A novel, highly linear sampling switch suitable for low-voltage operation is proposed. This switch not only eliminates the nonlinearity introduced by gate-source voltage variation, but also reduces the nonlinearity re...A novel, highly linear sampling switch suitable for low-voltage operation is proposed. This switch not only eliminates the nonlinearity introduced by gate-source voltage variation, but also reduces the nonlinearity resuiting from threshold voltage variation, which has not been accomplished in earlier low-voltage sampling switches. This is achieved by adopting a replica transistor with the same threshold voltage as the sampling transistor. The effectiveness of this technique is demonstrated by a prototype design of a sampling switch in 0. 35μm. The proposed sampling switch achieves a spurious free dynamic range of 111dB for a 0. 2MHz, 1.2Vp-p input signal, sampled at a rate of 2MS/s,about 18dB over the Bootstrapped switch. Also, the on-resistance variation is reduced by 90%. This method is especially useful for low-voltage, high resolution ADCs, which is a hot topic today.展开更多
A kind of structure and a design method using transmission voltage-switch theory for pulse-triggered flip-flops were proposed,which are suitable for all kinds of pulse-triggered flip-flops and no extra techniques are ...A kind of structure and a design method using transmission voltage-switch theory for pulse-triggered flip-flops were proposed,which are suitable for all kinds of pulse-triggered flip-flops and no extra techniques are needed to eliminate the switching activities of internal nodes.Based on the proposed structure and design technique,two pulsed flip-flops were implemented and simulated.The proposed pulsed flip-flops have simple circuit structures.HSPICE simulation shows that the proposed pulsed D flip-flop outperforms the conventional pulsed D flip-flop by 17.2% in delay and 30.1% in power-delay-product(PDP) and the proposed pulsed JK flip-flop has low power and small PDP compared with pulsed D pulsed flip-flops,confirming that the proposed structure and design technique are simple and practical.展开更多
By using poled-polymer/silicon slot waveguides in the active region and the Pockels effect of the poled-polymer,we propose a kind of Mach-Zehnder interferometer(MZI) electro-optic(EO) switch operated at 1 550 nm.Struc...By using poled-polymer/silicon slot waveguides in the active region and the Pockels effect of the poled-polymer,we propose a kind of Mach-Zehnder interferometer(MZI) electro-optic(EO) switch operated at 1 550 nm.Structural parameters are optimized for realizing normal switching function.Dependencies of switching characteristics on the slot waveguide parameters are investigated.For the silicon strip with dimension of 170 nm×300 nm,as the slot width varies from 50 nm to 100 nm,the switching voltage can be as low as 1.0 V with active region length of only 0.17–0.35 mm,and the length of the whole device is only about 770–950 μm.The voltage-length product of this switching structure is only 0.17–0.35 V·mm,and it is at least 19–40 times smaller than that of the traditional polymer MZI EO switch,which is 6.69 V·mm.Compared with our previously reported MZI EO switches,this switch exhibits some superior characteristics,including low switching voltage,compact device size and small wavelength dependency.展开更多
文摘A novel, highly linear sampling switch suitable for low-voltage operation is proposed. This switch not only eliminates the nonlinearity introduced by gate-source voltage variation, but also reduces the nonlinearity resuiting from threshold voltage variation, which has not been accomplished in earlier low-voltage sampling switches. This is achieved by adopting a replica transistor with the same threshold voltage as the sampling transistor. The effectiveness of this technique is demonstrated by a prototype design of a sampling switch in 0. 35μm. The proposed sampling switch achieves a spurious free dynamic range of 111dB for a 0. 2MHz, 1.2Vp-p input signal, sampled at a rate of 2MS/s,about 18dB over the Bootstrapped switch. Also, the on-resistance variation is reduced by 90%. This method is especially useful for low-voltage, high resolution ADCs, which is a hot topic today.
基金Project(60503027) supported by the National Natural Science Foundation of China
文摘A kind of structure and a design method using transmission voltage-switch theory for pulse-triggered flip-flops were proposed,which are suitable for all kinds of pulse-triggered flip-flops and no extra techniques are needed to eliminate the switching activities of internal nodes.Based on the proposed structure and design technique,two pulsed flip-flops were implemented and simulated.The proposed pulsed flip-flops have simple circuit structures.HSPICE simulation shows that the proposed pulsed D flip-flop outperforms the conventional pulsed D flip-flop by 17.2% in delay and 30.1% in power-delay-product(PDP) and the proposed pulsed JK flip-flop has low power and small PDP compared with pulsed D pulsed flip-flops,confirming that the proposed structure and design technique are simple and practical.
基金supported by the National Natural Science Foundation of China(Nos.61107021,61177027 and 61077074)the Ministry of Education of China(Nos.20110061120052 and 20120061130008)the Science and Technology Department of Jilin Province of China(No.20130522161JH)
文摘By using poled-polymer/silicon slot waveguides in the active region and the Pockels effect of the poled-polymer,we propose a kind of Mach-Zehnder interferometer(MZI) electro-optic(EO) switch operated at 1 550 nm.Structural parameters are optimized for realizing normal switching function.Dependencies of switching characteristics on the slot waveguide parameters are investigated.For the silicon strip with dimension of 170 nm×300 nm,as the slot width varies from 50 nm to 100 nm,the switching voltage can be as low as 1.0 V with active region length of only 0.17–0.35 mm,and the length of the whole device is only about 770–950 μm.The voltage-length product of this switching structure is only 0.17–0.35 V·mm,and it is at least 19–40 times smaller than that of the traditional polymer MZI EO switch,which is 6.69 V·mm.Compared with our previously reported MZI EO switches,this switch exhibits some superior characteristics,including low switching voltage,compact device size and small wavelength dependency.
