By complementing the equivalent oxide thickness （EOT） of a 1.7nm nitride/oxynitride （N/O） stack gate dielectric （EOT- 1.7nm） with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length a...By complementing the equivalent oxide thickness （EOT） of a 1.7nm nitride/oxynitride （N/O） stack gate dielectric （EOT- 1.7nm） with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. The key technologies adopted to restrain SCE and to improve drive ability include a 1.7nm N/O stack gate dielectric, non-CMP planarization technology, a T-type refractory W/TiN metal stack gate electrode, and a novel super steep retrograde channel doping using heavy ion implantation and a double sidewall scheme. Using these optimized key technologies, high performance 95nm metal gate CMOS devices with excellent SCE and good driving ability are fabricated. Under power supply voltages of VDS ± 1.5V and VGS± 1.8V,drive currents of 679μA/μm for nMOS and - 327μA/μm for pMOS are obtained. A subthreshold slope of 84.46mV/dec, DIBL of 34.76mV/V, and Vth of 0.26V for nMOS, and a subthreshold slope of 107.4mV/dec,DIBL of 54.46mV/V, and Vth of 0.27V for pMOS are achieved. These results show that the combined technology has indeed thoroughly eliminated the boron penetration phenomenon and polysilicon depletion effect ,effectively reduced gate tunneling leakage, and improved device reliability.展开更多
Improved surgical techniques and greater efficacy of new anti-rejection drugs have significantly improved the survival of patients undergoing orthotopic liver transplantation(OLT). This has led to an increased inciden...Improved surgical techniques and greater efficacy of new anti-rejection drugs have significantly improved the survival of patients undergoing orthotopic liver transplantation(OLT). This has led to an increased incidence of metabolic disorders as well as cardiovascular and cerebrovascular diseases as causes of morbidity and mortality in OLT patients. In the last decade, several studies have examined which predisposing factors lead to increased cardiovascular risk(i.e., age, ethnicity, diabetes, NASH, atrial fibrillation, and some echocardiographic parameters) as well as which factors after OLT(i.e., weight gain, metabolic syndrome, immunosuppressive therapy, and renal failure) are linked to increased cardiovascular mortality. However, currently, there are no available data that evaluate the development of atherosclerotic damage after OLT. The awareness of high cardiovascular risk after OLT has not only lead to the definition of new but generally not accepted screening of high risk patients before transplantation, but also to the need for careful patient follow up and treatment to control metabolic and cardiovascular pathologies after transplant. Prospective studies are needed to better define the predisposing factors for recurrence and de novo occurrence of metabolic alterations responsible for cardiovascular damage after OLT. Moreover, such studies will help to identify the timing of disease progression and damage,which in turn may help to prevent morbidity and mortality for cardiovascular diseases. Our preliminary results show early occurrence of atherosclerotic damage, which is already present a few weeks following OLT, suggesting that specific, patient-tailored therapies should be started immediately post OLT.展开更多
The present article deals with thermally stratified stagnation-point flow saturated in porous medium on surface of variable thickness along with more convincing and reliable surface condition termed as melting heat tr...The present article deals with thermally stratified stagnation-point flow saturated in porous medium on surface of variable thickness along with more convincing and reliable surface condition termed as melting heat transfer.Homogeneous–heterogeneous reaction and radiative effects have been further taken into account to reconnoiterproperties of heat transfer.Melting heat transfer and phenomenon of homogeneous–heterogeneous reaction have engrossed widespread utilization in purification of metals,welding process,electroslag melting,biochemical systems,catalysis and several industrial developments.Suitable transformations are utilized to attain a scheme of ordinary differential equations possessing exceedingly nonlinear nature.Homotopic process is employed to develop convergent solutions of the resulting problem.Discussion regarding velocity,thermal field and concentration distribution for several involved parameters is pivotal part.Graphical behaviors of skin friction coefficient and Nusselt number are also portrayed.Concentration of the reactants is found to depreciate as a result of strength of both heterogeneous and homogeneous reaction parameters.With existence of melting phenomenon,declining attitude of fluid temperature is observed for higher radiation parameter.展开更多
In this paper,the pentacene-based organic field-effect transistors(OFETs)with poly(methyl methacrylate)(PMMA)as gate dielectrics were fabricated,and the effects of gate dielectric thickness and semiconductor thickness...In this paper,the pentacene-based organic field-effect transistors(OFETs)with poly(methyl methacrylate)(PMMA)as gate dielectrics were fabricated,and the effects of gate dielectric thickness and semiconductor thickness on the device performance were investigated.The optimal PMMA thickness is in the range of 350–400 nm to sustain a considerable current density and stable performance.The device performance depends on the thicknesses of the active layer non-monotonically,which can be explained by the morphology of the pentacene film and the position of the conducting channel in the active layer.The device with a pentacene thickness of 50 nm shows the best performance,which has a maximum hole mobility of 1.12 cm2/V·s.In addition,the introduction of a thin layer of tris-(8-hydroxyquinolinato)aluminum(Alq3)to the OFETs as a light-emitting material greatly decreases the device performance.展开更多
文摘By complementing the equivalent oxide thickness （EOT） of a 1.7nm nitride/oxynitride （N/O） stack gate dielectric （EOT- 1.7nm） with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. The key technologies adopted to restrain SCE and to improve drive ability include a 1.7nm N/O stack gate dielectric, non-CMP planarization technology, a T-type refractory W/TiN metal stack gate electrode, and a novel super steep retrograde channel doping using heavy ion implantation and a double sidewall scheme. Using these optimized key technologies, high performance 95nm metal gate CMOS devices with excellent SCE and good driving ability are fabricated. Under power supply voltages of VDS ± 1.5V and VGS± 1.8V,drive currents of 679μA/μm for nMOS and - 327μA/μm for pMOS are obtained. A subthreshold slope of 84.46mV/dec, DIBL of 34.76mV/V, and Vth of 0.26V for nMOS, and a subthreshold slope of 107.4mV/dec,DIBL of 54.46mV/V, and Vth of 0.27V for pMOS are achieved. These results show that the combined technology has indeed thoroughly eliminated the boron penetration phenomenon and polysilicon depletion effect ,effectively reduced gate tunneling leakage, and improved device reliability.
