A Si doped AlGaN/GaN HEMT structure with high Al content (x=43%) in the barrier layer is grown on sapphire substrate by RF-MBE.The structural and electrical properties of the heterostructure are investigated by the tr...A Si doped AlGaN/GaN HEMT structure with high Al content (x=43%) in the barrier layer is grown on sapphire substrate by RF-MBE.The structural and electrical properties of the heterostructure are investigated by the triple axis X-ray diffraction and Van der Pauw-Hall measurement,respectively.The observed prominent Bragg peaks of the GaN and AlGaN and the Hall results show that the structure is of high quality with smooth interface.The high 2DEG mobility in excess of 1260cm2/(V·s) is achieved with an electron density of 1.429×10 13cm -2 at 297K,corresponding to a sheet-density-mobility product of 1.8×10 16V -1·s -1.Devices based on the structure are fabricated and characterized.Better DC characteristics,maximum drain current of 1.0A/mm and extrinsic transconductance of 218mS/mm are obtained when compared with HEMTs fabricated using structures with lower Al mole fraction in the AlGaN barrier layer.The results suggest that the high Al content in the AlGaN barrier layer is promising in improving material electrical properties and device performance.展开更多
Two-dimensional （2D） materials are highly promising for flexible electronics, and graphene is the only well-studied transparent conductor. Herein, density functional theory has been used to explore a new transparent...Two-dimensional （2D） materials are highly promising for flexible electronics, and graphene is the only well-studied transparent conductor. Herein, density functional theory has been used to explore a new transparent conducting material via adsorption of H on a 2D β-GaS sheet. This adsorption results in geometrical changes to the local structures around the H. The calculated electronic structures reveal metallic characteristics of the 2D α-GaS material upon H adsorption and a large optical band gap of 2.72 eV with a significant Burstein-Moss shift of 0.67 eVo The simulated electrical resistivity is as low as 10^-4 Ω.cm, comparable to the benchmark for ITO thin films.展开更多
文摘A Si doped AlGaN/GaN HEMT structure with high Al content (x=43%) in the barrier layer is grown on sapphire substrate by RF-MBE.The structural and electrical properties of the heterostructure are investigated by the triple axis X-ray diffraction and Van der Pauw-Hall measurement,respectively.The observed prominent Bragg peaks of the GaN and AlGaN and the Hall results show that the structure is of high quality with smooth interface.The high 2DEG mobility in excess of 1260cm2/(V·s) is achieved with an electron density of 1.429×10 13cm -2 at 297K,corresponding to a sheet-density-mobility product of 1.8×10 16V -1·s -1.Devices based on the structure are fabricated and characterized.Better DC characteristics,maximum drain current of 1.0A/mm and extrinsic transconductance of 218mS/mm are obtained when compared with HEMTs fabricated using structures with lower Al mole fraction in the AlGaN barrier layer.The results suggest that the high Al content in the AlGaN barrier layer is promising in improving material electrical properties and device performance.
基金This work was financially supported by National University of Singapore, Ministry of Education of Singapore, Ministry of Defence of Singapore, National Research Foundation of Singapore and National Natural Science Foundation of China （Nos. 21233006 and 21473164）.
文摘Two-dimensional （2D） materials are highly promising for flexible electronics, and graphene is the only well-studied transparent conductor. Herein, density functional theory has been used to explore a new transparent conducting material via adsorption of H on a 2D β-GaS sheet. This adsorption results in geometrical changes to the local structures around the H. The calculated electronic structures reveal metallic characteristics of the 2D α-GaS material upon H adsorption and a large optical band gap of 2.72 eV with a significant Burstein-Moss shift of 0.67 eVo The simulated electrical resistivity is as low as 10^-4 Ω.cm, comparable to the benchmark for ITO thin films.
