An innovative physical simulation apparatus, including high speed camera, red thermal imaging system, and mechanical quantity sensor, was used to investigate the friction heat generation and atom diffusion behavior du...An innovative physical simulation apparatus, including high speed camera, red thermal imaging system, and mechanical quantity sensor, was used to investigate the friction heat generation and atom diffusion behavior during Mg-Ti friction welding process. The results show that the friction coefficient mainly experiences two steady stages. The first steady stage corresponds to the Coulomb friction with material abrasion. The second steady stage corresponds to the stick friction with fully plastic flow. Moreover, the increasing rates of axial displacement, temperature and friction coefficient are obviously enhanced with the increase of rotation speed and axial pressure. It can also be found that the there exists rapid diffusion phenomenon in the Mg-Ti friction welding system. The large deformation activated diffusion coefficient is about 105 higher than that activated by thermal.展开更多
Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxi...Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxidation and etching off the oxide layer,a one dimensional Si quantum wire can be converted into several quantum dots inside quantum wire in connection with the source and drain regions.The differential conductance (d I ds /d V ds ) oscillations and the Coulomb staircases in the source drain current ( I ds ) are shown clearly dependent on the source drain voltage at 5 3K.The I ds V gs (gate voltage) oscillations are observed from the I ds V gs characteristics as a function of V gs at different temperatures and various values of V ds .For a SET whose total capacitance is about 9 16aF,the I ds V gs oscillations can be observed at 77K.展开更多
Based on the orthodox theory,a model of a single electron transistor （SET） of metallic tunneling junctions is built using the master equation method. Several parameters of the device, such as capacitance, resistance...Based on the orthodox theory,a model of a single electron transistor （SET） of metallic tunneling junctions is built using the master equation method. Several parameters of the device, such as capacitance, resistance and temperature,are input into the model and thus the I-V curves are attained. These curves are consistent with those from other experiments; therefore, the model is verified. However, there still exists a difference between simulated results and experimental results,mainly comes from the stationary case of the master equation. In other words, precision of simulated results would be increased if the transient case of the master equation is considered. Moreover, the current increases exponentially at higher drain voltages, which is due to the fact that the barrier suppression is caused by the image charge potential.展开更多
The electrochemical behavior of lithium incorporated in aluminum electrode in LiTFSI/KTf （lithium bis （trifluoromethylsulfonyl） amide/CF3SO3K） molten salt electrolyte was studied by a variety of electrochemical te...The electrochemical behavior of lithium incorporated in aluminum electrode in LiTFSI/KTf （lithium bis （trifluoromethylsulfonyl） amide/CF3SO3K） molten salt electrolyte was studied by a variety of electrochemical techniques including cyclic voltammetry, chronopotentiometry and chronoamperometry. The reduction reaction is found involving a nucleation process on the aluminum electrode. The results of chronopotentiometry indicate that the process of lithium incorporation in aluminum is smooth and uniform. The galvanostatic cycle experiments show that the coulombic efficiency is very low in the first cycle, which is mainly due to the ＂retention capacity＂ of Li-Al alloys. This characteristic is testified by the results of XRD and SEM. The results of chronoamperometry indicate that the incorporation of lithium into aluminum for the formation of a-phase Li-Al alloy is limited by its diffusion rate, with a measured diffusion coefficient of 1.8× 10^-10 cm2/s.展开更多
Based on the kinetic theoretical Vlasov-Poisson equation, a surface Coulomb explosion model of SiO2 material induced by ultra-short pulsed laser radiation is established. The non-equilibrium free electron distribution...Based on the kinetic theoretical Vlasov-Poisson equation, a surface Coulomb explosion model of SiO2 material induced by ultra-short pulsed laser radiation is established. The non-equilibrium free electron distribution resulting from the two mechanisms of multi-photon ionization and avalanche ionization is computed. A quantitative analysis is given to describe the Coulomb explosion induced by the self-consistent electric field, and the impact of the parameters of laser pulses on the surface ablation is also discussed. The results show that the electron relaxation time is not constant, but it is related to the microscopic state of the electrons, so the relaxation time approximation is not available on the femtosecond time scale. The ablation depths computed by the theoretical model are in good agreement with the experimental results in the range of pulse durations from 0 to 1 ps.展开更多
基金Projects (51101126, 51071123) supported by the National Natural Science Foundation of ChinaProjects (20110491684, 2012T50817) supported by the China Postdoctoral Science FoundationProject (20110942K) supported by the Open Fund of State Key Laboratory of Powder Metallurgy of Central South University, China
文摘An innovative physical simulation apparatus, including high speed camera, red thermal imaging system, and mechanical quantity sensor, was used to investigate the friction heat generation and atom diffusion behavior during Mg-Ti friction welding process. The results show that the friction coefficient mainly experiences two steady stages. The first steady stage corresponds to the Coulomb friction with material abrasion. The second steady stage corresponds to the stick friction with fully plastic flow. Moreover, the increasing rates of axial displacement, temperature and friction coefficient are obviously enhanced with the increase of rotation speed and axial pressure. It can also be found that the there exists rapid diffusion phenomenon in the Mg-Ti friction welding system. The large deformation activated diffusion coefficient is about 105 higher than that activated by thermal.
