电子管3C33为美国生产的工业控制用大功率低μ双三极管,用其制作音响功放也较为适合。根据其 Ua～Ia 特性曲线族,由此计算出的 A 类和 ABI 类功率放大参数如附表所示。由附表中的数据可知,3C33作 A 类和 ABI 类放大时,其性能接近2A3型...电子管3C33为美国生产的工业控制用大功率低μ双三极管,用其制作音响功放也较为适合。根据其 Ua～Ia 特性曲线族,由此计算出的 A 类和 ABI 类功率放大参数如附表所示。由附表中的数据可知,3C33作 A 类和 ABI 类放大时,其性能接近2A3型管。由于3C33的μ值比2A3大,所以灵敏度相对较高,若输出同样的3.5W 功率,3C33只需16Vp-p 的驱动电压。展开更多
A new frequency compensation technique for low-power, area-efficient multistage amplifiers is introduced. Using nested active capacitors, our scheme achieves better bandwidth-to-power and slew-rate-to-power performanc...A new frequency compensation technique for low-power, area-efficient multistage amplifiers is introduced. Using nested active capacitors, our scheme achieves better bandwidth-to-power and slew-rate-to-power performances than previous works. Implemented in standard 0.35μm CMOS technology, our three-stage amplifier achieves 105dB DC gain, 3.3M GBW,68 phase margin, and 2.56V/μs average slew rate under a 150pF capacitive load. All of these are realized with only 40μW power consumption under a 2V power supply,with very small compensation capacitors.展开更多
文摘电子管3C33为美国生产的工业控制用大功率低μ双三极管,用其制作音响功放也较为适合。根据其 Ua～Ia 特性曲线族,由此计算出的 A 类和 ABI 类功率放大参数如附表所示。由附表中的数据可知,3C33作 A 类和 ABI 类放大时,其性能接近2A3型管。由于3C33的μ值比2A3大,所以灵敏度相对较高,若输出同样的3.5W 功率,3C33只需16Vp-p 的驱动电压。
文摘A new frequency compensation technique for low-power, area-efficient multistage amplifiers is introduced. Using nested active capacitors, our scheme achieves better bandwidth-to-power and slew-rate-to-power performances than previous works. Implemented in standard 0.35μm CMOS technology, our three-stage amplifier achieves 105dB DC gain, 3.3M GBW,68 phase margin, and 2.56V/μs average slew rate under a 150pF capacitive load. All of these are realized with only 40μW power consumption under a 2V power supply,with very small compensation capacitors.
