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铁电体中偶极子的滞后对剩余极化的影响 被引量:10
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作者 曹万强 刘培朝 +2 位作者 陈勇 潘瑞琨 祁亚军 《物理学报》 SCIE EI CAS CSCD 北大核心 2016年第13期256-262,共7页
铁电体的剩余极化强度随温度降低而下降的特性引起了人们对铁电体存储数据失效的担心.运用铁电体的唯象理论和偶极子对交变电场的响应,提出了在电滞回线测量中偶极子的滞后冷冻效应模型,对极化的低温退化现象做了合理解释:温度下降导致... 铁电体的剩余极化强度随温度降低而下降的特性引起了人们对铁电体存储数据失效的担心.运用铁电体的唯象理论和偶极子对交变电场的响应,提出了在电滞回线测量中偶极子的滞后冷冻效应模型,对极化的低温退化现象做了合理解释:温度下降导致吉布斯自由能势垒增大,致使偶极子对交变电场的响应时间延长.引入响应的滞后因子发现,极化强度随温度降低会出现峰值,在低温下降直至为零,可用偶极子的滞后与冻结效应描述.详细研究结果表明:因材料组份变化导致热力学参量的变化是重要因素:铁电-顺电相变中软模系数的增大会导致剩余极化峰移向高温;铁电性的增强,温度极化系数的增大和耐压强度或饱和电场的增强均会抑制滞后效应,从而使低温滞后效应移向低温.运用导出的公式数值模拟Ba Ti O_3/Bi Sc O_3复合陶瓷剩余极化强度的实验结果发现,Bi Sc O3含量的增加,使居里温度略有减小,但导致了软模系数较大幅度的增加,其结果是使偶极子的滞后效应发生在较高的温度.软模系数与铁电体的极化特性、铁电性、介电性和力学性均密切相关.研究结论表明:在低温下铁电体的铁电性没有失效,偶极子的低温冻结效应更有利于铁电体长久地保存数据. 展开更多
关键词 铁电 极化强度 低温退化
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Softening interstage annealing of austenitic stainless steel sheets for stamping processes
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作者 韩飞 林高用 +3 位作者 胡猛 王世鹏 彭大暑 周青 《Journal of Central South University》 SCIE EI CAS 2012年第6期1508-1516,共9页
To study the mechanics of work-hardening and annealing-softening, a series of experiments were conducted on samples of 304 austenitic stainless steel sheets. In addition, transmission electron microscopy (TEM), scan... To study the mechanics of work-hardening and annealing-softening, a series of experiments were conducted on samples of 304 austenitic stainless steel sheets. In addition, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and tensile testing were carried out to study changes and mechanisms of the stainless steel structures and properties during work-hardening and annealing-softening. The results indicate that annealing at low temperatures (100-500 ~C) can only remove partial residual stresses in the sample and the softening via annealing is not obvious. Bright annealing and rapid cooling in a protective atmosphere can completely soften the cold-worked material. In addition, the low-temperature sample without a protective atmosphere only has a little oxidation on the surface, but at higher temperature the oxidized layer is very thick. Thus, high-temperature annealing should include bright annealing. 展开更多
关键词 304 austenitic stainless steel work hardening annealing softening deformation twinning strain-induced martensite
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Efficient and stable all-inorganic Sb_(2)(S,Se)_(3)solar cells via manipulating energy levels in MnS hole transporting layers 被引量:1
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作者 Shaoying Wang Yuqi Zhao +5 位作者 Liquan Yao Chuang Li Junbo Gong Guilin Chen Jianmin Li Xudong Xiao 《Science Bulletin》 SCIE EI CSCD 2022年第3期263-269,共7页
The use of organic hole transport layer(HTL)Spiro-OMeTAD in various solar cells imposes serious stabil-ity and cost problems,and thus calls for inorganic substitute materials.In this work,a novel inorganic MnS film pr... The use of organic hole transport layer(HTL)Spiro-OMeTAD in various solar cells imposes serious stabil-ity and cost problems,and thus calls for inorganic substitute materials.In this work,a novel inorganic MnS film prepared by thermal evaporation has been demonstrated to serve as a decent HTL in high-performance Sb_(2)(S,Se)_(3)solar cells,providing a cost-effective all-inorganic solution.A low-temperature air-annealing process for the evaporated MnS layer was found to result in a significant positive effect on the power conversion efficiency(PCE)of Sb_(2)(S,Se)_(3)solar cells,due to its better-matched energy band alignment after partial oxidation.Impressively,the device with the optimized MnS HTL has achieved an excellent PCE of about 9.24%,which is the highest efficiency among all-inorganic Sb_(2)(S,Se)_(3)solar cells.Our result has revealed that MnS is a feasible substitute for organic HTL in Sb-based solar cells to achieve high PCE,low cost,and high stability. 展开更多
关键词 Sb^(2)(S Se)_(3) All-inorganic Solar cells MNS Hole transporting layer
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Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing 被引量:5
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作者 YANG AiLing YANG Yun +4 位作者 ZHANG ZhenZhen BAO XiChang YANG RenQiang LI ShunPin SUN Liang 《Science China(Technological Sciences)》 SCIE EI CAS 2013年第1期25-31,共7页
Nano-ZnO thin films composed of nanoparticles with sizes of 10-16 nm on silicon substrates at low temperature were prepared by sol-gel method.By placing the nano-ZnO thin films at room temperature or annealing at 100&... Nano-ZnO thin films composed of nanoparticles with sizes of 10-16 nm on silicon substrates at low temperature were prepared by sol-gel method.By placing the nano-ZnO thin films at room temperature or annealing at 100°C in air for 10 h intermittently,within a total 70 h annealing time,the evolution of PL spectra of the nano-ZnO thin films were studied in detail.As the annealing time increases,the PL peaks shift from violet to blue and green bands.The PL peaks at violet and blue bands decrease with the annealing time,but the PL peaks at green band are opposite.The PL spectra are related to the defects in the nano-ZnO thin films.The PL peaks positioned at 430 nm are mainly related to defects of zinc interstatials(Zni),oxygen vacancies and(Vo);the ones at 420 nm to oxygen interstitials(Oi),Zinc vacancies(Vzn),Zni ;and the ones at 468 nm to Vzn,Zni,and charged oxygen interstatials(Vo+).The green luminescence is related to Oi,Vo and Zni.The evolutions of PL spectra and the defects are also related to the concentrations of Zn in the thin films,the thicknesses of the films and the annealing time.For the films with 0.5 M and 1.0 M Zn concentrations,after 20 h and 30 h annealing in air at 100°C,respectively,either placing them in air at room temperature or continuing anneal in air at 100°C,the PL spectra are stable.Under the low temperature annealing,Zni decreases with the annealing time,and Oi increases.Sufficient Oi favors to keep the nano-ZnO thin films stable.This result is important to nano-ZnO thin films as electron transport layers in inverted or tandem organic solar cells. 展开更多
关键词 nano-ZnO thin films low temperature annealing PL spectra DEFECTS
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