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超大电流密度低压二极管研究 被引量:2
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作者 张斌 张海涛 王均平 《半导体技术》 CAS CSCD 北大核心 2002年第10期68-72,共5页
论述了低压大电流行业所用整流二极管的超大电流密度、超低功耗设计的重要性。介绍了设计方法、工艺措施及实验结果。分析表明,只要保证基区宽度不大于小电流下的载流子扩散长度,保证足够的表面扩散浓度,就能保证二极管在1000A/cm2的特... 论述了低压大电流行业所用整流二极管的超大电流密度、超低功耗设计的重要性。介绍了设计方法、工艺措施及实验结果。分析表明,只要保证基区宽度不大于小电流下的载流子扩散长度,保证足够的表面扩散浓度,就能保证二极管在1000A/cm2的特大电流密度下仍有很低的压降。 展开更多
关键词 超大电流密度 低压二极管 低电压 整流二极管
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Effects of transparent MPTMS/Ag/MoO_3 structure as anode on the performance of green organic light-emitting diodes
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作者 胡俊涛 邓亚飞 +1 位作者 梅文娟 杨劲松 《Optoelectronics Letters》 EI 2015年第5期333-337,共5页
A transparent 3-mercaptopropyl trimethoxysilane(MPTMS)/Ag/MoO3 composite anode is introduced to fabricate green organic light-emitting diodes(OLEDs). Effects of the composite anode on brightness and operating voltage ... A transparent 3-mercaptopropyl trimethoxysilane(MPTMS)/Ag/MoO3 composite anode is introduced to fabricate green organic light-emitting diodes(OLEDs). Effects of the composite anode on brightness and operating voltage of OLEDs are researched. By optimizing the thickness of each layer of the MPTMS/Ag/MoO3 structure, the transmittance of MPTMS/Ag(8 nm)/Mo O3(30 nm) reaches over 75% at about 520 nm. The sheet resistance is 3.78 ?/□, corresponding to this MPTMS/Ag(8 nm)/MoO3(30 nm) structure. For the OLEDs with the optimized anode, the maximum electroluminescence(EL) current efficiency reaches 4.5 cd/A, and the maximum brightness is 37 036 cd/m2. Moreover, the OLEDs with the optimized anode exhibit a very low operating voltage(2.6 V) for obtaining brightness of 100 cd/m2. We consider that the improved device performance is mainly attributed to the enhanced hole injection resulting from the reduced hole injection barrier height. Our results indicate that employing the MPTMS/Ag/MoO3 as a composite anode can be a simple and promising technique in the fabrication of low-operating voltage and high-brightness OLEDs. 展开更多
关键词 anode brightness fabrication attributed reaches fabricate transparent transmittance optimizing interlayer
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