In this study,(100)-oriented growth of Ba_(0.5)Sr_(0.5)TiO_3(BST)/LaNiO_3(LNO) stacks was obtained on Pt(111)/SiO_2/Si substrates by r.f.magnetron sputtering.The orientation of the subsequently deposited Ba_(0.5)Sr_(0...In this study,(100)-oriented growth of Ba_(0.5)Sr_(0.5)TiO_3(BST)/LaNiO_3(LNO) stacks was obtained on Pt(111)/SiO_2/Si substrates by r.f.magnetron sputtering.The orientation of the subsequently deposited Ba_(0.5)Sr_(0.5)TiO_3 thin film was strongly affected by the LNO under layer,and the BST thin film deposited on the(100)LNO-coated Si substrate was also found to have a significant(100)-oriented texture.Effects of LNO interlayer on the dielectric properties of BST thin films were investigated.As a result,the tunability of BST thin film was greatly improved with the insertion of(100)-oriented LNO under layer with proper thickness.展开更多
SrTiO3 films with different cation concentration were deposited on Si（001） substrates by oxide molecular beam epitaxy. An amorphous layer was observed at the interface whose thickness depends on the oxygen pressure ...SrTiO3 films with different cation concentration were deposited on Si（001） substrates by oxide molecular beam epitaxy. An amorphous layer was observed at the interface whose thickness depends on the oxygen pressure and the substrate temperature during growth. Although lowering the oxygen vacancy concentration in SrTiO3 led to better insulating performance as indi- cated by the lowered leakage current density of the heterostructure, the dielectric performance was deteriorated because of the thickened interracial layer that dominated the capacitance of SrTiO3/Si heterostructure. Instead of adjusting the oxygen vacan- cy concentration, we propose that controlling the film cation concentration is an effective way to tune the dielectric and insu- lating properties of SrTiO3/Si at the same time.展开更多
基金the National Key Lab of Nano/Micro Fabrication Technology(No.9140C 790310060C79)the National Natural Science Foundation of China(No.60701012)
文摘In this study,(100)-oriented growth of Ba_(0.5)Sr_(0.5)TiO_3(BST)/LaNiO_3(LNO) stacks was obtained on Pt(111)/SiO_2/Si substrates by r.f.magnetron sputtering.The orientation of the subsequently deposited Ba_(0.5)Sr_(0.5)TiO_3 thin film was strongly affected by the LNO under layer,and the BST thin film deposited on the(100)LNO-coated Si substrate was also found to have a significant(100)-oriented texture.Effects of LNO interlayer on the dielectric properties of BST thin films were investigated.As a result,the tunability of BST thin film was greatly improved with the insertion of(100)-oriented LNO under layer with proper thickness.
基金supported by the National Basic Research Program of China(Grant No.2012CB921700)the National Natural Science Foundation of China(Grant No.11225422)the US Natural Science Foundation(Grant No.DMR-1106070)
文摘SrTiO3 films with different cation concentration were deposited on Si（001） substrates by oxide molecular beam epitaxy. An amorphous layer was observed at the interface whose thickness depends on the oxygen pressure and the substrate temperature during growth. Although lowering the oxygen vacancy concentration in SrTiO3 led to better insulating performance as indi- cated by the lowered leakage current density of the heterostructure, the dielectric performance was deteriorated because of the thickened interracial layer that dominated the capacitance of SrTiO3/Si heterostructure. Instead of adjusting the oxygen vacan- cy concentration, we propose that controlling the film cation concentration is an effective way to tune the dielectric and insu- lating properties of SrTiO3/Si at the same time.
