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基于CAN总线的智能低压断路器控制器设计 被引量:12
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作者 翟亚芳 张天鹏 +1 位作者 夏路甲 吴战伟 《郑州大学学报(理学版)》 CAS 北大核心 2013年第1期105-109,共5页
介绍了一种基于CAN总线的智能低压断路器控制器的设计.重点介绍了智能控制器的硬件系统构成,包括信号调理电路、CAN总线接口电路和脱扣控制电路,并给出了主程序流程图和通信子程序流程图.通过硬件和软件系统的测试表明,该智能控制器不... 介绍了一种基于CAN总线的智能低压断路器控制器的设计.重点介绍了智能控制器的硬件系统构成,包括信号调理电路、CAN总线接口电路和脱扣控制电路,并给出了主程序流程图和通信子程序流程图.通过硬件和软件系统的测试表明,该智能控制器不仅能够较好地完成过载、短路、失压和欠压等保护功能,而且还可以实现电力参数的测量与显示、故障指示、数据通信等功能. 展开更多
关键词 CAN总线 低压电路器 智能控制 脱扣控制电路
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A Novel Sampling Switch Suitable for Low-Voltage Analog-to-Digital Converters
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作者 彭云峰 周锋 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第8期1367-1372,共6页
A novel, highly linear sampling switch suitable for low-voltage operation is proposed. This switch not only eliminates the nonlinearity introduced by gate-source voltage variation, but also reduces the nonlinearity re... A novel, highly linear sampling switch suitable for low-voltage operation is proposed. This switch not only eliminates the nonlinearity introduced by gate-source voltage variation, but also reduces the nonlinearity resuiting from threshold voltage variation, which has not been accomplished in earlier low-voltage sampling switches. This is achieved by adopting a replica transistor with the same threshold voltage as the sampling transistor. The effectiveness of this technique is demonstrated by a prototype design of a sampling switch in 0. 35μm. The proposed sampling switch achieves a spurious free dynamic range of 111dB for a 0. 2MHz, 1.2Vp-p input signal, sampled at a rate of 2MS/s,about 18dB over the Bootstrapped switch. Also, the on-resistance variation is reduced by 90%. This method is especially useful for low-voltage, high resolution ADCs, which is a hot topic today. 展开更多
关键词 sampling switch NONLINEARITY LOW-VOLTAGE analog-to-digitalconverter switched-capacitor circuits
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Research on the Technology of Low Voltage Intelligent Reactive Compensation
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作者 Yicong Liu 《International Journal of Technology Management》 2014年第1期32-34,共3页
In order to improve the power factor of the circuit, the article takes STM32 as core circuit to development reactive power compensation controller for low voltage intelligent reactive compensation. Circuit can detect ... In order to improve the power factor of the circuit, the article takes STM32 as core circuit to development reactive power compensation controller for low voltage intelligent reactive compensation. Circuit can detect electricity distribution network parameters, and send messages to mobile phone via SMS text messages by TC35 module, remote control compensation capacitor configuration parameters. Circuit with a flexible, reliable, convenient and practical features. This paper analyzes the structure of the controller hardware and software, and describes the hardware schematic circuit diagram and software diagram of the controller. Controller with integrated control, maximize the use of compensating equipment to improve grid power quality. 展开更多
关键词 Reactive power compensation Electrical automation STM32 Intelligent control
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Low leakage 3×VDD-tolerant ESD detection circuit without deep N-well in a standard 90-nm low-voltage CMOS process 被引量:3
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作者 YANG ZhaoNian LIU HongXia WANG ShuLong 《Science China(Technological Sciences)》 SCIE EI CAS 2013年第8期2046-2051,共6页
A new low leakage 3×VDD-tolerant electrostatic discharge(ESD)detection circuit using only low-voltage device without deep N-well is proposed in a standard 90-nm 1.2-V CMOS process.Stacked-transistors technique is... A new low leakage 3×VDD-tolerant electrostatic discharge(ESD)detection circuit using only low-voltage device without deep N-well is proposed in a standard 90-nm 1.2-V CMOS process.Stacked-transistors technique is adopted to sustain high-voltage stress and reduce leakage current.No NMOSFET operates in high voltage range and it is unnecessary to use any deep N-well.The proposed detection circuit can generate a 38 mA current to turn on the substrate triggered silicon-controlled rectifier(STSCR)under the ESD stress.Under normal operating conditions,all the devices are free from over-stress voltage threat.The leakage current is 88 nA under 3×VDD bias at 25°C.The simulation result shows the circuit can be successfully used for 3×VDD-tolerant I/O buffer. 展开更多
关键词 detection circuit electrostatic discharge(ESD) leakage current over-stress voltage stacked-transistors
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