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CVD法制备高纯钛过程中杂质铁的行为研究
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作者 李纪伟 陈肖虎 +2 位作者 王睿 李名新 王帅帅 《稀有金属与硬质合金》 CAS CSCD 北大核心 2015年第3期29-32,共4页
研究了CVD法制备高纯钛过程中杂质铁的行为;通过对卤化亚铁的相关热力学计算,分析了卤化亚铁的合成与分解条件。研究结果表明,最佳卤化温度为800~1 000K,最佳裂解沉积温度为1 400~1 650K,在此温度范围内,不仅可高效生产高纯钛,还可有效... 研究了CVD法制备高纯钛过程中杂质铁的行为;通过对卤化亚铁的相关热力学计算,分析了卤化亚铁的合成与分解条件。研究结果表明,最佳卤化温度为800~1 000K,最佳裂解沉积温度为1 400~1 650K,在此温度范围内,不仅可高效生产高纯钛,还可有效抑制杂质铁带来的二次污染。 展开更多
关键词 高纯钛 杂质铁 CVD法 低温卤化 高温沉积 热力学
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Organolead trihalide perovskite materials for efficient light emitting diodes 被引量:1
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作者 Ming Peng Wen Wen +8 位作者 Si Chen Buxin Chen Kai Yan Hsienwei Hu Bin Dong Xue Gao Xiao Yu Xiaoming Jiang Dechun Zou 《Science China Chemistry》 SCIE EI CAS CSCD 2016年第6期653-658,共6页
Organolead trihalide perovskite materials have been attracting increasing attention due to their promising role in solid solar cells. Several advantages make them potential candidates for optoelectronics:(1) solution-... Organolead trihalide perovskite materials have been attracting increasing attention due to their promising role in solid solar cells. Several advantages make them potential candidates for optoelectronics:(1) solution- or/and vapor-processed preparation at low temperature;(2) tunable optical bandgap, wide absorption spectrum but narrow photoluminescence peaks;(3) long car-rier life time, large diffusion length and high charge mobility;(4) various nanostructures via tuning capping agents and sol-vents. In this review, we summarize recent attempts toward efficient LEDs based on organolead trihalide perovskite materials. The strategies of materials science, device design and interface engineering are highlighted. Recent development and future perspectives are summarized for practical perovskite light technologies. 展开更多
关键词 organolead trihalide perovskite materials interface engineering light emitting diodes
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