A 1.8V 8b 125Msample/s pipelined A/D converter is presented.Power efficiency is optimized by size scaling down scheme using low power single stage cascode amplifier with a gain boosted structure.Global clock tree and ...A 1.8V 8b 125Msample/s pipelined A/D converter is presented.Power efficiency is optimized by size scaling down scheme using low power single stage cascode amplifier with a gain boosted structure.Global clock tree and local generators are employed to avoid loss and overlap of clock period.The ADC achieves a signal-to-noise-and-distortion ratio (SNDR) of 49.5dB(7.9ENOB) for an input of 62MHz at full speed of 125MHz,consuming only 71mW.It is implemented in 0.18μm CMOS technology with a core area of 0.45mm 2.展开更多
This work demonstrates that the ΣΔ modulator with a low oversampling ratio is a viable option for the high-resolution digitization in a low-voltage environment.Low power dissipation is achieved by designing a low-OS...This work demonstrates that the ΣΔ modulator with a low oversampling ratio is a viable option for the high-resolution digitization in a low-voltage environment.Low power dissipation is achieved by designing a low-OSR modulator based on differential cascade architecture,while large signal swing maintained to achieve a high dynamic range in the low-voltage environment.Operating from a voltage supply of 1.8V,the sixth-order cascade modulator at a sampling frequency of 4-MHz with an OSR of 24 achieves a dynamic range of 81dB for a 80-kHz test signal,while dissipating only 5mW.展开更多
This paper presents a low-voltage low-power variable gain amplifier,which is applied in the automatic gain control loop of a super heterodyne receiver. Six stages are cascaded to provide an 81dB digitally controlled g...This paper presents a low-voltage low-power variable gain amplifier,which is applied in the automatic gain control loop of a super heterodyne receiver. Six stages are cascaded to provide an 81dB digitally controlled gain range in a 3dB step. The gain step error is less than 0.5dB. It operates at an intermediate frequency of 300kHz, and the power consumption is 1.35mW from a 1.8V supply. The prototype chip is implemented in a TSMC＇s 0.18μm 1P6M CMOS process and occupies approximately 0.24mm^2 . It is very suitable for portable wire- less communication systems. The measurement results agree well with the system requirements.展开更多
This paper presents a low voltage, low power RF/analog front-end circuit for passive ultra high frequency （UHF） radio frequency identification （RFID） tags. Temperature compensation is achieved by a reference gener...This paper presents a low voltage, low power RF/analog front-end circuit for passive ultra high frequency （UHF） radio frequency identification （RFID） tags. Temperature compensation is achieved by a reference generator using sub-threshold techniques. The chip maintains a steady system clock in a temperature range from - 40 to 100℃. Some novel building blocks are developed to save system power consumption,including a zero static current power-on reset circuit and a voltage regulator. The RF/analog front-end circuit is implemented with digital base-band and EEPROM to construct a whole tag chip in 0. 18μm CMOS EEPROM technology without Schottcky diodes. Measured results show that the chip has a minimum supply voltage requirement of 0.75V. At this voltage, the total current consumption of the RF/analog frontend circuit is 4.6μA.展开更多
A new,low-cost RFID tag analog front-end compatible with ISO 14443A and ISO 14443B is presented. By substituting conventional multi-circle antenna with single-circle antenna, the package cost of the tag is greatly red...A new,low-cost RFID tag analog front-end compatible with ISO 14443A and ISO 14443B is presented. By substituting conventional multi-circle antenna with single-circle antenna, the package cost of the tag is greatly reduced. Based on this exasperate antenna performance,a new rectifier with high power conversion efficiency and low turn-on voltage is presented. The circuit is implemented in an SMIC 0.18μm EEPROM process. Measurement results show that with a 120kΩ load,the power conversion efficiency reaches as high as 36%. For a sinusoidal wave with magnitude of 0. 5V, the output DC voltage reaches IV,which is high enough for RFID tags. The read distance is as far as 22cm.展开更多
A low-voltage, low-power, and high-gain rail-to-rail operational amplifier （OpAmp） is presented. The replica-amplifier gain enhancement technique is applied to improve the DC gain of the amplifier, which does not de...A low-voltage, low-power, and high-gain rail-to-rail operational amplifier （OpAmp） is presented. The replica-amplifier gain enhancement technique is applied to improve the DC gain of the amplifier, which does not degrade the output swing and is very suitable for low-voltage applications. In a 0. 18/μm standard CMOS process,a 1V OpAmp with rail-to-rail output is designed. For a load capacitance of 5 pF,simulation by HSPICE shows that this OpAmp achieves an effective open-loop DC gain of 65. 9dB,gain bandwidth of 70.28 MHz,and phase margin of 50 with a quiescent power dissipation of 156.7μW.展开更多
A modified four transistor （4T） self-body-bias structured SRAM/SOI memory cell is proposed. The structure is designed and its parameters are obtained by performance simulation and analysis with TSUPREM4 and MEDICI.T...A modified four transistor （4T） self-body-bias structured SRAM/SOI memory cell is proposed. The structure is designed and its parameters are obtained by performance simulation and analysis with TSUPREM4 and MEDICI.The structure saves area and its process is simplified by using the body resistor with buried p^＋ channel beneath the nMOS gate instead of the pMOS of 6T CMOS SRAM. Furthermore, this structure can operate safely with a 0.5V supply voltage, which may be prevalent in the near future. Finally, compared to conventional 6T CMOS SRAM,this structure＇s transient responses are normal and its power dissipation is 10 times smaller.展开更多
This paper describes the design of a low voltage differential signal （LVDS） transmitter and receiver with high speed and low power for CPU, LCD, FPGA, and other fast links. In the proposed transmitter, a stable refe...This paper describes the design of a low voltage differential signal （LVDS） transmitter and receiver with high speed and low power for CPU, LCD, FPGA, and other fast links. In the proposed transmitter, a stable reference and a common mode feedback circuit are integrated into the LVDS drivers, which enable the transmitter to tolerate variations of process, temperature, and supply voltage. The proposed receiver implements a rail-to-rail amplifier architecture that allows a 1.6Gb/s transmission. The transmitter and receiver are implemented in HJ TC 3.3V,0. 18μm CMOS technology. The experimental results demonstrate that the transmitter and receiver reach 1.6Gb/s. The transmitter and receiver pad cells exhibit a power consumption of 35 and 6mW,respectively.展开更多
文摘A 1.8V 8b 125Msample/s pipelined A/D converter is presented.Power efficiency is optimized by size scaling down scheme using low power single stage cascode amplifier with a gain boosted structure.Global clock tree and local generators are employed to avoid loss and overlap of clock period.The ADC achieves a signal-to-noise-and-distortion ratio (SNDR) of 49.5dB(7.9ENOB) for an input of 62MHz at full speed of 125MHz,consuming only 71mW.It is implemented in 0.18μm CMOS technology with a core area of 0.45mm 2.
