This paper describes a 3.0V, 10b,40Msample/s analog-to-digital converter （ADC） fabricated in a 0.25μm CMOS technology. Through the sharing an amplifier between two successive pipeline stages, the converter is reali...This paper describes a 3.0V, 10b,40Msample/s analog-to-digital converter （ADC） fabricated in a 0.25μm CMOS technology. Through the sharing an amplifier between two successive pipeline stages, the converter is realized using just four amplifiers with a separate sample-and-hold block. It employs two key techniques： a high bandwidth low-power gain-boosting telescopic amplifiers technique and a low power low offset dynamic comparators technique.The ADC achieves a 8.1 effective number of bits,a maximum differential nonlinearity of a 0.85 least significant bit（LSB）, and maximum integral nonlinearity of 2.2LSB for a 0.5MHz input at full sampling rate. It occupies 1.24mm^2 ,which also includes a bandgap and a voltage reference circuit and dissipates only 59mW.展开更多
文摘This paper describes a 3.0V, 10b,40Msample/s analog-to-digital converter （ADC） fabricated in a 0.25μm CMOS technology. Through the sharing an amplifier between two successive pipeline stages, the converter is realized using just four amplifiers with a separate sample-and-hold block. It employs two key techniques： a high bandwidth low-power gain-boosting telescopic amplifiers technique and a low power low offset dynamic comparators technique.The ADC achieves a 8.1 effective number of bits,a maximum differential nonlinearity of a 0.85 least significant bit（LSB）, and maximum integral nonlinearity of 2.2LSB for a 0.5MHz input at full sampling rate. It occupies 1.24mm^2 ,which also includes a bandgap and a voltage reference circuit and dissipates only 59mW.
