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用硅烷和氮混合物的低温等离子体沉积氮化硅薄膜
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作者 文允鉴 《等离子体应用技术快报》 2000年第5期4-6,共3页
关键词 硫烷 混合物 低温等离子体沉积 氮化硅薄膜
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SiN_(x)介质薄膜制备及其对GaN表面金刚石形核生长的影响 被引量:1
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作者 刘思彤 张钦睿 +5 位作者 郑宇亭 郝志恒 刘金龙 陈良贤 魏俊俊 李成明 《真空与低温》 2023年第1期12-19,共8页
SiN_(x)作为GaN和金刚石异质结构的中间层,不仅是下层GaN材料的保护层,也是上层金刚石的形核生长层,因此SiN_(x)介质薄膜对于GaN表面合成高质量金刚石具有重要的意义。研究分别采用低压化学气相沉积(LPCVD)和磁控溅射(MS)方法在GaN-Si... SiN_(x)作为GaN和金刚石异质结构的中间层,不仅是下层GaN材料的保护层,也是上层金刚石的形核生长层,因此SiN_(x)介质薄膜对于GaN表面合成高质量金刚石具有重要的意义。研究分别采用低压化学气相沉积(LPCVD)和磁控溅射(MS)方法在GaN-Si衬底上制备SiN_(x)介质薄膜。利用扫描电镜、傅立叶红光光谱、X射线衍射、激光拉曼等技术对SiN_(x)薄膜的表面形貌、晶体结构和表面官能团等进行分析。结果表明,采用LPCVD镀制的非晶态SiN_(x)介质薄膜经籽晶播种、形核生长金刚石后,金刚石/SiN_(x)/GaN界面完整致密;采用MS制备的SiN_(x)介质薄膜呈晶态特征,对应的界面出现明显的刻蚀坑。沉积方式会影响SiN_(x)薄膜的晶体结构和微观形貌,高致密度的非晶态结构有利于金刚石层快速形核生长,对于构建金刚石基GaN结构更为有利。 展开更多
关键词 磁控溅射 低温等离子体化学气相沉积 氮化硅 介质钝化薄膜 金刚石形核
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Low Temperature Plasma CVD Grown Graphene by Microwave Surface-Wave Plasma CVD Using Camphor Precursor 被引量:1
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作者 Hideo Uchida Hare Ram Aryal +1 位作者 Sudip Adhikari Masayoshi Umeno 《Journal of Physical Science and Application》 2016年第2期34-38,共5页
Hydrocarbon precursor such as methane has been widely used to grow graphene films and the methods of growing quality graphene films are dominated by thermal CVD (chemical vapor deposition) system. Graphene films gro... Hydrocarbon precursor such as methane has been widely used to grow graphene films and the methods of growing quality graphene films are dominated by thermal CVD (chemical vapor deposition) system. Graphene films grown by plasma process are generally highly defective which in turns degrade the quality of the films. Here, using a green precursor, camphor we demonstrate a simple and economical method to get high-quality graphene film on copper substrate by micro wave surface-wave plasma CVD at relatively low temperature 550℃. Graphene film grown using camphor shows superior quality than that of the film grown using methane. Results revealed that camphor precursor is a good alternative to hydrocarbon precursors for graphene research. 展开更多
关键词 CAMPHOR plasma CVD quality graphene plasma induced defects.
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