A new detection method has been applied to study the penetration depth of low-energy heavy ions in botanic samples. Highly oriented pyrolytic graphite (HOPG) pieces were placed behind the target samples with certain t...A new detection method has been applied to study the penetration depth of low-energy heavy ions in botanic samples. Highly oriented pyrolytic graphite (HOPG) pieces were placed behind the target samples with certain thickness to receive energetic penetrated ions during the irradiation. After irradiation, statistic number density of protrusion-like damage induced by energetic penetrated ions can be ob- tained through scanning tunneling microscope (STM) observation on the surfaces of HOPG. The results of test indicate that the detection limit can be as low as 1.0×109 protrusions/cm2. With the method, the penetration depth of at least 60μm can be detected in kidney bean slices irradiated by N+ ions with dose of 0.3-3×1017ions/cm2.展开更多
Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices. Ion implantation/irradiation was proved to be an effectiv...Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices. Ion implantation/irradiation was proved to be an effective method to modify the physical properties of the material. In the present work, we studied the dependence of damage accumulation on irradiation dose and temperature and the corresponding effects on photolumines cence character of the material. Specimens of GaN (n-type doping, (0001) on axis) were irradiated with展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.19675004 and (No.19890300)
文摘A new detection method has been applied to study the penetration depth of low-energy heavy ions in botanic samples. Highly oriented pyrolytic graphite (HOPG) pieces were placed behind the target samples with certain thickness to receive energetic penetrated ions during the irradiation. After irradiation, statistic number density of protrusion-like damage induced by energetic penetrated ions can be ob- tained through scanning tunneling microscope (STM) observation on the surfaces of HOPG. The results of test indicate that the detection limit can be as low as 1.0×109 protrusions/cm2. With the method, the penetration depth of at least 60μm can be detected in kidney bean slices irradiated by N+ ions with dose of 0.3-3×1017ions/cm2.
文摘Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices. Ion implantation/irradiation was proved to be an effective method to modify the physical properties of the material. In the present work, we studied the dependence of damage accumulation on irradiation dose and temperature and the corresponding effects on photolumines cence character of the material. Specimens of GaN (n-type doping, (0001) on axis) were irradiated with
