A power management unit （PMU） chip supplying dual panel supply voltage, which has a low electro-magnetic interference （EMI） characteristic and is favorable for miniaturization, is designed. A two-phase charge pump...A power management unit （PMU） chip supplying dual panel supply voltage, which has a low electro-magnetic interference （EMI） characteristic and is favorable for miniaturization, is designed. A two-phase charge pump circuit using external pumping capacitor increases its pumping current and works out the charge-loss problem by using bulk-potential biasing circuit. A low-power start-up circuit is also proposed to reduce the power consumption of the band-gap reference voltage generator. And the ring oscillator used in the ELVSS power circuit is designed with logic devices by supplying the logic power supply to reduce the layout area. The PMU chip is designed with MagnaChip＇s 0.25 μ high-voltage process. The driving currents of ELVDD and ELVSS are more than 50 mA when a SPICE simulation is done.展开更多
A technology for the monolithic integration of resonant tunneling diodes （RTDs） and high electron mobility transistors （HEMTs） is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaA...A technology for the monolithic integration of resonant tunneling diodes （RTDs） and high electron mobility transistors （HEMTs） is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate. The RTD has a room temperature peak-to-valley ratio of 5.2 ： 1 with a peak current density of 22. 5kA/cm^2. The HEMT has a 1μm gate length with a - 1V threshold voltage. A logic circuit called a monostable-to-bistable transition logic element （MOBILE） circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz.展开更多
文摘A power management unit （PMU） chip supplying dual panel supply voltage, which has a low electro-magnetic interference （EMI） characteristic and is favorable for miniaturization, is designed. A two-phase charge pump circuit using external pumping capacitor increases its pumping current and works out the charge-loss problem by using bulk-potential biasing circuit. A low-power start-up circuit is also proposed to reduce the power consumption of the band-gap reference voltage generator. And the ring oscillator used in the ELVSS power circuit is designed with logic devices by supplying the logic power supply to reduce the layout area. The PMU chip is designed with MagnaChip＇s 0.25 μ high-voltage process. The driving currents of ELVDD and ELVSS are more than 50 mA when a SPICE simulation is done.
文摘A technology for the monolithic integration of resonant tunneling diodes （RTDs） and high electron mobility transistors （HEMTs） is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate. The RTD has a room temperature peak-to-valley ratio of 5.2 ： 1 with a peak current density of 22. 5kA/cm^2. The HEMT has a 1μm gate length with a - 1V threshold voltage. A logic circuit called a monostable-to-bistable transition logic element （MOBILE） circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz.