文摘This work demonstrates that the ΣΔ modulator with a low oversampling ratio is a viable option for the high-resolution digitization in a low-voltage environment.Low power dissipation is achieved by designing a low-OSR modulator based on differential cascade architecture,while large signal swing maintained to achieve a high dynamic range in the low-voltage environment.Operating from a voltage supply of 1.8V,the sixth-order cascade modulator at a sampling frequency of 4-MHz with an OSR of 24 achieves a dynamic range of 81dB for a 80-kHz test signal,while dissipating only 5mW.
文摘This paper presents a low-voltage low-power variable gain amplifier,which is applied in the automatic gain control loop of a super heterodyne receiver. Six stages are cascaded to provide an 81dB digitally controlled gain range in a 3dB step. The gain step error is less than 0.5dB. It operates at an intermediate frequency of 300kHz, and the power consumption is 1.35mW from a 1.8V supply. The prototype chip is implemented in a TSMC＇s 0.18μm 1P6M CMOS process and occupies approximately 0.24mm^2 . It is very suitable for portable wire- less communication systems. The measurement results agree well with the system requirements.
文摘This paper presents a low voltage, low power RF/analog front-end circuit for passive ultra high frequency （UHF） radio frequency identification （RFID） tags. Temperature compensation is achieved by a reference generator using sub-threshold techniques. The chip maintains a steady system clock in a temperature range from - 40 to 100℃. Some novel building blocks are developed to save system power consumption,including a zero static current power-on reset circuit and a voltage regulator. The RF/analog front-end circuit is implemented with digital base-band and EEPROM to construct a whole tag chip in 0. 18μm CMOS EEPROM technology without Schottcky diodes. Measured results show that the chip has a minimum supply voltage requirement of 0.75V. At this voltage, the total current consumption of the RF/analog frontend circuit is 4.6μA.
文摘A new,low-cost RFID tag analog front-end compatible with ISO 14443A and ISO 14443B is presented. By substituting conventional multi-circle antenna with single-circle antenna, the package cost of the tag is greatly reduced. Based on this exasperate antenna performance,a new rectifier with high power conversion efficiency and low turn-on voltage is presented. The circuit is implemented in an SMIC 0.18μm EEPROM process. Measurement results show that with a 120kΩ load,the power conversion efficiency reaches as high as 36%. For a sinusoidal wave with magnitude of 0. 5V, the output DC voltage reaches IV,which is high enough for RFID tags. The read distance is as far as 22cm.
文摘A low-voltage, low-power, and high-gain rail-to-rail operational amplifier （OpAmp） is presented. The replica-amplifier gain enhancement technique is applied to improve the DC gain of the amplifier, which does not degrade the output swing and is very suitable for low-voltage applications. In a 0. 18/μm standard CMOS process,a 1V OpAmp with rail-to-rail output is designed. For a load capacitance of 5 pF,simulation by HSPICE shows that this OpAmp achieves an effective open-loop DC gain of 65. 9dB,gain bandwidth of 70.28 MHz,and phase margin of 50 with a quiescent power dissipation of 156.7μW.
文摘A modified four transistor （4T） self-body-bias structured SRAM/SOI memory cell is proposed. The structure is designed and its parameters are obtained by performance simulation and analysis with TSUPREM4 and MEDICI.The structure saves area and its process is simplified by using the body resistor with buried p^＋ channel beneath the nMOS gate instead of the pMOS of 6T CMOS SRAM. Furthermore, this structure can operate safely with a 0.5V supply voltage, which may be prevalent in the near future. Finally, compared to conventional 6T CMOS SRAM,this structure＇s transient responses are normal and its power dissipation is 10 times smaller.
文摘This paper describes the design of a low voltage differential signal （LVDS） transmitter and receiver with high speed and low power for CPU, LCD, FPGA, and other fast links. In the proposed transmitter, a stable reference and a common mode feedback circuit are integrated into the LVDS drivers, which enable the transmitter to tolerate variations of process, temperature, and supply voltage. The proposed receiver implements a rail-to-rail amplifier architecture that allows a 1.6Gb/s transmission. The transmitter and receiver are implemented in HJ TC 3.3V,0. 18μm CMOS technology. The experimental results demonstrate that the transmitter and receiver reach 1.6Gb/s. The transmitter and receiver pad cells exhibit a power consumption of 35 and 6mW,respectively.