文摘Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxidation and etching off the oxide layer,a one dimensional Si quantum wire can be converted into several quantum dots inside quantum wire in connection with the source and drain regions.The differential conductance (d I ds /d V ds ) oscillations and the Coulomb staircases in the source drain current ( I ds ) are shown clearly dependent on the source drain voltage at 5 3K.The I ds V gs (gate voltage) oscillations are observed from the I ds V gs characteristics as a function of V gs at different temperatures and various values of V ds .For a SET whose total capacitance is about 9 16aF,the I ds V gs oscillations can be observed at 77K.
文摘Based on the orthodox theory,a model of a single electron transistor （SET） of metallic tunneling junctions is built using the master equation method. Several parameters of the device, such as capacitance, resistance and temperature,are input into the model and thus the I-V curves are attained. These curves are consistent with those from other experiments; therefore, the model is verified. However, there still exists a difference between simulated results and experimental results,mainly comes from the stationary case of the master equation. In other words, precision of simulated results would be increased if the transient case of the master equation is considered. Moreover, the current increases exponentially at higher drain voltages, which is due to the fact that the barrier suppression is caused by the image charge potential.
基金Project (70510011) supported by Scientific Research Starting Foundation of Jiaxing University,ChinaProject (84209001B3) supported by Open Fund of Key Laboratory of Clean Chemical Process of Jiaxing,China
文摘The electrochemical behavior of lithium incorporated in aluminum electrode in LiTFSI/KTf （lithium bis （trifluoromethylsulfonyl） amide/CF3SO3K） molten salt electrolyte was studied by a variety of electrochemical techniques including cyclic voltammetry, chronopotentiometry and chronoamperometry. The reduction reaction is found involving a nucleation process on the aluminum electrode. The results of chronopotentiometry indicate that the process of lithium incorporation in aluminum is smooth and uniform. The galvanostatic cycle experiments show that the coulombic efficiency is very low in the first cycle, which is mainly due to the ＂retention capacity＂ of Li-Al alloys. This characteristic is testified by the results of XRD and SEM. The results of chronoamperometry indicate that the incorporation of lithium into aluminum for the formation of a-phase Li-Al alloy is limited by its diffusion rate, with a measured diffusion coefficient of 1.8× 10^-10 cm2/s.
文摘Based on the kinetic theoretical Vlasov-Poisson equation, a surface Coulomb explosion model of SiO2 material induced by ultra-short pulsed laser radiation is established. The non-equilibrium free electron distribution resulting from the two mechanisms of multi-photon ionization and avalanche ionization is computed. A quantitative analysis is given to describe the Coulomb explosion induced by the self-consistent electric field, and the impact of the parameters of laser pulses on the surface ablation is also discussed. The results show that the electron relaxation time is not constant, but it is related to the microscopic state of the electrons, so the relaxation time approximation is not available on the femtosecond time scale. The ablation depths computed by the theoretical model are in good agreement with the experimental results in the range of pulse durations from 0 to 1 ps.
