In open normative multi-agent communities,an agent is not usually and explicitly given the norms of the host agents.Thus,when it is not able to adapt the communities's norms,it is totally deprived of accessing res...In open normative multi-agent communities,an agent is not usually and explicitly given the norms of the host agents.Thus,when it is not able to adapt the communities's norms,it is totally deprived of accessing resources and services from the host.Such circumstance severely affects its performance resulting in failure to achieve its goal.Consequently,this study attempts to overcome this deficiency by proposing a technique that enables an agent to detect the host's potential norms via self-enforcement and update its norms even in the absence of sanctions from a third-party.The authors called this technique as the potential norms detection technique(PNDT).The PNDT consists of five components: Agent's belief base; observation process; potential norms mining algorithm(PNMA);verification process; and updating process.The authors demonstrate the operation of the PNMA algorithm by testing it on a typical scenario and analyzing the results on several perspectives.The tests' results show that the PNDT performs satisfactorily albeit the success rate depends on the environment variables settings.展开更多
Using two-step growth method and buffer layer annealing treatment,the double heterojunction structures of In_(0.82)Ga_(0.18) As epilayer capped with In As_(0.6)P0.4 layer were prepared on In P substrate by low pressur...Using two-step growth method and buffer layer annealing treatment,the double heterojunction structures of In_(0.82)Ga_(0.18) As epilayer capped with In As_(0.6)P0.4 layer were prepared on In P substrate by low pressure metal organic chemical vapor deposition(LP-MOCVD).Based on the high quality In_(0.82)Ga_(0.18) As structures,the In_(0.82)Ga_(0.18) As PIN photodetector with cut-off wavelength of 2.56 μm at room temperature was fabricated by planar semiconductor technology,and the device performance was investigated in detail.The typical dark current at the reverse bias VR=10 m V and the resistance area product R0 A are 5.02 μA and 0.29 ?·cm2 at 296 K and 5.98 n A and 405.2 ?·cm2 at 116 K,respectively.The calculated peak detectivities of the In_(0.82)Ga_(0.18) As photodetector are 1.21×1010 cm·Hz1/2/W at 296 K and 4.39×1011 cm·Hz1/2/W at 116 K respectively,where the quantum efficiency η=0.7 at peak wavelength is supposed.The results show that the detection performance of In_(0.82)Ga_(0.18) As prepared by two-step growth method can be improved greatly.展开更多
文摘In open normative multi-agent communities,an agent is not usually and explicitly given the norms of the host agents.Thus,when it is not able to adapt the communities's norms,it is totally deprived of accessing resources and services from the host.Such circumstance severely affects its performance resulting in failure to achieve its goal.Consequently,this study attempts to overcome this deficiency by proposing a technique that enables an agent to detect the host's potential norms via self-enforcement and update its norms even in the absence of sanctions from a third-party.The authors called this technique as the potential norms detection technique(PNDT).The PNDT consists of five components: Agent's belief base; observation process; potential norms mining algorithm(PNMA);verification process; and updating process.The authors demonstrate the operation of the PNMA algorithm by testing it on a typical scenario and analyzing the results on several perspectives.The tests' results show that the PNDT performs satisfactorily albeit the success rate depends on the environment variables settings.
基金supported by the National Natural Science Foundation of China(Nos.11174224 and 11404246)the Natural Science Foundation of Shandong Province(Nos.BS2015DX015 and ZR2013FM001)+1 种基金the Science and Technology Development Program of Shandong Province(No.2013YD01016)the Higher School Science and Technology Program of Shandong Province(Nos.J13LJ54 and J15LJ54)
文摘Using two-step growth method and buffer layer annealing treatment,the double heterojunction structures of In_(0.82)Ga_(0.18) As epilayer capped with In As_(0.6)P0.4 layer were prepared on In P substrate by low pressure metal organic chemical vapor deposition(LP-MOCVD).Based on the high quality In_(0.82)Ga_(0.18) As structures,the In_(0.82)Ga_(0.18) As PIN photodetector with cut-off wavelength of 2.56 μm at room temperature was fabricated by planar semiconductor technology,and the device performance was investigated in detail.The typical dark current at the reverse bias VR=10 m V and the resistance area product R0 A are 5.02 μA and 0.29 ?·cm2 at 296 K and 5.98 n A and 405.2 ?·cm2 at 116 K,respectively.The calculated peak detectivities of the In_(0.82)Ga_(0.18) As photodetector are 1.21×1010 cm·Hz1/2/W at 296 K and 4.39×1011 cm·Hz1/2/W at 116 K respectively,where the quantum efficiency η=0.7 at peak wavelength is supposed.The results show that the detection performance of In_(0.82)Ga_(0.18) As prepared by two-step growth method can be improved greatly.
