High levels of low molecular weight (LMW) IgM in certain diseases are associated with clinical and laboratory indices which reflect the severity of the disease. These associations suggest that LMW IgM may play an impo...High levels of low molecular weight (LMW) IgM in certain diseases are associated with clinical and laboratory indices which reflect the severity of the disease. These associations suggest that LMW IgM may play an important role in the immunopathogenesis of these diseases. To further approach the question concerning the functional activity of LMW IgM in disease, a panel of LMW IgM and high molecular weight (HMW) IgM preparations with or without rheumatoid factor (RF) activity were used to investigate their antibody binding activity and their effector function. It was found that LMW IgM-RF and HMW IgM-RF had a similar binding capacity to Fc fragment as there was no significant difference in the affinity index between them. It further showed that the rate of activation and total amount of utilization of complement by LMW IgM and HMW IgM was similar, although the mean fluorescence of C3 deposition by IgM-RF and HMW IgM-RF was slightly higher than that of LMW IgM-RF and other control RF antibodies. However, the current study demonstrated that LMW IgM had strong neutrophil activating properties when compared with HMW IgM. These findings suggest that one mechanism of LMW IgM contributing to the immunopathogenesis of RA may be due to the formation of circulating immune complex ( CIC) by LMW IgM with subsequent activation of neutrophils. Whether LMW IgM has other functional activity in disease is unclear and needs further investigation.展开更多
Monte Carlo simulation results are reported on the single event upset(SEU) triggered by the direct ionization effect of low-energy proton. The SEU cross-sections on the 45 nm static random access memory(SRAM) were com...Monte Carlo simulation results are reported on the single event upset(SEU) triggered by the direct ionization effect of low-energy proton. The SEU cross-sections on the 45 nm static random access memory(SRAM) were compared with previous research work, which not only validated the simulation approach used herein, but also exposed the existence of saturated cross-section and the multiple bit upsets(MBUs) when the incident energy was less than 1 MeV. Additionally, it was observed that the saturated cross-section and MBUs are involved with energy loss and critical charge. The amount of deposited charge and the distribution with respect to the critical charge as the supplemental evidence are discussed.展开更多
文摘High levels of low molecular weight (LMW) IgM in certain diseases are associated with clinical and laboratory indices which reflect the severity of the disease. These associations suggest that LMW IgM may play an important role in the immunopathogenesis of these diseases. To further approach the question concerning the functional activity of LMW IgM in disease, a panel of LMW IgM and high molecular weight (HMW) IgM preparations with or without rheumatoid factor (RF) activity were used to investigate their antibody binding activity and their effector function. It was found that LMW IgM-RF and HMW IgM-RF had a similar binding capacity to Fc fragment as there was no significant difference in the affinity index between them. It further showed that the rate of activation and total amount of utilization of complement by LMW IgM and HMW IgM was similar, although the mean fluorescence of C3 deposition by IgM-RF and HMW IgM-RF was slightly higher than that of LMW IgM-RF and other control RF antibodies. However, the current study demonstrated that LMW IgM had strong neutrophil activating properties when compared with HMW IgM. These findings suggest that one mechanism of LMW IgM contributing to the immunopathogenesis of RA may be due to the formation of circulating immune complex ( CIC) by LMW IgM with subsequent activation of neutrophils. Whether LMW IgM has other functional activity in disease is unclear and needs further investigation.
基金supported by the National Natural Science Foundation of China(Grant Nos.11179003,10975164,10805062 and 11005134)
文摘Monte Carlo simulation results are reported on the single event upset(SEU) triggered by the direct ionization effect of low-energy proton. The SEU cross-sections on the 45 nm static random access memory(SRAM) were compared with previous research work, which not only validated the simulation approach used herein, but also exposed the existence of saturated cross-section and the multiple bit upsets(MBUs) when the incident energy was less than 1 MeV. Additionally, it was observed that the saturated cross-section and MBUs are involved with energy loss and critical charge. The amount of deposited charge and the distribution with respect to the critical charge as the supplemental evidence are discussed.