文摘Improved surgical techniques and greater efficacy of new anti-rejection drugs have significantly improved the survival of patients undergoing orthotopic liver transplantation(OLT). This has led to an increased incidence of metabolic disorders as well as cardiovascular and cerebrovascular diseases as causes of morbidity and mortality in OLT patients. In the last decade, several studies have examined which predisposing factors lead to increased cardiovascular risk(i.e., age, ethnicity, diabetes, NASH, atrial fibrillation, and some echocardiographic parameters) as well as which factors after OLT(i.e., weight gain, metabolic syndrome, immunosuppressive therapy, and renal failure) are linked to increased cardiovascular mortality. However, currently, there are no available data that evaluate the development of atherosclerotic damage after OLT. The awareness of high cardiovascular risk after OLT has not only lead to the definition of new but generally not accepted screening of high risk patients before transplantation, but also to the need for careful patient follow up and treatment to control metabolic and cardiovascular pathologies after transplant. Prospective studies are needed to better define the predisposing factors for recurrence and de novo occurrence of metabolic alterations responsible for cardiovascular damage after OLT. Moreover, such studies will help to identify the timing of disease progression and damage,which in turn may help to prevent morbidity and mortality for cardiovascular diseases. Our preliminary results show early occurrence of atherosclerotic damage, which is already present a few weeks following OLT, suggesting that specific, patient-tailored therapies should be started immediately post OLT.
文摘The present article deals with thermally stratified stagnation-point flow saturated in porous medium on surface of variable thickness along with more convincing and reliable surface condition termed as melting heat transfer.Homogeneous–heterogeneous reaction and radiative effects have been further taken into account to reconnoiterproperties of heat transfer.Melting heat transfer and phenomenon of homogeneous–heterogeneous reaction have engrossed widespread utilization in purification of metals,welding process,electroslag melting,biochemical systems,catalysis and several industrial developments.Suitable transformations are utilized to attain a scheme of ordinary differential equations possessing exceedingly nonlinear nature.Homotopic process is employed to develop convergent solutions of the resulting problem.Discussion regarding velocity,thermal field and concentration distribution for several involved parameters is pivotal part.Graphical behaviors of skin friction coefficient and Nusselt number are also portrayed.Concentration of the reactants is found to depreciate as a result of strength of both heterogeneous and homogeneous reaction parameters.With existence of melting phenomenon,declining attitude of fluid temperature is observed for higher radiation parameter.
基金supported by the National Natural Science Foundation of China(Grant Nos.61177017,61275175,61036007,61377028,and 61077022)National Science Foundation for Distinguished Young Scholars of China(Grant No.61125505)the"111" Project of China(Grant No.B08002)
文摘In this paper,the pentacene-based organic field-effect transistors(OFETs)with poly(methyl methacrylate)(PMMA)as gate dielectrics were fabricated,and the effects of gate dielectric thickness and semiconductor thickness on the device performance were investigated.The optimal PMMA thickness is in the range of 350–400 nm to sustain a considerable current density and stable performance.The device performance depends on the thicknesses of the active layer non-monotonically,which can be explained by the morphology of the pentacene film and the position of the conducting channel in the active layer.The device with a pentacene thickness of 50 nm shows the best performance,which has a maximum hole mobility of 1.12 cm2/V·s.In addition,the introduction of a thin layer of tris-(8-hydroxyquinolinato)aluminum(Alq3)to the OFETs as a light-emitting material greatly decreases the device performance.
