庆（复旦大学现代物理研究所应用离子束物理实验室.上海（200433））,姜蕾…∥复旦学报.自然科学版.—2002,41（2）.—140-144用背散射/沟道、溅射剥层/背散射和二次离子质谱方法分析了分子束外延生长的Si/Ge<sub>x</sub>Si<sub>1-x</sub>多层膜。由2MeV<sup>4</sup>He<sup>+</sup>离子背散射/沟道分析。展开更多
The individual particles collected from a power station were analyzed by time of flight secondary ion mass spectrometry (TOF SIMS). The result indicates the presence of the polycyclic aromatic hydrocarbon (PAHs) as we...The individual particles collected from a power station were analyzed by time of flight secondary ion mass spectrometry (TOF SIMS). The result indicates the presence of the polycyclic aromatic hydrocarbon (PAHs) as well as the oxygenated one. They might be derived from the incomplete combustion of coals. SIMS has proved to be a rapid method for the qualitative analysis of PAHs and OPAHs absorbed on the aerosol particles. New perspectives for better understanding the SIMS spectra obtained from complex mixture such as environmental samples have been opened.展开更多
The Rutherford backscattering (RBS) spectra of N+-implanted GaAs are measured with a He+ ion beam of 2.1MeV. The backscattering yield along 【 100 】 aligned incidence increases with the increase in implanted doses. T...The Rutherford backscattering (RBS) spectra of N+-implanted GaAs are measured with a He+ ion beam of 2.1MeV. The backscattering yield along 【 100 】 aligned incidence increases with the increase in implanted doses. The depth profiles of nitrogen and arsenic are measured by secondary ion mass spectrometer (SIMS).The diffusion of nitrogen in the implanted layers is explained as interstitial migration. The damage is very severe during the ion implantation, and it can be recovered psrtly by annealing. The two-step annealing improves the effect obviously. The calculstion on distribution of damage shows that the recovery is proceeded from the inner side to the surface during the annealing. The mechanism of damage is discussed briefly.展开更多
文摘O484.5 2003032059多层膜样品的背散射/沟道、溅射剥层/背散射和二次离子质谱分析=Analysis of multilayer film using RBS/channeling,sputtering/RBS and SIMS[刊,中]/赵国庆（复旦大学现代物理研究所应用离子束物理实验室.上海（200433））,姜蕾…∥复旦学报.自然科学版.—2002,41（2）.—140-144用背散射/沟道、溅射剥层/背散射和二次离子质谱方法分析了分子束外延生长的Si/Ge<sub>x</sub>Si<sub>1-x</sub>多层膜。由2MeV<sup>4</sup>He<sup>+</sup>离子背散射/沟道分析。
文摘The individual particles collected from a power station were analyzed by time of flight secondary ion mass spectrometry (TOF SIMS). The result indicates the presence of the polycyclic aromatic hydrocarbon (PAHs) as well as the oxygenated one. They might be derived from the incomplete combustion of coals. SIMS has proved to be a rapid method for the qualitative analysis of PAHs and OPAHs absorbed on the aerosol particles. New perspectives for better understanding the SIMS spectra obtained from complex mixture such as environmental samples have been opened.
文摘The Rutherford backscattering (RBS) spectra of N+-implanted GaAs are measured with a He+ ion beam of 2.1MeV. The backscattering yield along 【 100 】 aligned incidence increases with the increase in implanted doses. The depth profiles of nitrogen and arsenic are measured by secondary ion mass spectrometer (SIMS).The diffusion of nitrogen in the implanted layers is explained as interstitial migration. The damage is very severe during the ion implantation, and it can be recovered psrtly by annealing. The two-step annealing improves the effect obviously. The calculstion on distribution of damage shows that the recovery is proceeded from the inner side to the surface during the annealing. The mechanism of damage is discussed briefly.
