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二维二硫化钼的性质及应用研究进展 被引量:1
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作者 罗娟娟 《化学工程师》 CAS 2023年第5期77-80,共4页
二硫化钼(MoS_(2))是一种节能材料,因其具有良好的光电催化性能在研究人员中备受青睐,并且获得了更为广阔的应用领域,为了实现节能降碳的目标,本文简要叙述了MoS_(2)的性质和制备方法,并对其可以发展和挖掘的设计方向进行评述,最后进行... 二硫化钼(MoS_(2))是一种节能材料,因其具有良好的光电催化性能在研究人员中备受青睐,并且获得了更为广阔的应用领域,为了实现节能降碳的目标,本文简要叙述了MoS_(2)的性质和制备方法,并对其可以发展和挖掘的设计方向进行评述,最后进行了总结和对此领域的应用前景的展望。 展开更多
关键词 二维二硫化钼 催化 氧化碳 应用
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二维二硫化钼制备及其对聚碳酸酯热稳定性改性研究 被引量:2
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作者 杨海艳 李延斌 +4 位作者 陈晓勇 熊继军 余佳照 刘壮 董帅 《应用化工》 CAS CSCD 北大核心 2019年第5期1026-1030,共5页
采用液相超声剥离法对块状MoS_2进行剥离,制备片层较薄的MoS_2纳米片,与工程塑料聚碳酸酯(PC)通过溶液共混法制备PC/MoS_2纳米复合材料,通过红外(FTIR)、热重分析(TG)和差示扫描量热仪(DSC)等对复合材料的微观结构和热稳定性进行分析。... 采用液相超声剥离法对块状MoS_2进行剥离,制备片层较薄的MoS_2纳米片,与工程塑料聚碳酸酯(PC)通过溶液共混法制备PC/MoS_2纳米复合材料,通过红外(FTIR)、热重分析(TG)和差示扫描量热仪(DSC)等对复合材料的微观结构和热稳定性进行分析。结果表明,添加MoS_2纳米片可以有效改善PC的热稳定性。 展开更多
关键词 二维二硫化钼纳米片 聚碳酸酯 纳米复合材料 液相超声剥离
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二硫化钼二维原子晶体化学掺杂研究进展 被引量:6
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作者 邢垒 焦丽颖 《物理化学学报》 SCIE CAS CSCD 北大核心 2016年第9期2133-2145,共13页
以二硫化钼(MoS_2)为代表的半导体二维过渡金属硫族化合物(TMDCs)具有优异的光电特性,在新型电子器件领域展示出广阔的应用前景。二维MoS_2的性能调控与功能协同是实现其在电子器件领域实用化的关键。化学掺杂是调控二维MoS_2的性能并... 以二硫化钼(MoS_2)为代表的半导体二维过渡金属硫族化合物(TMDCs)具有优异的光电特性,在新型电子器件领域展示出广阔的应用前景。二维MoS_2的性能调控与功能协同是实现其在电子器件领域实用化的关键。化学掺杂是调控二维MoS_2的性能并丰富其材料特性最为直接而有效的方法之一。本文重点介绍了基于表面电荷转移、面内取代以及层间插层策略的掺杂方法,讨论了各种掺杂方法的基本原理、最新进展以及局限性,最后展望了二维MoS_2掺杂研究面临的挑战与发展方向。 展开更多
关键词 二维二硫化钼 化学掺杂 表面吸附 面内取代 插层
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Threshold voltage modulation in monolayer MoS_(2) field-effect transistors via selective gallium ion beam irradiation 被引量:1
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作者 Baoshan Tang Yunshan Zhao +7 位作者 Changjie Zhou Mingkun Zhang Huili Zhu Yida Li Jin Feng Leong Hao Shuai Hao Gong Weifeng Yang 《Science China Materials》 SCIE EI CAS CSCD 2022年第3期741-747,共7页
Electronic regulation of two-dimensional(2 D)transition metal dichalcogenides(TMDCs)is a crucial step towards next-generation optoelectronics and electronics.Here,we demonstrate controllable and selective-area defect ... Electronic regulation of two-dimensional(2 D)transition metal dichalcogenides(TMDCs)is a crucial step towards next-generation optoelectronics and electronics.Here,we demonstrate controllable and selective-area defect engineering in 2D molybdenum disulfide(MoS_(2))using a focused ion beam with a low-energy gallium ion(Ga^(+))source.We find that the surface defects of MoS_(2)can be tuned by the precise control of ion energy and dose.Furthermore,the fieldeffect transistors based on the monolayer MoS_(2)show a significant threshold voltage modulation over 70 V after Ga+irradiation.First-principles calculations reveal that the Ga impurities in the monolayer MoS_(2)introduce a defect state near the Fermi level,leading to a shallow acceptor level of 0.25 eV above the valence band maximum.This defect engineering strategy enables direct writing of complex pattern at the atomic length scale in a controlled and facile manner,tailoring the electronic properties of 2D TMDCs for novel devices. 展开更多
关键词 two-dimensional transition metal dichalcogenides field-effect transistors defect engineering Ga ion irradiation
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Independent thickness and lateral size sorting of two-dimensional materials 被引量:1
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作者 Minsu Liu Chuang Yang +2 位作者 Ling Qiu Hui-Ming Cheng Bilu Liu 《Science China Materials》 SCIE EI CAS CSCD 2021年第11期2739-2746,共8页
Two-dimensional(2D)materials possess unique thickness-and lateral-size-dependent properties.Many efforts have been devoted to obtaining 2D materials with narrow structure heterogeneity while it is still challenging to... Two-dimensional(2D)materials possess unique thickness-and lateral-size-dependent properties.Many efforts have been devoted to obtaining 2D materials with narrow structure heterogeneity while it is still challenging to independently control their thickness and lateral size,limiting their widespread applications.Here,we develop a three-step method which achieves independent thickness and lateral size sorting of 2D materials.Taking 2D h-BN flakes as an example,their thickness and lateral size are independently sorted to different fractions with thicknesses smaller than 6 nm.In addition,the 2D h-BN flakes possess narrow distributions of both thickness and lateral size.We further develop a force field extraction method and achieve scalable size sorting of 2D h-BN,which is universal for sorting other 2D materials including MoS2 and graphene oxide.This work reports an effective method to produce structure homogenous 2D materials and will help fundamental studies and applications of 2D materials where thickness and lateral size are of concern. 展开更多
关键词 two-dimensional materials SORTING H-BN MoS2 graphene oxide thickness lateral size
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